2N5771 Search Results

2N5771

Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

2N577

Abstract: 2N5771 PN4258 CBVK741B019 F63TNR MMBT5771 PN2222N Transistor 2N5771
Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

MC 140 transistor

Abstract: 2N5771
Contextual Info: 2N5771 I MMBT5771 Discrete POWER & Signal Technologies National Se m iconducto r" MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e ry high s p e e d satu ra te sw itching at c o lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e

Contextual Info: LJ na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2N5771 PN5910 U.S.A. JEDEC TO-92 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5910 JEDEC TO-106 PNP SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR CENTRAL SEMICONDUCTOR c e n tr iti S@iîîi6@fi€§ü6f0r corgs. eenfru! Sifnieonduetor Corp. Central semiconductor Corp. centrai Semiconductor Corp. 92D 00354 D D E l n m ^ dddd 3 S 4 3‘ T 2N5771 PN5910 2N5910 JEDEC T0-92

2N5771

Abstract: MMBT5771 PN4258
Contextual Info: ssæ i v i ra o „ „ r:^ o « 2N5771 MMBT5771 S O T -2 3 B M a rk : 3 R PNP Switching Transistor T h is d e v ic e is d e s ig n e d for v e ry high s p e e d s a tu ra te s w itc h in g at c o lle c to r c u rre n ts to 1 0 0 m A . S o u rc e d from P ro c e s s 6 5 . S e e

2N5771

Abstract: MMBT5771 PN4258
Contextual Info: 2N5771 MMBT5771 SOT-23 B Mark: 3R PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e ry high s p e e d s a tu ra te s w itc h in g at c o lle c to r c u rre n ts to 1 0 0 m A . S o u rc e d from P ro c e s s 6 5 . S e e P N 4 2 5 8 fo r c h a ra c te ristics .

2N5771

Abstract: PN4258 CBVK741B019 F63TNR MMBT5771 PN2222N
Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

2n5771

Abstract: 5B550 2N5910 PN5910 Transistor 2N5771
Contextual Info: Datasheet 2N5771 PN5910 C a | « Go n l 1 «tr 1 U l Sem iconductor Corp. 2N5910 JEDEC T 0 -9 2 JEDEC T 0 -1 0 6 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP SILICON SWITCH NG TRANSISTORS Manufacturers of World Class Discrete Semiconductors

2N5831

Abstract: 2n5962 2N5769 2N5771 2N5830 FTS05771 2N5833 2N5772 2N596 2n5961
Contextual Info: FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD A4 84D SEMICONDUCTOR • 27618 T D PNP Ultra High Speed Saturated Logic Switch A Schlum berger Com pany • B4t. =11=74 0 0 2 7 b i a 2N5771/FTS05771 r FAIRCHILD • • Y eJ PACK AGE 2N5771 FT S05 771 V c e o • • •15 V Min

PN3640

Abstract: 2N5771 PN4258 ST5771-1 TN3467A
Contextual Info: This PNP Transistors T Material Ln □ b-1 t- 1 UJ □ Copyrighted □ a -c □ -C tr & Semiconductor" V Device No. Case Style 2N5771 By ru PN3640 Its PN4258 Respective io ro ST5771-1 CBO V CEO V EBO (V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92)

Contextual Info: ^Ss-mi-donaudtoi U^ioaucti, Due. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5771/FTSO5771 PNP Ultra High Speed Saturated Logic Switch PACKAGE 2N5771 FTSO5771 • VCEO . 15 V (Mln) • ton . 15 ns (Max) @ 10 mA, ton .20 ns (Max) @ 10 mA

2N5771

Contextual Info: 2N5771 PNP Ultra High Speed Saturated Logic Switch. 0.98 Transistors. 1 of 1 Home Part Number: 2N5771 Online Store 2N5771 Diodes PNP Ult ra High Speed Saturat ed Lo gic Sw it ch. Transistors Enter code INTER3 at

2N5771

Abstract: Transistor 2N5771 2N6427 MMBT5771 MMBT6427 MPSA14 PN4258
Contextual Info: 2N5771 MMBT5771 C E C TO-92 BE SOT-23 B Mark: 3R PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol

2N5771

Abstract: 2N5771/MMBT5771
Contextual Info: 2N5771/MMBT5771 National ÆjA Semiconductor MMBT5771 2N5771 U TO - 236 S O T -23 TO-92 Ea f T l/G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP Switching Transistor Electrical Characteristics t a = 25”c unless otherwise noted Parameter Min V(BR)CEO Collector-Emitter Breakdown Voltage

PN4258

Abstract: 2N5771 MMBT5771
Contextual Info: 2N5771 I MMBT5771 & Discrete P O W E R & S ig n a l Technologies _ National S e m i c o n d u c to r” MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e r y h ig h s p e e d s a tu ra te sw itc h in g at c o lle c t o r c u r r e n ts to 1 0 0 m A . S o u r c e d fro m P r o c e s s 6 5 . S e e

Contextual Info: j£r: v p?5? s,: 2N5771 MMBT5771 Mark: 3R PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

Contextual Info: 2N5771 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)8.0

NS3762

Abstract: PN4258
Contextual Info: {DISCRETE} £> 3 2 CM CO CM CM in to ICO 100 100 90 co o CO 20 20 10 o o o § 300 250 0 ID CO CO CO 25 o 30 o o CO > o o • »J o c 1- 40Ö , o o s t i l l 0 ■> U3 c ▼* <0 (£> - 5 O S- O C PJ ! S CO 3 0 c T- O * if > in CM 0 I o r - Ci o c 00 r- id

LT1220

Contextual Info: LTC1282 3V 140ksps 12-Bit Sampling A/D Converter with Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Single Supply 3V or ±3V Operation 140ksps Throughput Rate 12mW Typ Power Dissipation On-Chip 25ppm/°C Reference Internal Synchronized Clock; No Clock Required

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt