MMBT5771 Search Results

2N5771

Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

2N577

Abstract: 2N5771 PN4258 CBVK741B019 F63TNR MMBT5771 PN2222N Transistor 2N5771
Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

MC 140 transistor

Abstract: 2N5771
Contextual Info: 2N5771 I MMBT5771 Discrete POWER & Signal Technologies National Se m iconducto r" MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e ry high s p e e d satu ra te sw itching at c o lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e

2N5771

Abstract: MMBT5771 PN4258
Contextual Info: ssæ i v i ra o „ „ r:^ o « 2N5771 MMBT5771 S O T -2 3 B M a rk : 3 R PNP Switching Transistor T h is d e v ic e is d e s ig n e d for v e ry high s p e e d s a tu ra te s w itc h in g at c o lle c to r c u rre n ts to 1 0 0 m A . S o u rc e d from P ro c e s s 6 5 . S e e

2N5771

Abstract: MMBT5771 PN4258
Contextual Info: 2N5771 MMBT5771 SOT-23 B Mark: 3R PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e ry high s p e e d s a tu ra te s w itc h in g at c o lle c to r c u rre n ts to 1 0 0 m A . S o u rc e d from P ro c e s s 6 5 . S e e P N 4 2 5 8 fo r c h a ra c te ristics .

2N5771

Abstract: PN4258 CBVK741B019 F63TNR MMBT5771 PN2222N
Contextual Info: 2N5771 / MMBT5771 2N5771 MMBT5771 C E C B TO-92 B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: MMBT5771 PNP Switching Amplifier Description C This device is designed for very high-speed, saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 3R B Ordering Information Part Number Marking Package Packing Method MMBT5771

Contextual Info: MMBT5771-2 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)

2N5771

Abstract: Transistor 2N5771 data sheet 2N5771 MMBT5771 PN4258
Contextual Info: N 2N5771 MMBT5771 C E C TO-92 BE SOT-23 B Mark: 3R PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol

2N5771

Abstract: Transistor 2N5771 2N6427 MMBT5771 MMBT6427 MPSA14 PN4258
Contextual Info: 2N5771 MMBT5771 C E C TO-92 BE SOT-23 B Mark: 3R PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol

2N5771

Abstract: 2N5771/MMBT5771
Contextual Info: 2N5771/MMBT5771 National ÆjA Semiconductor MMBT5771 2N5771 U TO - 236 S O T -23 TO-92 Ea f T l/G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP Switching Transistor Electrical Characteristics t a = 25”c unless otherwise noted Parameter Min V(BR)CEO Collector-Emitter Breakdown Voltage

PN4258

Abstract: 2N5771 MMBT5771
Contextual Info: 2N5771 I MMBT5771 & Discrete P O W E R & S ig n a l Technologies _ National S e m i c o n d u c to r” MMBT5771 2N5771 PNP Switching Transistor T h is d e v ic e is d e s ig n e d fo r v e r y h ig h s p e e d s a tu ra te sw itc h in g at c o lle c t o r c u r r e n ts to 1 0 0 m A . S o u r c e d fro m P r o c e s s 6 5 . S e e

Contextual Info: j£r: v p?5? s,: 2N5771 MMBT5771 Mark: 3R PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Contextual Info: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300

2N4291

Abstract: 2N5447 MMBT3638 MMBT3638A MMBT4916 2N4290 pn917 2N5221 BCW29 BCW30
Contextual Info: NATL SEMICOND DISCRETE 52E D • bSQUBQ 27~ òI 003777k' □ ■ PNP General Purpose Transistors by Ascending Vceo Part Type Vcep(V) VcboOO Min Min . HfB Min Max (m A /V ) Ft (MHz) Min 50 50 30 50 200 200 600 120 500/1.0 350/1.0 50/10 10/1.0 60 60 100 850

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2