2N3725 Search Results

Contextual Info: na. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE 973 376-2902 (212) 227-6000 FAX: (973| 376-6060 2N3725A EPITAXIAL PLANAR NPN HIGH-VOLTAGE, HIGH-CURRENT SWITCH ABSOLUTE MAXIMUM RATINGS Collector-base voltage (le = 0) Collector-emitter voltage (Vul;= 0)

2N3724

Abstract: 2N3725 2n3725a transistor 2N3725
Contextual Info: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors

2N3725

Abstract: transistor 2N3725
Contextual Info: 2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT 300 MHz and tight

2N3725

Abstract: TRANSISTOR 2SC 635
Contextual Info: 0/V E F ^ IP 2N3725 NEW ENGLAND SEMICONDUCTOR NPN SWITCHING TRANSISTORS • • • • FAST SWITCHING HIGH VOLTAGE HIGH CURRENT GAIN LOW SATURATION VOLTAGE M A X IM U M R A TIN G S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: m 2N3725 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3725 is Designed for High Current Core Driver, and Saturated Switching Applications. MAXIMUM RATINGS lc 1.0 A V ce 50 V P diss 5.0 W @ Tc = 25 °C P diss 1.0 W @ TA = 25 °C Tj -65 °C to +200 °C T stg

Contextual Info: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur­

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2N3053 equivalent

Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100

Contextual Info: 2N3725A HIGH VOLTAGE - HIGH CURRENT SWITCH 0.79 Transisto. 1 of 1 Home Part Number: 2N3725A Online Store 2N3725A Diodes HIG H VO LTAG E - HIG H C URRENT SWITC H Transistors Enter code INTER3 at checkout.*

2N3725

Contextual Info: 2N3725 NPN Small Signal High Current High Speed Switch. 0.79 Transis. 1 of 1 Home Part Number: 2N3725 Online Store 2N3725 Diodes NPN Sm all Signal High C urrent High Speed Sw it c h. Transistors Enter code INTER3 at

NPN Transistor 1A metal switching

Abstract: transistor 2N3725 2N3725
Contextual Info: 2N3725 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-39 METAL PACKAGE FOR HIGH RELIABILITY APPLICATIONS 6.10 (0.240)

Contextual Info: 2N3725 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2N3725

Abstract: mpq3725
Contextual Info: 2N3725/TN3725/MPQ3725 £ 2 National Semiconductor TN3725 2N3725 MPQ3725 TO-39 T L /G /1 0 1 0 0 -7 T L / G /1 0 1 0 0 - 1 1 NPN Switching Transistor Electrical Characteristics T a = 25°C unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS

TO39 package

Abstract: transistor 2N3725 to39 2N3725
Contextual Info: 2N3725 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2N3724A

Abstract: n37 transistor n3714 3724A 2N3724 2N3725A
Contextual Info: TYPES 2N3724, 2N3724A, 2N3725. 2N3725A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 0 0 8 1 , JU N E 1 9 6 7 - R E V IS E D M A R C H 1973 FA ST, H IG H -VO LTAG E, HIGH-CURRENT C O R E D R IV ER S • h FE Guaranteed from 10 mA to 1.5 A •

2N3724

Abstract: 2N3725 NPN/acsl 086 s
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS 2N3724 2N3725 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N3724 30 2N3725

Contextual Info: 2N3725 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2n3724

Abstract: 2N3725
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.2 An IS/ISO 9002 and IECQ Certified Manufacturer NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS 2N3724 2N3725 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: DRV DRV101 101 DRV 101 SBVS008A – JANUARY 1998 – REVISED OCTOBER 2003 PWM SOLENOID/VALVE DRIVER FEATURES DESCRIPTION ● HIGH OUTPUT DRIVE: 2.3A ● WIDE SUPPLY RANGE: +9V to +60V ● COMPLETE FUNCTION PWM Output Internal 24kHz Oscillator Digital Control Input

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

2N3725

Abstract: 2N3724 NSQ3724 NSQ3725 dc iris driver
Contextual Info: NSQ3724 NSQ3725 QUAD DUAL - IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS • • • • FAST SWITCHING TIMES LOW COLLECTOR-EMMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED - 100 m A dc TO 1.0 Adc TO-116 CERAMIC PACKAGE MAXIMUM RATINGS SY M B O L