DG311 Search Results

Contextual Info: 3ÜE T> m 7^237 QD31111 b m _ — XT V2> S - I ^ r z 7 SCS-THOMSON “ 7# i LH O ra iD i 2 N 2102 S G S-THOMSON GENERAL PURPOSE AMPLIFIER AND SWITCH D E S C R IP T IO N The 2N 2102 is a silicon planar epitaxial NPN trans­

Contextual Info: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax­ ial NPN transistors in Jedec TO-39 metal case, de­ signed for high-current, high-frequency amplifier

Contextual Info: U s e r 's M a n u a l < £ 3 L 0 5 Chapter 5 Z8 In s t r u c t io n S et 5.1 Z8 FUNCTIONAL SUMMARY Z8 instructions can be divided functionally into the follow­ ing eight groups: • ■ ■ ■ Load Arithmetic Logical Program Control ■ ■ ■ ■ Bit Manipulation

ZENER B89

Abstract: DD3113 650NM photodiode OPT202G 10DC CIPT202 OPT202 OPT202P OPT202W
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROWN OPT202 1 E rrfT • PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm) • 1M£2 FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W (650nm) • LOW DARK ERRORS: 2mV The CIPT202 is an optoelectronic integrated circuit

Contextual Info: TOSHIBA TC55V4376FF-100,-83 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM

Contextual Info: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur­

DG500

Abstract: PA66 GF 25 DG375 300V DG127 DG508H DG635 DG310 DG350 dg396
Contextual Info: The PCB Terminal Blocks with 9 kinds of pitch:3.5, 3.81, 5.0, 5.08, 6.35, 7.5,7.62, 9.5, 10.0mm; with 3 kinds of wire insertion directions:90 degree,135 degree,180 degree, can be combined optionally to meet the customers' require. ¡¡ ¡¡ Model Pitch mm

S/KMM5322200BW/BWG-6

Abstract: M53222
Contextual Info: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS

Contextual Info: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder

Contextual Info: TOSHIBA TM P47C853 CM OS 4-BiT M ICROCO NTRO LLER TMP47C853N TMP47C853F The 47C853 is a high perform ance, 4-bit single-chip microcomputer based on the TLCS-470A CMOS series. The 47C853 has a build-in large-capacity RAM fo r repertory dial and a DTMF generator, m aking it ideal for