2MX32 Search Results

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

p 602

Abstract: W82M32V-XBX
Contextual Info: White Electronic Designs W82M32V-XBX 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE FEATURES Low Power CMOS Access Times of 12, 15, 17, 20ns TTL Compatible Inputs and Outputs Packaging • 255 PBGA, 25mm x 25mm, 625mm Fully Static Operation: 2 Organized as 2Mx32 • No clock or refresh required.

O28 Package

Abstract: WF2M32-XXX5 WF2M32U-XG2UX 68 lead CQFJ
Contextual Info: White Electronic Designs WF2M32-XXX5 2Mx32 5V Flash Module FEATURES Access Time of 90, 120, 150ns Organized as 2Mx32 Packaging: Commercial, Industrial, and Military Temperature Ranges • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP Package 401 .

SIMM 80 jedec

Abstract: 80 pin simm flash Flash SIMM 80 E28F016S5 EDI7F342MC
Contextual Info: EDI7F342MC White Electronic Designs 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MC and EDI7F2342MC are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's E28F016S5 2Mx8 Flash device in TSOP packages which are mounted on an

Contextual Info: KM23V64205ASG CMOS MASK ROM 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)

Contextual Info: K4S643233F-S D E/N/I/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 July 2002 Rev. 1.3 July. 2002 K4S643233F-S(D)E/N/I/P CMOS SDRAM Revision History Revision 0.0 (Jan. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die 90FBGA datasheet (V DD/VDDQ 3.0V/3.0V, 3.3V/3.3V).

28F016S3

Abstract: EDI7F342MV 80pin-SIMM
Contextual Info: EDI7F342MV White Electronic 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's 28F016S3 2Mx8 Flash device in TSOP packages which are mounted on an

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: White Electronic Designs EDI7F4342MC 2Mx32 FLASH MODULE DESCRIPTION FEATURES „ 2Mx32 „ Based on Sharp's LH28F016SU Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8

Contextual Info: KMM332V213AJ/AT DRAM MODULE KMM332V213AJ/AT Fast Page Mode 2Mx32 DRAM DIMM based on 2Mx8 Low Power, 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V213A is a 2M bit x • Performance Range: 32 Dynamic RAM high density memory module. The Samsung KMM332V213A consists of four

Contextual Info: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: HANBit HMF2M32F4VSB Flash-ROM Module 8MByte 2Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VSB GENERAL DESCRIPTION The HMF2M32F4VSB is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.

Contextual Info: HANBit HMF2M32F4VA Flash-ROM Module 8MByte 2Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VA GENERAL DESCRIPTION The HMF2M32F4VA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.

M5M4V17800CTP

Abstract: 2MX32
Contextual Info: MITSUBISHI LS Is {DRAM MODULE FAST PAGE MODE DYNAMIC RAM 64i 2MX32 0 * t M BIT Max. Access Type name Load memory time Outward dimensions W X H X D mm) Data sheet page (ns) MH2V32CJJ-5 ★ 50 MH2V32CJJ-6 ★ 60 MH2V32CJJ-7 ★ 70 MH2V32CJJ-5S -k 50 MH2V32CJJ-6S

K4S64323LF-S

Abstract: K4S64323LF
Contextual Info: K4S64323LF-S D N/U/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.5 December 2002 Rev. 1.5 Dec 2002 K4S64323LF-S(D)N/U/P CMOS SDRAM 512K x 32Bit x 4 Banks SDRAM FEATURES GENERAL DESCRIPTION • • • • Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED2M321JSMW/KSMW FAST PAGE MODE 2MX32 DRAM SIMM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED2M321JSMW/KSMW is a 2M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED2M321JSMW/KSMW

km416c1200aj

Abstract: KM416C1200A
Contextual Info: DRAM MODULE KM M5322200A W/AW G KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS

Contextual Info: CMOS MASK ROM KM23V64205ASG 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)

km416c1204aj

Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204BW is a 2M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM5322204C2W/C2WG 2Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5322204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322204CW /CWG to KMM5322204C2W /C2W G caused by PCB revision .

Contextual Info: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

Contextual Info: DRAM MODULE KMM332V204AT KMM332V204AT Fast Page Mode 2Mx32 DRAM DIMM Low Power, 4K Refresh, 3.3V GENERAL DESCRIPTION The Sam sung KM M 332V204AT is a 2M bit x 32 FEATURES • Performance Range: tRAC 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

Contextual Info: Advance Information Synch. MROM KM23SV64205T 2Mx32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Address: Row address: RA0 ~ RA12 Column address: CA0 ~ CA7 x32 : CA0 ~ CA8 (x16)