T3121 Search Results

MMBTH10

Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Contextual Info: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter

Contextual Info: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:

2929 transistor

Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
Contextual Info: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

avantek

Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
Contextual Info: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz

AT-41435

Abstract: transistor K D 2499 transistor 45 f 122 S21E T-31-21 Avantek AT41435 AVANTEK transistor
Contextual Info: AVANTEK I NC 0 A V A N SGE D T E H i m DDOmbT T AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor K ~S >\ - Z . I Features • • • • Avantek 35 micro-X Package • Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz

avantek microwave

Abstract: AVANTEK oscillator Avantek UA-152
Contextual Info: AVANTEK INC 20E D Qavantek • lm n b b GDGbMTa b AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor ' P I I -2.1 Avantek 86 Plastic Package Features • High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB typical Gi dB at 2.0 GHz

T4148

Abstract: AT-41486 AVANTEK transistor Tbb 38 Avantek UA-152
Contextual Info: AVANTEK INC EOE D avan tek • limitt 1 AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 86 Plastic Package Features • Low Noise Figure: 1.4 d B typical at 1.0 GHz 1.7 d B typical at 2.0 GHz • High Associated Gain: 18.0 dB typical at 1.0 GHz

SS TRANSISTOR

Abstract: BF751 t-31-21
Contextual Info: Product specification Philips Semiconductors NPN 6.5 GHz wideband transistor P H ILIP S IN T E R N A T IO N A L £ BF751 S b E D H 711D A E L . 004M R a bT T OWÊt P H IN PINNING FEATURES DESCRIPTION • High power gain PIN • Low noise figure 1 • Gold metallization ensures

PSD3-20

Abstract: PSD5-28
Contextual Info: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10

Contextual Info: AVANTEK Q INC 2D E avantek D im n b fc 00Dti4b3 1 AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor T r ' £ i - ‘Z . l Avantek 100 mil Package Features • Low Noise Figure: 1.6 d B typical at 2.0 GHz 3.0 d B typical at 4.0 GHz • High Associated Galn:14.0 dB typical at 2.0 GH z

avantek

Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
Contextual Info: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz

Transistor SSI 5504 175

Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

BFQ23C

Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

BF199

Abstract: transistor S73 DD421 transistor BF199 transistor NPN BF199
Contextual Info: BF199 — K - PHILIPS INTERNATIONAL SbE D WË _ J z lt ll

AVANTEK transistor

Abstract: lm 3907 Avantek UA-152
Contextual Info: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz

Avantek amplifier 8 12 GHz

Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
Contextual Info: A V A N T E K INC SDE D • limibb G0Db4fl3 4 AT-42000 Up to 6 GHz Medium Power Transistor Silicon Bipolar Transiste Chip avantek Avantek Chip Outline Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

HXTR3685

Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
Contextual Info: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription

Contextual Info: 3QE D rz 7 S G H 7^5^237 QD311b3 3 H 1— J^ \ I sgs-thomson Mn lf3miCT «@§_ 2N3137 S- TH OM SO N RF AMPLIFIER DESCRIPTION The 2N3137 is a silicon planar epitaxial NPN tran­ sistor in a TO-39 metal case. It is a primarily de­ signed for application as a Class-C, RF power am­

AT42070

Abstract: oscillator 77 GHZ Avantek amplifier Avantek power amplifier AT-42070 T-31-21 AVANTEK oscillator
Contextual Info: AVANTEK INC SGE D • im n b b DGDbMTa S AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * Features Avantek 70 mil Package • .uqu • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical PidB at 4.0 GHz High Gain at 1 dB Compression:

Asg TRANSISTOR

Abstract: 008a AT-42086 AT-42086-TR1 T-31-21 Avantek amplifier AVANTEK transistor
Contextual Info: AVANTEK INC EOE D AVANTEK • 11411ht GDGb4Tà AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 86 Plastic Package Features • • • • • • b High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression:

Contextual Info: AVANTEK Q a v aüE D INC a n t e • i i m i h t 0001=4^2 s AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * k ' Features Avantek 70 mi! Package • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

Contextual Info: AVANTEK EGE INC D 0AVANTEK • l m n t b G00b4fli 5 AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Com pression:

Contextual Info: AVANTEK INC 50E D O a v a n tg k lm n tb AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor Avantek TO-72 Package Features • • • • 0G0b47s s Low Noise Figure: 1 .3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz

AT-41472

Abstract: Avantek amplifier 8 12 GHz AVANTEK transistor AT41472 avantek T-31-21 Avantek, Inc AT414 AVANTEK oscillator
Contextual Info: 50E D AVANTEK INC AVANTEK •limitfa Q0Gb47S S AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor Avantek TO-72 Package Features • • • • Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz