008A Search Results
008A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 51720-10802008AALF |
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PwrBlade®, Power Supply Connectors, 8P 20S 8P Right Angle Header. | |||
| 863008ATLF |
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D-Sub Accessories, Input Output connectors, Male Screw Lock | |||
| 51700-10802008AALF |
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PwrBlade®, Power Supply Connectors, 8P 20S 8P Vertical Header. | |||
| 54202-T3008ALF |
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BergStik®, Board to Board connector, Unshrouded Vertical Header, Surface Mount, Double Row, 16 Positions, 2.54 mm (0.100in) Pitch. | |||
| 59202-G30-08A52LF |
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Minitek® 2.00mm, Board To Board, Unshrouded Vertical Header, Surface Mount, Double Row, 16 Positions. |
008A Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 008A | Essentra Components | TAPERED CAP - OD RANGE: 8.4 - 10 | Original | 4.78MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE6008AS
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NCEPOWER | 60V, 8A NCE6008AS enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, suitable for power switching and load switch applications in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTG3008A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN5x6-8L package, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSL1008AC
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET with 6.5 mΩ typical RDS(ON) at VGS = 10V, 114A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1008AE
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel power MOSFET with 6.8 mΩ typical RDS(ON) at 10V VGS, 112A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSL1008AE
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET with 6.5 mOhm typical RDS(on) at 10V VGS, 114A continuous drain current, low gate charge, and available in TO-220-3L and TO-263-3L packages. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSL1008AGQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-Ch Power MOSFET in PDFN5x6-8L package with 6.0 mΩ typical RDS(ON) at VGS = 10V, 88A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1008AC
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel power MOSFET with 6.8 mOhm typical RDS(ON) at 10V VGS, 112A continuous drain current, available in TO-220-3L and TO-263-3L packages, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBC-1008A-R28T
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JWD | Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSL1008AP
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in SOP-8L package with 7.4 mΩ RDS(ON) at VGS = 10V, 12A continuous drain current, low gate charge, and ultra-low on-resistance for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK6008AS
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AK Semiconductor | AK6008AS N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 8A continuous drain current, RDS(ON) less than 20mΩ at VGS=10V, and low gate charge for efficient switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSL1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ typical RDS(ON) at 10V VGS, 98A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTP3008A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 15A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.7mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, featuring SOP-8 package, advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBC-1008A-R15T
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JWD | Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PBC-1008A-R22T
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JWD | Power Bead Inductor for server applications, featuring high current capacity over 125Apk, operating temperature from -40°C to 125°C, ultra low DCR, and RoHS compliance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1008AKQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-Ch Power MOSFET in TO-252-3L package with 6.9 mΩ RDS(ON) at VGS = 10V, 92A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTQ3008A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6m ohm at VGS=10V, available in PDFN3x3-8L package, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSL1008AK
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in TO-252-3L package with 6.7 mΩ RDS(ON) at VGS = 10V, 82A continuous drain current, low gate charge, and 1.7 Ω gate resistance, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBC-1008A-R30T
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JWD | Power Bead Inductor PBC-1008A-RXXT series features single turn construction, ferrite core, ultra low DCR, high energy density, flat inductance over frequency, rated current up to 64A, operating temperature from -40°C to +125°C, and complies with AEC-Q200. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
008A Price and Stock
Essentra Components 008AHOLE PLUG LOW-DENSITY PE BLUE |
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Essentra Components CCL008ACBL CLAMP P-TYPE NAT FASTENER |
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CCL008A | Bag | 3,360 | 1 |
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KEMET Corporation T525T336M008ATE080CAP TANT POLY 33UF 8V 1411 |
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T525T336M008ATE080 | Digi-Reel | 3,000 | 1 |
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TDK-Lambda Corporation I7C4W008A120V-0F1-RDC DC CONVERTER 9.6-48V 300W |
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I7C4W008A120V-0F1-R | Box | 698 | 1 |
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Amphenol Communications Solutions FLHG3P008A03 POSITION,PLUG TO PLUG,SOCKET,D |
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008A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: □IXŸS DSSK 70-008A Power Schottky Rectifier •f a v with common cathode V rrm VF v RSM v rr« V V 70 70 i- j Typ e A DSSK 70-008A C 1 2x35 A 70 V 0.66 V TO-247 AD A C TAB Symbol Test Conditions Maximum Ratings 70 35 70 A A A 700 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive |
OCR Scan |
0-008A O-247 D98004E D-68623 GGD473Ã | |
49LF002A
Abstract: 49lf003a 33-4c-nh 49lf004a 49lf008a 49LF003A sst 49lf008a bios chip SST49LF004A SST49LF003A MPF 120 49lf003a datasheet
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SST49LF002A SST49LF003A SST49LF004A SST49LF008A 008A2 32-tsop-WH-ILL MO-142 32-LEAD S71161-06-000 49LF002A 49lf003a 33-4c-nh 49lf004a 49lf008a 49LF003A sst 49lf008a bios chip MPF 120 49lf003a datasheet | |
pj- 030 dc jack
Abstract: pj- 030 "DC Power Jack" 008a
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PJ-008A pj- 030 dc jack pj- 030 "DC Power Jack" 008a | |
HD74BC245A
Abstract: Hitachi DSA00398
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HD74BC245A ADE-205-008A HD74BC245A Hitachi DSA00398 | |
80Wat
Abstract: Valox 420-SEO Singatron 3P AC-008A Singatron valox 420 94v valox 420 pbt valox 420 seo
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OCR Scan |
2AC-008A II---1201 420-SEO 250VAC: 80WATT AC-008A 2AC-008ADÃ AC-008A 80Wat Valox 420-SEO Singatron 3P Singatron valox 420 94v valox 420 pbt valox 420 seo | |
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Contextual Info: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 |
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35-008AR 247TM | |
MPI-806H
Abstract: MPE-008A-P 12v dc to atx power supply 12v 1a universal input voltage power supply over voltage 12v DC 60W dc 12v 60w N80W
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MPE-008A-P 100uA 120mv MPI-806H MPE-008A-P 12v dc to atx power supply 12v 1a universal input voltage power supply over voltage 12v DC 60W dc 12v 60w N80W | |
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Contextual Info: 4 Mbit / 8 Mbit Firmware Hub SST49LF004A / 008A SST49LF004A / 008A4 Mb / 8 Mb Firmware Hub for Intel 8xx Chipsets Data Sheet FEATURES: • Firmware Hub for Intel 8xx Chipsets • 4 Mbit and 8 Mbit SuperFlash memory array for code/data storage – SST49LF004A: 512K x8 4 Mbit |
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SST49LF004A SST49LF008A 008A4 SST49LF004A: SST49LF008A: 1024K SST49LF004A/008A 40-lead | |
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Contextual Info: Advanced Technical Information IFAV = 2x35 A VRRM = 80 V V F = 0.64 V Power Schottky Rectifier with common cathode VRSM VRRM V V 80 80 DSSK 70-008AR A Type C A ISOPLUS 247TM A DSSK 70-008AR C A Isolated back surface * C = Cathode, A = Anode Symbol Conditions |
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70-008AR 247TM | |
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Contextual Info: SN 5 4 F 2 8 0 B , SN74 F2 80 B 9-BIT PAR I TY G E N E R A T O R S / C H E C K E R S _ S D FS 008A-D 2932, APRIL 1 9 8 6 - REVISED OCTOBER 1993 * G e n e ra te s E ith e r O dd or Even P a rity fo r N ine Data L in e s * C a s c a d a b le fo r N -B its P a rity |
OCR Scan |
08A-D SN54F280B SN74F280B 300-m | |
XC6701B
Abstract: XC6701B332 XC6701 XC6701D etr0334-008a
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XC6701 ETR0334-008a XC6701B XC6701B332 XC6701D etr0334-008a | |
lm303
Abstract: DCM7* DIODE infrared wireless headphones circuit diagram TSL26X IC for IR receiver texas instruments optical sensors reflective optocoupler TSL262 TSL260 TSL261
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OCR Scan |
TSL260, TSL261, TSL262 SOES008A-DECEMBER 1992-REVISED TSL260) TSL262 bl724 lm303 DCM7* DIODE infrared wireless headphones circuit diagram TSL26X IC for IR receiver texas instruments optical sensors reflective optocoupler TSL260 TSL261 | |
Mo-008Contextual Info: Package Information Vishay Siliconix MO-008AA: 6 LEAD C P D P N E N F N ØA ØB N K J L CL Notes 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Measured in the zone beyond 0.250" 6.35 mm from the seating plane. |
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MO-008AA: E09-1031-Rev. 23-Feb-09 Mo-008 | |
CY22800
Abstract: CY22800FXC
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AN6033 CY22800FXC-008A. CY22800 CY22800FXC-008A CY22800FXC | |
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70008aContextual Info: Advanced Technical Data DSSK 70-008A Power Schottky Rectifier IFAV = 2x35 A VRRM = 80 V VF = 0.66 V with common cathode VRSM VRRM V V 80 80 TO-247 AD Type A DSSK 70-008A C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings |
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0-008A O-247 70008a | |
ksh13008
Abstract: NPN Transistor 8A
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KSH13008A KSH130 OTO-220 54typ ksh13008 NPN Transistor 8A | |
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Contextual Info: Advanced Technical Data DSSK 70-008A Power Schottky Rectifier IFAV = 2x35 A VRRM = 80 V VF = 0.66 V with common cathode Preliminary Data VRSM VRRM V V 80 80 TO-247 AD Type A C A A C DSSK 70-008A A Symbol Test Conditions IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 |
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0-008A O-247 | |
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Contextual Info: TERMINAL NUMBER .5 [0.059] •sj- CD ro r-O O ro 3 [0.118] 15.3 [0.602] PJ-008A MODEL NO. SCHEMATIC >°1 r ^& A —!— SPECIFICATIONS: RATING: 12V DC @ 1A CONTACT RESISTANCE: 30m OHMS MAX INSULATION RESISTANCE: 50M OHMS MIN: 100V DC VOLTAGE WITHSTAND: 250V AC R.M.S. FOR 1 MINUTE |
OCR Scan |
PJ-008A PJ-008A | |
49LF002A
Abstract: 49lf003a 33-4c-nh 49lf004a 49lf003a 33-4c sst 49lf008a bios chip SST49LF002A SST49LF003A SST49LF004A SST49LF008A
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SST49LF002A SST49LF003A SST49LF004A SST49LF008A 008A2Mb SST49LF002A: SST49LF003A: SST49LF004A: SST49LF008A: 49LF002A 49lf003a 33-4c-nh 49lf004a 49lf003a 33-4c sst 49lf008a bios chip SST49LF008A | |
49LF002A
Abstract: 49lf004a 49lf003a 33-4c-nh 49LF003 49LF003A 5t95 st49lf00 sst 49lf008a bios chip SST49LF004A-33-4C-NHE SST49LF002A
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SST49LF002A SST49LF003A SST49LF004A SST49LF008A 008A2 SST49LF002A: SST49LF003A: SST49LF004A: SST49LF008A: 49LF002A 49lf004a 49lf003a 33-4c-nh 49LF003 49LF003A 5t95 st49lf00 sst 49lf008a bios chip SST49LF004A-33-4C-NHE | |
35-008ARContextual Info: DSSS 35-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.68 V Power Schottky Rectifier dual diode VRSM VRRM V V 80 80 A Type C/A C ISOPLUS 247TM C A/C DSSS 35-008AR A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 |
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35-008AR 247TM 35-008AR | |
adsl splitter circuit diagram
Abstract: ADSL2 Modem circuit diagram ADSL splitter circuit ADSL2 splitter ADSL splitter adsl2 modem ADSL2 CO splitter CLSP-008 CLSP-008A phone line splitter circuit diagram
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600ohm CLSP-008A CLSP-008A 30K-300KHz 300K-1 YD/T1187-2006 2003dB 100uS adsl splitter circuit diagram ADSL2 Modem circuit diagram ADSL splitter circuit ADSL2 splitter ADSL splitter adsl2 modem ADSL2 CO splitter CLSP-008 phone line splitter circuit diagram | |
49LF002A
Abstract: 49lf004a 49LF008A 49LF003A 49lf008 49lf003a 33-4c-nh SST49LF008A-33-4C-EIE SST49LF008A 82801 ibm 008A2
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SST49LF002A SST49LF003A SST49LF004A SST49LF008A 008A2 SST49LF002A: SST49LF003A: SST49LF004A: SST49LF008A: 49LF002A 49lf004a 49LF008A 49LF003A 49lf008 49lf003a 33-4c-nh SST49LF008A-33-4C-EIE SST49LF008A 82801 ibm | |
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Contextual Info: Advanced Technical Data DSSK 70-008A IFAV = 2x35 A VRRM = 70 V VF = 0.66 V Power Schottky Rectifier with common cathode VRSM VRRM V V 70 70 TO-247 AD Type A DSSK 70-008A C A A C A Symbol Test Conditions IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 TC = 150°C; rectangular, d = 0.5; per device |
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0-008A O-247 D98004E D-68623 | |