70008A Search Results

d70008

Abstract: PD70008 MPD70008A ud70 cpdr 70008A UD700 D70008A 8AAD PD70008A
Contextual Info: NEC JU P D 70008/A 8 -B IT C M O S M IC R O P R O C E S S O R S NEC Electronics Inc. D escription Pin C onfigurations T h e /j P D 70008 and jjP D 70008A are pow er saving, high p e rfo rm an ce, general p u rp ose 8-bit m icroprocessor. It is a C M O S -p ro ces s p a rt w ith a stand by m o d e th at

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

Contextual Info: □IXŸS DSSK 70-008A Power Schottky Rectifier •f a v with common cathode V rrm VF v RSM v rr« V V 70 70 i- j Typ e A DSSK 70-008A C 1 2x35 A 70 V 0.66 V TO-247 AD A C TAB Symbol Test Conditions Maximum Ratings 70 35 70 A A A 700 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Advanced Technical Information IFAV = 2x35 A VRRM = 80 V V F = 0.64 V Power Schottky Rectifier with common cathode VRSM VRRM V V 80 80 DSSK 70-008AR A Type C A ISOPLUS 247TM A DSSK 70-008AR C A Isolated back surface * C = Cathode, A = Anode Symbol Conditions

8251a usart interface from z80

Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
Contextual Info: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows

nec 2561 equivalent

Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such

Digital IC CMOS 16x1 mux

Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Contextual Info: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A

d70008

Abstract: pd70008 PD70008A-4 UPD70008 D 4044 BC tCYK-30 mpd70008 pd70008ac JPD780 PD70008A
Contextual Info: SEC ¿¿PD70008/A 8-BIT CMOS MICROPROCESSORS NEC Electronics Inc. Description Pin Configurations The jPD70008 and 70008A are power saving, high performance, general purpose 8-bit microprocessor. It is a CMOS-process part with a standby mode that greatly reduces power consumption.

70008a

Contextual Info: Advanced Technical Data DSSK 70-008A Power Schottky Rectifier IFAV = 2x35 A VRRM = 80 V VF = 0.66 V with common cathode VRSM VRRM V V 80 80 TO-247 AD Type A DSSK 70-008A C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings

Contextual Info: Advanced Technical Data DSSK 70-008A Power Schottky Rectifier IFAV = 2x35 A VRRM = 80 V VF = 0.66 V with common cathode Preliminary Data VRSM VRRM V V 80 80 TO-247 AD Type A C A A C DSSK 70-008A A Symbol Test Conditions IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

NEC 2561

Abstract: transistor f422 transistor f423 nec 2561 equivalent transistor f422 equivalent transistor NEC D 882 p verilog code for 8254 timer TBA 931 nec d 882 p datasheet nec 2561 datasheet
Contextual Info: CB-C7, 3-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. Preliminary October 1993 Description Figure 1. Integrated HDD Solution with CB-C7 Cell-Based ASIC and Embedded Megafunctions The CB-C7, 3-volt cell-based product family is intended for low power portables and battery-operated products. A

Contextual Info: Advanced Technical Data DSSK 70-008A IFAV = 2x35 A VRRM = 70 V VF = 0.66 V Power Schottky Rectifier with common cathode VRSM VRRM V V 70 70 TO-247 AD Type A DSSK 70-008A C A A C A Symbol Test Conditions IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 TC = 150°C; rectangular, d = 0.5; per device

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

DSSK 70-008AR

Contextual Info: DSSK 70-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.64 V Power Schottky Rectifier with common cathode VRSM VRRM V V 80 80 A Type C A ISOPLUS 247TM A DSSK 70-008AR C A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV

Contextual Info: Advanced Technical Data DSSK 70-008A Power Schottky Rectifier IFAV = 2x35 A VRRM = 80 V VF = 0.66 V with common cathode VRSM VRRM V V 80 80 TO-247 AD Type A DSSK 70-008A C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings

2x81-0045

Abstract: 70008A DSS2X160-01A 2x160 DSS2*160 6Y045AS 80-0045B 60-0045B 2x121 DSS 2x160-01A
Contextual Info: Power Schottky Rectifier Diodes Schottky Diodes Contents 1 TO-220 AC 2 3 A 1 15 20 6 6 15 15 2x 20 2x 35 1 25 25 2 6 25 25 2x 25 2x 25 TO-263 AB TO-252 AA TO-247 AD 6 V Circuit Diagram Page D4- 0.33 DSS 20 B 4 0.32 DSSK 40 0.33 DSSK 70 B B 6 8 0.44 DSS 25

D70320L

Abstract: NEC V25 70320 nec V20 70108 nec v53 cpu V20 70108 70320L 8088 microprocessor DMA NEC Microprocessors and Peripherals v53 cpu 70008A
Contextual Info: N E C ELECTRONICS INC NEC 30E D • b4S7S55 0025174 5 ■ V-SERIES MICROPROCESSORS AND PERIPHERALS Part Numbering System H PD 70320L HP D 70320 L Typical m icrodevice part number N E C monolithic silicon integrated circuit Device type D = digital M O S Device identifier (alphanumeric)

Contextual Info: DSSK 70-008AR IFAV = 2x35 A VRRM = 80 V V F = 0.64 V Power Schottky Rectifier with common cathode VRSM VRRM V V 80 80 A Type C A ISOPLUS 247TM A DSSK 70-008AR C A Isolated back surface * C = Cathode, A = Anode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV

70008A

Contextual Info: PSSK 70-008A Advanced Technical Data Power Schottky Rectifier lFAV = 2x35 A VRR„ = 80 V VF = 0.66 V with common cathode v’ rsm v rrm V V 80 80 Lj.5.I- TyPe A C DSSK 70-008A + TO-247 AD A C TAB Symbol Test Conditions ^FRMS ^FAV Uav Tc = 150°C; rectangular, d = 0.5