NDS9945 Search Results

IRF540

Abstract: IRF540 application IRF5402 NDS9945 irf540 equivalent A3933EQ IRF5405 j142 30D2 J132
Contextual Info: VCCOUT VMOTOR 1 .1uf W1 JUMPER J25 3 J13 2 27 BRKSEL J15 2 J17 BRAKE 1 2 H1 1 J18 26 24 2 20 22 1 PWM GHB CB BRKSEL SB BRAKE GLB 9 CB 10 SB 8 GLB 7 H1 GHC GHC H3 2 R11 100K C9 470pf SC GLC 5 CC 6 SC 4 GLC 3 .047uf 2 J14 2 2 U3B 1 NDS9945 1 4 3 3 30 R9 30 J19

NDS9945

Abstract: SOIC-16 OC601
Contextual Info: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9945

Abstract: 9945 motor 9945 So-8 ic 9945 a 8 pin F011 F63TNR F852 L86Z SOIC-16
Contextual Info: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9945

Abstract: 2501lA
Contextual Info: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.

NDS9945

Abstract: mosfet motor dc 48v
Contextual Info: F e b ru a ry 1 9 9 6 N NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel enhance m en t m ode po w e r field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

Contextual Info: February 1996 N NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

NDS9945

Contextual Info: N February 1996 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: May 1998 F A IR C H IL D EMICDNDUCTORi NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9945

Abstract: LD4e
Contextual Info: FAIRCHILD February 1996 S E M IC O N D U C T O R -M NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General D escription Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

lm324 inverter sensing circuit

Abstract: CCFL INVERTER TRANSFORMERS Royer oscillator Notebook lcd inverter schematic 50khz resonant frequency Royer oscillator circuit diagram SGE2694-1 ccfl inverter schematic ccfl transformer buck royer inverter lcd
Contextual Info: Microsemi Application Note ANAN-13 LX1686 Direct Drive CCFL Inverter Design Reference George Henry Microsemi – Power Management Group L I N F I N I T Y Copyright 2000 Rev. 1.5, 9.01 D I V I S I O N AN-13 LX1686 Direct Drive CCFL Inverter Design Reference

601lt

Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
Contextual Info: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

DIODE ED 34

Abstract: A3933EQ Allegro NDS9945 Three-Phase Brushless DC Motor Controller DIODE ED 26 diode ED 21
Contextual Info: BOARD, DEMO, A3933EQ 76-0701-000-BOM Revision: 4 Revised: September 25, 2000 Page 1 of 2 Allegro MicroSystems Bill Of Materials Originator: Joyce Roche Allegro Item Qty Reference Value Description Stock Number

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

NDS9435

Abstract: NDS9945 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948 NDS9955
Contextual Info: D M fte c E T c / *• T> m bäE Power M OSFETS continued bSQ113G 003^4^3 OOT « N S C 5 SOIC-8 Dual/Single DMOS soice 81 NChannel NATL SEfllCOND rOS(on) (Volts) Min Device VGS= 10V Ves = 4.5V (DISCRETE) 1 •o Po (A) Max (Watts) Max Configuration Pin Out

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

FDS4953

Abstract: FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975
Contextual Info: Discrete MOSFET SO-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SO-8 N-Channel FDS6898A 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6898AZ 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6894A

NDS9945

Abstract: 20W Solenoid Driver 5V GATE TO SOURCE VOLTAGE MOSFET NDP706A Automatic Valve Systems parallel MOSFET Transistors parallel mosfet cgs resistor control circuit for mosfet to turn on and off Deutsch time delay Relays
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description Features The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch A CMOS logic compatible ON OFF input controls the output gate drive voltage In the

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the

20W Solenoid Driver

Abstract: LM9061 LM9061M LM9061N M08A NDB708A NDP706A NDP706B NDP708A MOSFETs Application Hints
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the