NDC632P Search Results
NDC632P Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NDC632P | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 256.56KB | 10 | ||
| NDC632P | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Effec | Original | 77.15KB | 7 | ||
| NDC632P | National Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 100.03KB | 7 | ||
| NDC632P | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| NDC632P | National Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Scan | 328.88KB | 6 | ||
| NDC632P | National Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Scan | 211.32KB | 6 | ||
| NDC632P_NF073 | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Transistor | Original | 77.15KB | 7 | ||
| NDC632P_NL | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Transistor | Original | 77.15KB | 7 |
NDC632P Price and Stock
Fairchild Semiconductor Corporation NDC632PP-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
NDC632P | 4,499 |
|
Get Quote | |||||||
NDC632P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
diode 6t6
Abstract: NDC632P
|
OCR Scan |
ndc632psupe202diode 6t6 | |
transistor 632p
Abstract: 632p
|
OCR Scan |
ndc632ptransistor 632p632p | |
|
Contextual Info: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS |
OCR Scan |
junel996ndc632p | |
NDC632PContextual Info: N Junel996 NDC632P P-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T hese P-C hannel logic level en h an cem en t m ode po w er field effect transistors are produ ced using N ationals proprietary, high cell density, DMOS |
OCR Scan |
junel996ndc632p | |
NDC632PContextual Info: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using |
Original |
june1996ndc632p | |
CBVK741B019
Abstract: F63TNR FDC633N NDC632P RCA 014
|
Original |
june1996ndc632pcbvk741b019f63tnr+2 | |
NDC632PContextual Info: N June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is |
Original |
june1996ndc632p | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
|
Original |
2n7000irf7203fds9435a2n7002+14 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
|
Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
NDT453N
Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
|
OCR Scan |
t-223ndc631nfdc6303nfdc6301n+11 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
|
Original |
2n70002n70022n7002e2n7002k+15 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
|
Original |
2n70002n70022sj3772sj378+16 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
|
Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
08390
Abstract: CDRH6D28-100 08149 MAX1701 NDC632P
|
Original |
cdrh6d28-100max1701100uf100pf+6 | |
|
|
|||