NDH8501N Search Results
NDH8501N Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NDH8501N | Fairchild Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 72.87KB | 6 | ||
| NDH8501N | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| NDH8501N | Fairchild Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Scan | 155.91KB | 6 |
NDH8501N Price and Stock
Fairchild Semiconductor Corporation NDH8501NDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
NDH8501N | 42,000 |
|
Get Quote | |||||||
NDH8501N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NDH8501NContextual Info: December 1996 NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density |
Original |
ndh8501n | |
NDH8501NContextual Info: FAIRCHILD Decem ber 1996 MICDNDUCTOR NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density |
OCR Scan |
ndh8501n | |
NDH8501NContextual Info: N September 1996 PRELIMINARY NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS |
Original |
ndh8501n | |
|
Contextual Info: R A I R C H I I- D December 1996 M IC D N D U C T O R ^ NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, |
OCR Scan |
ndh8501n | |
|
Contextual Info: FAIRCHILD December 1996 Ml CONDUCTOR NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features S upe rS O T -8 N -C hannel en hancem ent m ode pow er field effe ct tra nsistors are produce d using Fairchild's proprietary, |
OCR Scan |
ndh8501nh8501n | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
|
Original |
2n7000irf7203fds9435a2n7002+14 | |
NDT453N
Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
|
OCR Scan |
t-223ndc631nfdc6303nfdc6301n+11 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
|
Original |
2n70002n70022sj3772sj378+16 |