H11B2 Search Results

optocouplers 501 IC

Abstract: TIL113 CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

H11BX

Abstract: CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3 MOC8080 TIL113
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

E91231

Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
Contextual Info: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18

PS2004B

Abstract: PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860
Contextual Info: — fiumu LE D -D arlin g to n Transistor with Base Connection LED- 2" — U > h > • 7 * h • è uj $1 PS2004B PS2014 MFCD850 4N29 4N30 4N31 4N32 4N33 4N38 FCD850 FCD855 FCD860 FCD865 H11B1 H11B2 MCA230 MCA231 # i i -6 jF 50 i 'J 'J # JED E C 80 60 80

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

H11B1

Abstract: H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

Contextual Info: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC

H11B255

Contextual Info: G E SOLID STATE DE ^3875001 Û 0 M 7 1 5 5 | 01 Optoelectronic Specifications i Photon Coupled Isolator H11B255 SYM30L Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H 11B255 consists of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington amplifier in a dual in-line package. This device is

optocoupler H11b1

Abstract: H11B1-X007 H11B1 H11B1-X009 H11B2 H11B2-X009 H11B3
Contextual Info: H11B1, H11B2, H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC

H11B255

Abstract: sot-90B OPTOCOUPLER dc
Contextual Info: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo­ Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio

switch H11B

Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.

DIN EN 50014 STANDARD

Abstract: H11B1 H11B1-X007 H11B2 H11B3 VDE0884
Contextual Info: H11B1/ H11B2/ H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • • • • Isolation test voltage, 5300 VRMS Coupling capacitance, 0.5 pF Lead-free component Component in accordance to RoHS 2002/95/EC

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

Contextual Info: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also

Contextual Info: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR M in im u m at l F = 1 m A H 1 1 B 1 ,500% H11 B 2 ,2 0 0 % PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches mm I?1 Ù ] f?l Anode [ E .248(6.30) 256 (6.50) J D Base i Cathode (~2 _ J H 1 1 B 3 ,100%, * W ith s ta n d T e s t V o lta g e , 7500 V o lt

Contextual Info: H11B1/H11B2/H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES • Isolation test voltage: 5300 VRMS • Coupling capacitance, 0.5 pF • Lead Pb -free component A 1 6 B C 2 5 C NC 3 4 E • Component in accordance to RoHS 2002/95/EC

optocouplers 501

Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

H11B1

Abstract: H11B2 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

ST1736

Abstract: optocouplers H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES

Contextual Info: Optoisolator Specificatio ns_ H11B1, H11B2, H11B3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H 11B 1, H I1 B 2 a n d H 11B 3 are g alliu m a rsen id e, infrared e m ittin g d io d es c o u p le d w ith a s ilic o n p h o to -D a rlin g to n a m p lifier in

marking CODE n3 6PIN

Abstract: EL4N33 SMD 6PIN IC MARKING CODE n3
Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

CNX48U

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

optocouplers H11B1

Contextual Info: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR Minimum at lf = 1 mA H11B1, 500% H11B2,200% H11B3,100% * Withstand Teat Voltage, 7500 Volt * Coupling Capacitance, 0.5 pF * Underwriters Lab File #E52744 * VDE Approval «0884 Optional with Option 1, add -X001 Suffix