4N32 Search Results

Contextual Info: PHOTO-TRANSISTOR 4N29,29A,30,31, 4N32,32A, 33 Short (4 N 2 9 (S h o rt() A C LIN E/D IG ITA L LOGIC ISOLATOR. DIG ITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TW ISTED PAIR LINE RECEIVER. R ELA Y CO N TA CT M ONITOR. The TOSHIBA 4N29 (Short) through 4N33 (Short) consists arsenide

4N33 APPLICATION NOTE

Abstract: 4N29 APPLICATION NOTE 4N32A 4N32ASHORT 4n29
Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

4N33

Abstract: 4N32 4N33 APPLICATION NOTE 4n29 optocoupler 4n33 optocoupler datasheet 4n29 optocoupler Fairchild 4N32 4N29 4N30 4N31
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N29 APPLICATION NOTE

Abstract: optocoupler base resistor low voltage optocoupler ic 6-pin
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Fairchild 4N32

Abstract: 4n29 optocoupler 4n33s fairchild
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

opto-coupler

Abstract: 4n29
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N33 APPLICATION NOTE

Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IBA TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE /DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

PS2004B

Abstract: PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860
Contextual Info: — fiumu LE D -D arlin g to n Transistor with Base Connection LED- 2" — U > h > • 7 * h • è uj $1 PS2004B PS2014 MFCD850 4N29 4N30 4N31 4N32 4N33 4N38 FCD850 FCD855 FCD860 FCD865 H11B1 H11B2 MCA230 MCA231 # i i -6 jF 50 i 'J 'J # JED E C 80 60 80

Contextual Info: 4N32/4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Very high current transfer ratio, 500 % min. A 1 6 B C 2 5 C NC 3 4 E • High isolation resistance, 1011 Ω typical • Standard plastic DIP package

Contextual Info: 4N32/4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Very high current transfer ratio, 500 % min. A 1 6 B C 2 5 C NC 3 4 E • High isolation resistance, 1011 Ω typical • Standard plastic DIP package

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

opto 4N33

Abstract: 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33
Contextual Info: MOTOROLA Order this document by 4N29/D SEMICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output [CTR = 100% Min] The 4N29/A, 4N30, 4N31, 4N32 1 and 4N33(1) devices consist of a gallium

4N33 APPLICATION NOTE

Abstract: C1106 transistor GE 4N33 CI-105 CHARACTERISTICS DIODE 10SI 10 PA494 transistor c2090 JYUL 4N32 4N33
Contextual Info: "âfl GENL INSTRn OPTOELEK 3890128 GENL IN S T R , O PTO ELEK GENERAL dF | n a ^ m a s oaaaâS5 88D 02855 D T ~ 4 l PHOTODARLINGTON OPTOCOUPLERS INSTRUMENT 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION •fi» Æ f t ! 6.86 .270 6.35 (.250) I t o W W W ] 8.89 (.350)

datasheet 4n29 optocoupler

Abstract: til113 4N29M 4N30M 4N32M 4N32SM 4N32SR2M 4N33M H11B1M TIL113M
Contextual Info: 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N32A

Abstract: 4n33 4N29A DARLINGTON 4N32 4N29 4N30 4N31 4N32 E67349
Contextual Info: TO SH IBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short)# 4N29A(Short)f 4N30(Short)f 4N31 (Short) 4N32(Short)# 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.

tcdt1121

Abstract: ITS 80062 K1150PG GE cny17 GE 4N35 vishay TCDT1121 tcdt1103g 4N33 Data sheet CNY75GB CQY80N
Contextual Info: Vishay Semiconductors Packing and Marking Informations Part Number 4N25 4N25GV 4N25V 4N26 4N27 4N28 4N32 4N33V 4N33 4N35 4N35GV 4N35V 4N36 4N37 CNY17–1 CNY17–2 CNY17–3 CNY17–4 CNY17G–1 CNY17G–2 CNY17G–3 CNY17G–4 CNY64 CNY64A CNY64B CNY65 CNY65A

atk63

Abstract: 11-Jan-99
Contextual Info: 4N32/ 4N33 Vishay Semiconductors Optocoupler with Photodarlington Output Description The 4N32 and 4N33 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.

tcdt1121

Abstract: K1150PG Telefunken tk19 tk19 tcdt1121g VISHAY tk19 tfk 918 et1100 TFK CNY65 4N25 TFK
Contextual Info: Vishay Telefunken Packing and Marking Informations Part Number 4N25 4N25GV 4N25V 4N26 4N27 4N28 4N32 4N33V 4N33 4N35 4N35GV 4N35V 4N36 4N37 CNY17–1 CNY17–2 CNY17–3 CNY17–4 CNY17G–1 CNY17G–2 CNY17G–3 CNY17G–4 CNY64 CNY64A CNY64B CNY65 CNY65A

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier The 4N29 through 4N33 devices consist of a gallium arsenide infrared em itting diode coupled with a silicon photo-D arlington amplifier in a

4N29

Abstract: 4N30 4N31 4N32 4N33
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT The 4N29, 4N30, 4N31, 4N32, 4N33 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line

4N32 test circuit

Abstract: 4N32 ATK63 4N33 optocoupler 4n33 4n33 optocoupler switches circuits
Contextual Info: 4N32/ 4N33 Vishay Telefunken Optocoupler with Photodarlington Output Description The 4N32 and 4N33 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

diode cc 3053

Abstract: cc 3053 cc 3053 diode Infrared Temperature Sensor dip-6 IEC60065 K 3053 4N32 VDE0884 8172-1
Contextual Info: 4N32-3053 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % Min. • High isolation resistance, 1011 Ω typical • Standard plastic DIP package

Contextual Info: SIEMENS CMPNTS-i OPTO 44E D • 1 HISI EX 4N32/4N33 fl23b3Sfei 0 0 0 4 ci72 SIEM EN S - T - H I- 2 S PHOTODARLINGTON OPTOCOUPLER Optocouplers Oploisolalors Gallium Arsenide LEO (Drive Circuit) Power Dissipation at 2 5 ° C . . . . . . . .1 5 0 mW