TK19 Search Results

TK19J55D

Abstract: SC-65 jeita sc-65 VDD400
Contextual Info: TK19J55D MOSFET シリコンNチャネルMOS形 π-MOS TK19J55D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.28 Ω (標準) (2) 順方向伝達アドミタンスが高い。: |Yfs| = 8.5 S (標準)

tk19

Abstract: TK19A45D 25c307 K19A45D
Contextual Info: TK19A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK19A45D ○ スイッチングレギュレータ用 単位: mm z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 10 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 450V)

Contextual Info: TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK19A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

Contextual Info: TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK19A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.19 High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

TK19H50C

Abstract: tk19
Contextual Info: TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK19H50C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V)

Contextual Info: TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK19H50C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 25 Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current

Contextual Info: TK199b_1.XLS 199.3000 199.2900 199.2800 199.2700 199.2600 199.2500 -40 -30 -20 -10 10 Seite 1 20 30 40 50 60 70

TK19H50C

Abstract: tk19 2-16K1A
Contextual Info: TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK19H50C Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V)

K19A45D

Contextual Info: TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK19A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)

TCDT1121

Abstract: K1150PG K1150P rs tube TCDT1120 vishay TCDT1121 et1100 tk19 vishay 43
Contextual Info: VISHAY Vishay Telefunken ▼ Packing and Marking Informations P a rt N u m b e r I" MOQ* pea p e r TUbe lU t o S p M . R g u r^ C o n s titu e n ts (F ig u ra 4N25 3000 60 45 42 4N25G V 3000 60 45 42 4N25V 3000 60 45 42 4N26 3000 60 45 42 4N27 3000 60 45

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

fast tlp785

Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W

Telefunken tk19

Abstract: tk19 CNY66 Vishay Diode A4
Contextual Info: CNY64/ CNY65/ CNY66 Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: TK19 IR receiver ir tk19 tk19 tk19 335 tk19 200 receiver tk19 infrared VISHAY tk19 CNY64 CNY66
Contextual Info: CNY64/ CNY65/ CNY66 Vishay Semiconductors Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: ir tk19 LR26550 tk19 ir 8 pin SMD relay TK1L25 tk19 Diode smd 417
Contextual Info: ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY 10.6 .417 TK-RELAYS UL File No.: E43149 CSA File No.: LR26550 9.0 .354 4.0 .157 • Low profile 4 mm .157 inch height • High contact capacity: 2 A • Surge withstand voltage between contact and coil: 2,500 V Bellcore rating

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

tk19 405

Abstract: tk19 tk19 200 TK1-12V tk124
Contextual Info: TK TESTING ULTRA LOW PROFILE 2 A POLARIZED RELAY 10.6 .417 TK RELAYS FEATURES 9.0 .354 • Low profile 4 mm .157 inch height • High contact capacity: 2 A • Surge withstand voltage between contact and coil: 2,500 V Telcordia 4.0 .157 mm inch SPECIFICATIONS

tcdt1121

Abstract: K1150PG Telefunken tk19 tk19 tcdt1121g VISHAY tk19 tfk 918 et1100 TFK CNY65 4N25 TFK
Contextual Info: Vishay Telefunken Packing and Marking Informations Part Number 4N25 4N25GV 4N25V 4N26 4N27 4N28 4N32 4N33V 4N33 4N35 4N35GV 4N35V 4N36 4N37 CNY17–1 CNY17–2 CNY17–3 CNY17–4 CNY17G–1 CNY17G–2 CNY17G–3 CNY17G–4 CNY64 CNY64A CNY64B CNY65 CNY65A

tk19 infrared

Abstract: TK19 IR receiver ir tk19 Telefunken tk19 tk19 CNY65 CNY65A tk19 001 CNY66 Optocoupler 601
Contextual Info: CNY64/ CNY65/ CNY66 Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

tk19 infrared

Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理

80N20

Contextual Info: Preliminary Technical Information Extended FBSOA Power MOSFET IXTH1910 IXTT1910 TK1910 VDSS ID25 = 200V = 80A Ω ≤ 28mΩ RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C