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    K19A45D Search Results

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    K19A45D Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK19A45D(STA4,Q,M)

    MOSFET N-CH 450V 19A TO220SIS
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    DigiKey TK19A45D(STA4,Q,M) Tube 18 1
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    Avnet Americas TK19A45D(STA4,Q,M) Tube 16 Weeks 50
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    Mouser Electronics TK19A45D(STA4,Q,M) 93
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    K19A45D Datasheets Context Search

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    tk19

    Abstract: TK19A45D 25c307 K19A45D
    Contextual Info: K19A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K19A45D ○ スイッチングレギュレータ用 単位: mm z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 10 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 450V)


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    TK19A45D tk19 TK19A45D 25c307 K19A45D PDF

    Contextual Info: K19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K19A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original
    TK19A45D PDF

    Contextual Info: K19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K19A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.19 High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original
    TK19A45D PDF

    K19A45D

    Contextual Info: K19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K19A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original
    TK19A45D 13controlled K19A45D PDF