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Toshiba America Electronic Components


Toshiba America Electronic Components TK19A45D(STA4,Q,M) - Rail/Tube (Alt: TK19A45D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK19A45D(STA4,Q,M)	Tube		16 Weeks	50	1 - 10 - 100 $2.28 1000 $1.85 10000 $1.85	Buy Now

K19A45D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
tk19 Abstract: TK19A45D 25c307 K19A45D Contextual Info: K19A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K19A45D ○ スイッチングレギュレータ用単位: mm z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 10 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 450V)	Original	tk19a45d tk19 25c307 k19a45d	PDF
Contextual Info: K19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K19A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)	Original	tk19a45d	PDF
Contextual Info: K19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K19A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.19 High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)	Original	tk19a45d	PDF
K19A45D Contextual Info: K19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K19A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)	Original	tk19a45d 13controlled k19a45d	PDF