0DD4FL03 Search Results

Transistor 2TY

Abstract: PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor
Contextual Info: CNX21 ÖUALITY TECHNOLOGIES CORP S7E » • 74bbflSl 0004527 042 ■ ÛTY T ^ H t- HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo­ transistor. The base is not accessible. Features of this product:

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

Contextual Info: Philips Semiconductors Product specification 7 Heavy duty optocouplers 2UALITY T E C H N O L O G I E S C0 RP CNW11AV-1/2/3 S7E D 74bbfi51 0 0 G 4 4 b 4 03T « f i T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a

Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.

Contextual Info: Philips Sem iconductors Product specification High voltage optocouplers flUALITY T E C H N O L O G I E S CORP SL5582W/SL5583W S7E D • 7 4 b b A5 1 0 D O 4 74 1 EflH ■ f l T Y FEATURES • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm

Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers ÖUALITY tec h n o lo g ie s corp CNX82A/CNX83A S7E T> TMbbôSl OOOMbOS bS3 «fiTY FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable for use with

sot212

Abstract: Quality Technologies optocouplers 2ty transistor
Contextual Info: P h ilip s S em Product specification GaAIAs high-voltage optocouplers 2UALITY TECHNOLOGIES CORP CNG82/CNG83 S7E 1> • 74t.bfiSl 0 0 0 4 4 3 e T s 5 T " S 7 t Y FEATURES • High output/input current

453 optocoupler

Contextual Info: Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers 3UALITY T E C H N O L O G I E S CORP 57E D 7Mbbfl51 O O Q M S q Q OGI • ( 3 T Y FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

453 optocoupler

Abstract: Transistor 2TY SOT230
Contextual Info: Product specification Philips Semiconductors CNX62A High-voltage optocoupler 3UALITY TECHNOLOGIES CORP 57E D 74bb051 0004570 S04 • Ö T V FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits

CBC 184 transistor

Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Contextual Info: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.

Contextual Info: Product specification Philips Semiconductors Wide body, high isolation/high-gain optocouplers flUALITY TECHNOLOGIES CORP CNW 138/CNW 139 57E J> 7Mbt3fl51 0004512 bll • ö T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

Contextual Info: Philips Semiconductors Product specification Heavy duty optocouplers CNW84/CNW85 D U A L IT Y T E C H N O L O G I E S CORP S7E D 7HbbflSl DGD44flb 7TT • Ö T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body DIL encapsulation

Contextual Info: ÖUALITY TECHNOLOGIES CORP S7E D • MCA230 MCA231 MCA255 7MbböSl OaOMbM? fill ■ Ö T V OPTOCOUPLERS i— _ J \ Optically coupled isolators consisting of an infrared emitting GaAs diode and an npn silicon photo-Darlington transistor. Features o f these products:

Contextual Info: Philips Semiconductors _Product specification T -*i I — Wide body, high isolation, high-speed optocouplers CNW135/CNW136/CNW4502 ÛU ALI TY T E C H N O L O G I E S CORP FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Transistor 2TY

Abstract: .2ty transistor npn
Contextual Info: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.

PHILIPS CNW82

Abstract: Quality Technologies optocouplers
Contextual Info: Philips Semiconductors Product specification Wide body, high isolation optocouplers CNW82/CNW83 2UALITY T E C H N O L O G I E S CORP S7E D 7 4 bb ôS l D D D 4 4 7 3 D41 M A T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm « Minimum creepage distance

Transistor 2TY

Abstract: 2ty transistor Transistor+2TY .2ty transistor npn .2ty transistor
Contextual Info: SL5504 ÛUALITY TECHNOLOGIES CORP 57E T> 7Mbbô51 □ÜDM?Db 1ÛT IÛTY OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.

Contextual Info: Philips Sem iconductors Product specification 7 H V D U A L I T Y T E C H N O L O G I E S C0 RP S7E D 74fc>bfl51 000472*1 7fi7 • 3 T Y FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm

bt 44a

Abstract: Transistor 2TY npn photo transistor P042A
Contextual Info: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life

Transistor 2TY

Contextual Info: H11B255 D U A L IT Y T E C H N O L O G I E S CORP S7E ]> 74t.bflSl O O D M bM l 3T3 OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • High maximum output voltage

Transistor 2TY

Contextual Info: I I ÛUA LIT Y T E C H N O L O G I E S CORP 57E D 74bbflSl 0 0 0 M S S 2 5TÔ • û T Y A « CNX38U 7 = ^ OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.

CNR50

Abstract: SOT230 BS415 BS7002 TDA8385 UBB180 351 8pin dil 2ty transistor
Contextual Info: Product specification Philips Semiconductors 7 Dedicated IC-optocoupler CNR50 flUALITY T E C H N O L O G I E S CORP S 7E B M Bp, 7 U U 5 1 OD O m tu t. D 13 _ FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation