SOT90B Search Results

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

bt 44a

Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Contextual Info: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Transistor 3TY

Contextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life

Contextual Info: CNG35 CNG36 JV GaAIAs OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed for low input current and long life operation. The application o f an IR emitting diode, based on a special GaAIAs intrinsic process results in a

HD H101

Abstract: CNG36 CNG35 SOT-90B SOT90B
Contextual Info: CNG35 CNG36 T O GaAIAs OPTOCOUPLERS O ptica lly coupled isolators consisting o f an infrared em itting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life operation. The application o f an IR em ittin g diode, based on a special GaAIAs intrinsic process results in a

bt 44a

Abstract: Transistor 2TY npn photo transistor P042A
Contextual Info: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

optocoupler 357

Contextual Info: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio

Contextual Info: MCT26 *1 OPTOCOUPLER A Optocoupler in a Dl L plastic envelope. The M CT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under U L component recognition F IL E E 90700 V D E — Approved according to V D E 0883/6.80 Reference voltage V D E 0 1 10b Tab 4 : A C 380 V/DC 450 V — isolation group C

Contextual Info: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC

Contextual Info: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage

L1102

Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
Contextual Info: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage

MCA231

Abstract: MCA265 MCA230 MCA255 OPTOCOUPLER dc 231 transistor opto isolators
Contextual Info: MCA230 MCA231 MCA255 OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting GaAs diode and an npn silicon photo-D arlington transistor. Features o f these products: • • • • High o u tp u t/in p u t DC current transfer ratio

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

Contextual Info: Philips Semiconductors Product specification 7- H t - r j Optocouplers ÛUA L IT Y T E C H N O L O G I E S CNY17-1 to 4/CNY17F-1 to 4 CORP S7E D 74bbasi OOQMblM • Fast switching STANDARD REFERENCE • Low saturation voltage UL note 1 • High maximum output voltage

Contextual Info: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.

Contextual Info: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio

CBC 184 transistor

Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Contextual Info: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.

SOT-90B

Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
Contextual Info: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features

212 optocoupler

Abstract: Optocoupler le 25 CNX48U
Contextual Info: CNX48U OPTOCOUPLER W /& O pto-isolator comprising an infrared em itting GaAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in line D IL envelope. Features • V ery high o u tp u t/in p u t DC current transfer ratio

Contextual Info: 4N29 4N30 4N31 4N32 4N33 OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in-line DIL envelope. Features • Very high output/input DC current transfer ratio

Contextual Info: [[ N AMER PHILIPS/DISCRETE 25E D bb53T31 0021025 0 • CNX71 T - 4 - I - ^ 3 H IG H -V O L T A G E O P T O C O U P L E R The CNX71 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.