CNX36 Search Results

PHILIPS CNX36

Abstract: optocoupler cnx36 cnx36 CNX35 PHILIPS CNX35 CNX35U CNX36U CNX39 CNX39U T-41-83
Contextual Info: CNX35 CNX36 CNX39 •I bbS3T31 005QT15 k N AÏ1ER PHILIPS/DISCRETE SSE D T ~ H \ ~ 8 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

Contextual Info: European "Pro Electron" Registered Types _ CNX35, CNX36 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Phototransistor T he CNX35 and CNX36 are gallium arsenide, infrared em itting diodes coupled with a silicon phototransistor in a

CNX35

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 CNG35, CNG36, CNG39, CNX35, CNX36, CNX39 OPTICALLY COUPLED ISOLATORS Circuit Features Description Absolute Maximum Ratings

CNX35

Abstract: CNX36
Contextual Info: G E SOLID STATE 01 Optoelectronic Specifications. DE|3ñ75Dfli □□nasa a |~~ '- 4 I- 8 3 Photon Coupled Isolator CNX35, CNX36 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State CNX35 and CNX 36 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor

QT OPTOELECTRONICS cny17-2

Contextual Info: OPTOELECTRONICS OPTOCOUPLERS P h o t o t r a n s is t o r O u t p u t ; G a A s In p u t CTR Part Number ANODE[Î e] BASE CATHODE[2 1i N/C¡3 Ji 5] COLLECTOR 1 3 EMITTER 4N25 4N26 4N27 4N28 4N35 4N36 4N37 CNW11AV-1 CNW11AV-2 CNW11AV-3 CNW83 CNW85 CNX35U CNX36U

MOC7811 optocoupler

Abstract: MOC7811 QTC 4N35 working of MOC7811 QTC 4N25 OMRON 1230 opto moc7811 speed sensor NEC PS2001B MOC7811 PIN DETAILS MOC7811 pin diagram with smoke detector
Contextual Info: Optocouplers Data Book 1996 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

M0C3011

Abstract: H74AI h11m BPW3 H1IJ H11M4 photo darlington L14F2 HIIAAI M0C3010 MC726
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS j ß /> * ff /' //* * ,y / TYPE NO. PAGE NO. MIN. PQ @ lF = 100mA MAX. VF@ lp= 100«iA PEAK EMISSION WAVELENGTH TYP. n METERS RISE TIME TYP. mSEC FALL TIME TYP./zSEC MAX. PD mW MAX. If CONT.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Contextual Info: 6 Leaded Devices Maximum die size 60 mil x 60 mil “S” option = CASE 730C-04 “F” option = CASE 730F-04 Optoisolators Transistor Output Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emltter, 5-Collector, 6-Base Style 1 Current Transfer Ratio (CTR) c mA VCC

H11A1M

Abstract: opto 4n25
Contextual Info: Schematics and Specifications 6-Pin Package ANODE 1 CATHODE 2 NC 3 Phototransistor Output; DC Sensing Input 6 BASE 5 COLLECTOR 4 EMITTER Part Number CTR @ 10 mA IF % min max BVCEO (V) min BVCBO (V) min BVECO (V) min tON/tOFF (µs) max 4N25 5.3 20 — 30

Optocouplers QTC

Abstract: moc641a optokoppler MOC633A "vergleichsliste" PC618 moc635a vergleichsliste QTC H11AA1 PC627
Contextual Info: Optokoppler Optocouplers Vergleichsliste Cross reference Diese Liste erhebt keinen Anspruch auf Vollständigkeit, im Einzelfall bitte die entsprechenden Datenblätter vergleichen. (This list does not claim being complete, therefore, please compare each individual case with the appropriate

MCT2E soic

Abstract: hma121 H11AG3 moc3041 MOC3051 MOC3043 equivalent MOC3051-M MOC3041-M MOC256-M moc3041 application note
Contextual Info: Optoelectronics Products Optocouplers 4-Pin DIP Part Number Forward Voltage VF V CTR @ 1mA IF (%) Min Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V) 1 Minute 7500 35 6 300 / 250 5300 Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V)

hMA121

Abstract: 74OL6000 h11ag3 MCT2E-M 4 pin phototransistor 8 pin 4N37 data sheet book h11f1 pin mct2e 8 pin MOC3043 equivalent MOC3083
Contextual Info: Index to Packages and Safety Agency Certification www.fairchildsemi.com • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

C8050 equivalent

Abstract: cny21 equivalent S13MD1 SHF600-1 moc641 QCPL-4502 CNY17-1Z PS2016 CNY17-3Z K8031P
Contextual Info: 10. Cross Reference The fo llo w in g C ross-R eference is m ea nt to serve as a guide fo r existing com p etitive devices to T oshiba's ph o to co u p le r pro du ct line. Toshiba's nearest equivalent devices are selected on th e basis o f general sim ila rity

LTV702VA

Abstract: NEC ps2401 4N37 "cross reference" 4N35 cny17 LTV702VB LTV702VC QTC 4N35 PS2401-1 PC703VB QTC CNY17-2
Contextual Info: Cross Reference Guide TOSHIBA Part No. SHARP Part No. QTC Part No. KODENSHI NEC Part No. Part No. 4N25PS2001 4N25 PS2021 PS2021 - LTV4N25 PC4N25 4N25 4N25 4N25 4N25 4N25 LTV4N26 LTV4N27 LTV4N28 LTV4N35 LTV4N37 PC4N26 PC4N27 PC4N28 PC4N35 PC4N37 4N26 4N27 4N28

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

dual channel opto triac

Abstract: SL5504 CNX82A.W CNX48 MOC3052M
Contextual Info: Index 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22

h11cx

Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Contextual Info: Date Created: 1/27/2004 Date Issued: 2/24/2004 PCN # 20034307-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.