LLS3T31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE OLE D LLS3T31 ooman MAINTENANCE TYPE 4 LAE4000Q for new design use LAE4001R r-i)-a3 M IC R O W A V E LIN EA R PO W ER T R A N S IS T O R NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

Contextual Info: LLS3T31 DOlSbll S DEVELOPMENT DATA BCV64 This data sheet contains advance information and specifications are subject to change without notice. N ANER PHILIPS/DISCRETE DbE D SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.

Contextual Info: OLE D N AMER PHILIPS/DISCRETE D E V E L O P M E N T DATA' • LLS3T31 0D132T2 5 U ■ T h ii data sheet contains advance Information and specif Icatlons are subject to change without notice. BGY93A BGY93B BGY93C , y d v _ _ _ _ T''7H~Oc '- 0 K

Contextual Info: . N AflER PHIL IPS /DI SCRE TE 2SE D ! , LLS3T31 0032415 7 • DEVELOPMENT DATA BYR28 SERIES This data sheet contains advance information and specifications are subject to change without notice. , [ T -G Z -iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

BB135

Contextual Info: LLS3T31 Philips Semiconductors DD2b3Tl HM7 MB A P X Preliminary specification BB135 UHF variable capacitance diode N AMER PHILIPS/DISCRETE b'lE D Q U IC K R E F E R E N C E DATA DESCRIPTION The BB135 is a silicon, double-implanted variable capacitance diode in planar

Contextual Info: TDD D N AMER PHILIPS/DISCRETE 9 0D 1 0 1 5 8 MAINTENANCE TYPES D I L,b53T31 0010156 fi 1“ ' 3 3 - 0 7 BY261 SERIES SILICON BRIDGE RECTIFIERS Ready for use full-wave bridge rectifiers in a plastic encapsulation. The bridges are intended for use in equipment supplied from a.c. w ith r.m.s. voltages up to 420 V and

Contextual Info: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are

Contextual Info: bb53c!31 0015^62 b BCX51 BCX52 BCX53 QbE D N AMER PHILIPS/DISCRETE 7V r- 2^-23 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

Contextual Info: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for

BUZ357

Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 1^53=131 QDia?t7 7 • DEVELOPMENT DATA II This data sheet contains advance information and specifications are subject to change without notice. BUS131 SERIES N AUER P H I L I P S /DISCRETE T 25E D - 3 3 - / 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast

BYX10G

Abstract: 0032T
Contextual Info: BYX10G _ RECTIFIER DIODE D ouble-diffused glass-passivated rec tifie r diode in h e rm etically sealed axial-leaded glass envelope, intended fo r use in general industrial applications w here a high repetitive peak reverse voltage is required.

SOT-90B

Abstract: CNY17-1 17F-2 17-F1 Y17F CNY17 CNY17F CNY17F-1 17F-3 17-F4
Contextual Info: P h ilip s Sem icon du ctor« P rodu ct specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPRO VALS FEATURES • Fast switching S TA N D A R D • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with V D E 0883/6.80

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AUER PHILIPS/DISCRETE bTE D bb53T31 DQE7T15 Til APX BSX32 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in a TO-39 encapsulation. The BSX32 is designed fo r use in high current switching applications. QUICK REFERENCE DATA

bot64

Abstract: BDT65A BDT64 BDT65C BDT64B BDT65B DT6-4 64a diode BOT65
Contextual Info: BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P N P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T O -220 plastic envelope. N PN complements are BOT65,

optocoupler 4N25 VDE

Abstract: a4n25 4N25 A4N25A 4N25A 4N26 4N27 4N28 sot90b optocoupler 4n25
Contextual Info: 4N25 4N25A 4N26 4N27 4N28 TO Æ J OPTOCOUPLERS V- T h is p ro d u c t range is o n e o f th e indu strial standards ap plied in th e m arket. T he current transfer ratio, iso la tio n voltage and lo w saturation voltage c o m p ly w ith th e sp e cifica tio n s o f th e m ain part o f the

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

buz36

Contextual Info: PowerMOS transistor_ BUZ36 N AMER PHILIPS/DISCRETE DbE D • t.bS3T31 0014bab E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BGY45B

Contextual Info: N AtlER PH IL I P S / D I S C R E T E i 860 8 1034 ObFT • bbS3^3l" O O l ^ s " T DT ‘-7 * y ^ o f-C > / BGY45B _/ V V.H.F. BROADBAND POWER MODULE V.H.F. broadband power amplifier module prim arily designed for mobile communications equipment,

Contextual Info: N AMER PHILIPS/DISCRETE HSE D bb53T31 QDEiaib METAL OXIDE VARISTORS _ i z . ~ i Zinc Oxide Voltage Dependent Resistor U.L. File #E98144 VDE File #14480-4790-1001/A1F DESCRIPTION GENERAL V oltage D(ependent) R(esistor)-varistors-have

TAG 9109

Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331
Contextual Info: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure

m2303

Abstract: 8y22 BY229F IEC134 rivet SSC 08382
Contextual Info: N A M ER PHILIPS/DISCRETE ESE D • btSBTBl 0QS23DS D ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for