BYR28 Search Results

DIODE FAST S2L

Abstract: DIODE s2l M3308 M3306 BYR28 DIODE s2l 37
Contextual Info: I I N AflER P H IL IP S / D IS C R E T E 2SE D fabS3131 □G 2241S DEVELOPMENT DATA 7 B i BYR28 SERIES T h is d a ta sheet co n ta in s advance in fo rm a tio n and sp e c ific a tio n s are su b je ct to change w it h o u t n o tic e . T - Ö 3 ~ iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

M3318

Contextual Info: DEVELOPMENT DATA BYR28 SERIES T h is d ata sheet co n ta in s advance in fo rm a tio n and s p e c ific a tio n s are su b je ct to change w it h o u t n o tic e . y v ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

Contextual Info: . N AflER PHIL IPS /DI SCRE TE 2SE D ! , LLS3T31 0032415 7 • DEVELOPMENT DATA BYR28 SERIES This data sheet contains advance information and specifications are subject to change without notice. , [ T -G Z -iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

M3306

Abstract: m3304 Ultra Fast Recovery Double Rectifier Diodes BYR28 TO-220 3 lead bend BYR28-500 D0412
Contextual Info: 5bE D • 71 10 ß 2b DG m aa Q D E V E LO P M EN T DATA IPHIN TbT BYR28 SERIES T h is data sheet contains advance inform ation and specificatio ns are sub ject to change w ith o u t no tice. PH ILIPS INTERNATIONAL T - 0 - 3 - 1 7 Sb E D ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

M330B

Abstract: M3316 BYR28 M3315 T-031
Contextual Info: 5bE D • IPHIN 711QÛ2b G a m s a o TbT DEVELOPMENT DATÄ BYR28 SERIES T his data sheet contains advance information and T -03-/7 specifications are subject to change w ithout notice. PHILIPS INTERNATIONAL 5bE ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward

M3306

Abstract: BYR28 M3308 g0524 ultra fast recovery diode trr
Contextual Info: I I N AflER P H I L I P S / D I S C R E T E 2SE D • bbS3 T3 1 DQSE41S 7 ■ DEVELOPMENT DATA BYR28 SERIES T h is d ata sheet c o n ta in s a dvance in fo r m a t io n and sp e cific atio n s are subject to change w it h o u t notice. T -0 3 -iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

Contextual Info: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

BYR210

Abstract: BYR28 BYR29 PBYR2100CT PBYR280CT PBYR290CT
Contextual Info: N AUER P H I L I P S / D I S C R E T E tiTE » bbS3T31 0027G77 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Double diode in SMD power package • Low turn-on and high breakdown voltage I APX TED PBYR2100CT series QUICK REFERENCE DATA

smd diode schottky code marking 63

Abstract: BYR210 BYR29 smd diode schottky code marking 1A BYR28 PBYR2100CT PBYR280CT PBYR290CT smd diode schottky code marking 37 Philips marking code sot223
Contextual Info: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES PBYR2100CT series PINNING • Low switching losses MARKING DESCRIPTION PIN TYPE NUMBER MARKING CODE • High breakdown voltage 1 anode a-0 • Fast recovery time 2 common cathode

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

pby 345

Abstract: BYW93 pbyr BYX56 56360A BYW31
Contextual Info: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

BYR210

Abstract: schottky barrier double diode BYR28 BYR29 PBYR2100CT PBYR280CT PBYR290CT byr21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBYR2100CT series Schottky barrier double diodes Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification

BYR210

Abstract: BYR28 BYR29 PBYR2100CT PBYR280CT PBYR290CT SMD MARKING CODE M 4 Diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBYR2100CT series Schottky barrier double diodes Product specification Supersedes data of 1996 May 03 File under Discrete Semiconductors, SC01 1996 Oct 14 Philips Semiconductors Product specification Schottky barrier double diodes

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817