BYX56 Search Results

Byx56 1500

Abstract: BYX56-1400R BYX56-600 BYX56 BYX56/600 BYX56-1400 BYX56-600R IEC134 T0119
Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE BSE D ^53=131 Q0S5Ô41 5 B BYX56 SERIES 7 ^ 0 1 -1 9 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.

Contextual Info: NA U E RP H IL IP S /D IS C R E T E M A IN T E N A N C E T Y P E B S ED b f c > 5 3 T 3 1Q E E & 4 1 B0 BYX56 SERIES 7 ^ 0 1 -1 9 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power

BYX56-1400R

Abstract: BYX56-600R BYX56-600 Byx56 1500 BYX56 BYX56-1400 IEC134
Contextual Info: N AMER P H I L I P S / D I S C R E T E MAINTENANCE TYPE 5SE D ^53=131 oosaam 5 a A BYX56 SERIES 7 ^o /- /9 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.

BYX56

Abstract: BYX56-600 BYX56 Series
Contextual Info: MAINTENANCE TYPE BYX56 SERIES yV CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX56—600 to BV X 56—1400.

BYX56-600

Abstract: Byx56 1500 t0711 BYX56-600R BYX56 BYX56-1400 BYX56-1400R IEC134 BYX56/BYX56-600R
Contextual Info: BYX56 SERIES M AIN TEN AN C E TYPE SbE D - PHILIPS INTERNATIONAL • 7110A2b 0041b4b STT ■ PHIN T -0 7 -1 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended for power rectifier applications.

Contextual Info: BYX56 SERIES M A INTENANCE TYPE - PHILIPS INTERNATIONAL SbE D • 711Dû2t. □ □41t.4b STT ■ PHIN T z p r-n CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

pby 345

Abstract: BYW93 pbyr BYX56 56360A BYW31
Contextual Info: INDEX _y v. Type No. Page 43 55 65 69 81 BYV92 series B Y V 1 18 series BYV118F series B Y V 120 series BYV121 series 461 469 479 483 491 BY229 series BY229F series BY249 series BY249F series BY329 series 93 105 117 123 131 BYV133 series BYV133F series BYV143 series

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any