MA44951
Abstract: MA44952 MA44953 MA44954 MA44955 MA44956 MA44957 MA44958 MA44959 ty 617 equivalent
Contextual Info: sym M/A-COM SEMICONDiBRLNGTON 11 D 5b422m DDQlMDfl =1 « M I C T-07-11 MA44950 Series Silicon Multichip Pulsed Multiplier Varactors Features • PEAK OUTPUT POWER TO 150 WATTS ■ SIMPLE CIRCUITS ■ PARTS CAN BE SCREENED TO MILITARY SPECIFICATIONS OR JANTX, TXV ÉQUIVALENT
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ma44950mil-std-750ma44951ma44952+8ma44953ma44954ma44955ma44956ma44957ma44958ma44959ty 617 equivalent
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MCP67MV
Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13
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16mx16page42page17page18+16667mhzpage11g3-64page40mcp67mdpage24mcp67mvrts5117mcp67mv- a212vsusit8511ted1703d1804d1803asusf9dc
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CP32P
Contextual Info: LORAL NICROtilAVE-FSI SIE D • 5530130 QQDD4L.D 155 HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The G C3200 series o f harm onic ge nera to r varactors uses a single epitaxial silicon die. Strict material and process controls result in h igh reproducibility. A unique silicon dioxide passiva
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GC3300
Abstract: GC3307 gc3306 GC3305
Contextual Info: LORAL Î1ICROUAVE-FS I SIE D • T-07-11 5 5 0 0 13 0 O O O G M b E T2fl HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The GC3300 Series of Multiplier Varactors offer high break down voltage, lower transition time and lower capacitances than available with GC3200 Series. This is accomplished by
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000g4b2t-07-11gc3300gc3200+5gc-3300-90-rmgc3307gc3306gc3305
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Gunn Diode MA49156
Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
Contextual Info: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO
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5b4e514ma49000sbm2s14dgd1424+10t-07-11gunn diode ma49156ma4915624 ghz microwave doppler radar speed sensorma49172ma49508gunn diode at power supply circuitpolice radar detectorx-band varactor diodema49159
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Contextual Info: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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byx25711dfl2bbyx25--600byx25--1400+8byx25--600rbyx25--1400r10-32unf711dflstibyx25-600diode byx25 600byx25-600rbyx25-1400
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bourns 10k ohm trimpot
Abstract: 3 pins trimmer resistor 10K ohm trimmer 10k 10k trimmer potentiometer resistors 100 ohm 2 watt rheostat application of ohmmeter
Contextual Info: Trimming Potentiometer Application Note Effects of Setting the Wiper at End Set on Cermet Resistors By Anna Melissa Tiangco Bourns Trimpot® Division, Application Engineer Introduction Bourns® trimming potentiometers are designed and tested to operate under extreme conditions.
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e/t0711bourns 10k ohm trimpot3 pins trimmer resistor 10k ohmtrimmer 10k+310k trimmer potentiometer resistors100 ohm 2 watt rheostatapplication of ohmmeter
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varactor diode capacitance measurement
Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Contextual Info: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY
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t-07-11ma48700varactor diode capacitance measurementimpatt diode+7gunn diodegaas gunn diode "94 ghzradar gunn diodegaas gunn diodeimpattvaractor diode high frequency ghzgunn diode e band
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PH 21 DIODE
Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Contextual Info: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o
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plva400ado-35plva459aplva456a+9plva450aplva453a250mamla423ph 21 diodedd40plva462aplva465aplva468a
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1N4387
Abstract: 1N4386 1N5154 1N5150 1N5151 1N5150-5157 1N5155 1N4388 1N5149 1N5150A
Contextual Info: M/A-con s e u i c o n d t Br lngto n h d A$ m 5b42214 QGQlB'iL. h • MIC T-07-11 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features ■ HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are
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5b422141n4386-881n5150-5157twxt-07-11+91n43871n43861n51541n51501n51511n51551n43881n51491n5150a
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4832
Abstract: steward catalog 503 911 35T0155-10P steward 248-6 LS 2027 MLT 22 721 permeability 38T0155-10P T0155-00P
Contextual Info: STEWARD TOROIDS Table Of Contents Steward & Quality Assurance. 3 Quality Philosophy. 3
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4832steward catalog503 91135t0155-10p+6steward 248-6ls 2027mlt 22 721permeability38t0155-10pt0155-00p
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MA44600
Abstract: SRD diode MA4B300 MA43000 MA43543 MA43592 MA44750 MA43002-91 step recovery diodes MA44632A30
Contextual Info: M/A-COM SEMICONDiBRLNGTON 11 D m SbMSSlM GGD137b □ • M I C _ 7 ^ 0 7 -// MA44600 Series Step Recovery Diodes Features ■ LOW TRANSITION TIMES ■ TIGHT CAPACITANCE RANGES ■ HIGH VOLTAGE AND LOW THERMAL RESISTANCE FOR HIGHER INPUT POWER Applications
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sbm52mddd137bma44600srd diode+8ma4b300ma43000ma43543ma43592ma44750ma43002-91step recovery diodesma44632a30
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5082-0253
Abstract: step recovery diodes 5082-0885 5082-0830 5082-0320
Contextual Info: HEWLETT-PACKARDn CMPNTS 2GE D B 4M475Ö4 DÜQSÔOS E3 5082-0132 5082-0241 5082-0253 5082-0300 5082-0310 5082-0320 5082-0335 5082-0800 CERAMIC PACKAGED STEP RECOVERY DIODES 1 H EW LETT W !¿J P A C K A R D t 5082-0805 5082-0810 5082-0820 5082-0821 5082-0830
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4m4755082-0253step recovery diodes5082-0885+25082-08305082-0320
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MA44700
Abstract: GG013 gg01
Contextual Info: n/A- CO M S E M I C O N D n B R L N G T O N 11 D • SbMSSm 00013^2 T ■MIC 6 ~?~ ( MA44700A Series Stackpack & Super Stackpack™ Multiplier Diodes Features ■ HIGH REVERSE VOLTAGE ■ LOW TRANSITION TIME ■ LOW CAPACITANCE ■ LOW THERMAL RESISTANCE
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sbt22mgg013ma44700at-07-11+2ma44700gg01
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BYX25-600
Abstract: BYX25 BYX25-600R diode BYX25 600 IR 0711 RECTIFIER DIODES PHILIPS BYX25 BYX25-1400 BYX25-1400R IEC134
Contextual Info: BYX25 SERIES “ SbE D PHILIPS INTERNATIONAL • 711DflSb □ □ m S T b S4M ■ PHIN T-07-H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable o f absorbing transients and intended fo r power rectifie r applications. The series consists o f the follow ing types:
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byx25711dflsbt-07-hbyx25-600+8byx25-1400byx25-600rbyx25-1400rbyx25-diode byx25 600ir 0711rectifier diodes philips byx25iec134
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HP 5082-0180
Abstract: HP 5082-0113 5082-0833 hp 5082-0151 5082-0840 5082-0815 5082-0151 5082-0153 5082-0825 5082-0114
Contextual Info: HEWLETT-PACKARD i CMPNTS fT Y T l H E W W P A C K A R D !ÍL j L E T T 20E D E3 4447SÖ4 DGOSñOS CLASS PACKAGED STEP RECOVERY DIODES 5082-0112 5082-0113 5082-0114 5082-0151 5082-0153 5082-0180 El 5082-0803 5082-0815 5082-0825 5082-0833 5082-0840 Features
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4447s80s2ahp 5082-0180hp 5082-0113+85082-0833hp 5082-01515082-08405082-08155082-01515082-01535082-08255082-0114
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asus k53
Abstract: Asus k53 motherboard AR8131-AL1E RT8015BGQW ASUS P5 MOTHERBOARD CIRCUIT diagram asus crb input voltage point IT8301E R5U230 ar8121 RT8206A
Contextual Info: 5 4 3 2 1 SYSTEM PAGE REF. D C B A 01. Block Diagram 02. System Setting 03. CPU 1 _DMI,PEG,FDI,CLK,MISC 04. CPU(2)_DDR3 05. CPU(3)_CFG,RSVD,GND 06. CPU(4)_PWR 07. CPU(5)_XDP 16. DDR3(1)_SO-DIMM0 17. DDR3(2)_SO-DIMM1 18. DDR3(3)_CA/DQ Voltage 19. VID Controller
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ics9lpr362it8512ar8131alc663vd+14fm2010r5u230200ms110ms100usasus k53asus k53 motherboardar8131-al1ert8015bgqwasus p5 motherboard circuit diagramasus crb input voltage pointit8301ear8121rt8206a
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