4447S Search Results

24so2

Abstract: HSCH9201
Contextual Info: H E W L E T T - P A C K A R D n C M PN TS HEW LETT 'Í2J P A C K A R D SGE D 4447SÖ4 Q0D5bS3 G HSCH-9101 HSCH-9201 HSCH-9251 TXVW-9101 TXVW-9201 TXVW-9251 GaAS BEAM LEAD SCHOTTKY BARRIER DIODES Features GOLD TRI-METAL SYSTEM For Improved Reliability 2S0m.QE

Contextual Info: HEW LE T T —P A C K A R D / CHPNTS b lE 4447SÖ4 D Q dC H lE I T Ï4 HPA Tfwl HEW LETT mi!HM PACKARD High Speed Optocouplers Technical Data CNW135 CNW136 CNW4502 CNW4503 io b m A pplications • High Voltage Insulation • Video Signal Isolation • Feedback Element in

HPAC-100X

Abstract: HPMA-2100 monolithic amplifiers
Contextual Info: HEWLETT-PACKARD-. CMPNTS 2GE D □ 4447SÛ4 m GOOSTEt 7 HEW LETT PACKARD Silicon Bipolar Monolithic Am plifiers Technical Data HPMA-2100 HPMA-2135 Features CHIP OUTLINE HPMA-2100 HPMA-2100 • 3 dB Bandwidth: DC to 0.6 GHz ■ 20.5 dB Gain at 1 GHz ■ Unconditionally Stable

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE T> • WL^m HEW LETT ml'HM PACKARD 4447SflL4 DOlDGflh 4SI ■ H P A MSA-0500 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features Chip Outline^ • Cascadable 50 £2 Gain Block • High Output Power: +23 dBm typical P1dB at

hp 5082 2711

Abstract: 5082-2711
Contextual Info: HEWLETT-PACKARD i fT A J l tx x L l H 50E C MP N T S E W D E3 4447SÔ4 DOOSt . 53 T 6082-2273/74 5082-2295-98 5082-2350/51 5082-2400/01 5082-2520/21/05/66 5082-2701/02/06/07 5082-2711-14/23-24 5082-2817/18 SCHOTTKY BARRIER DIODES FOR MIXERS AND DETECTORS L E T T

Contextual Info: HEWLETT-PACKARD/ C MP N T S blE » • 4447SA4 GD1 GGGD 77G M r '« H E W L E T T IAM-81018 1 ^ 1 PACKARD Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp HHPA 180 mil Package Features 8 dB RF-IF Conversion Gain From 0.05 - 5 GHz IF Output From DC to 1 GHz

5082-7101

Abstract: TC 5082 P 5082-7100
Contextual Info: HEWLETT-PACKARD n CtlPNTS m EOE H EW LETT PACKARD D • 4447SÔ4 000^503 LED SOLID STATE ALPHANUMERIC INDICATOR b ■ 5082-710» 5082*7101 5082-7102 " Features • • • • 5 x 7 LED M A T R IX C H A R A C T E R L A R G E 6.9 mm .27 IN CH C H A R A C T E R H EIG H T

5082-2350

Abstract: hp 2817 hpa 2350 5082-2817 5082-2200 diode hp 5082-2817
Contextual Info: Wlf^k HEWLETT 4447SÔH GGOTtiHb SB6 ^BHPA HEULETT-PACKAR] / CMPNTS D b lE PACKARD Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2350/51 5082-2400/01 5082-2702/07 5082-2723/24 5082-2817/18 D IA M E T E R 1 63 064) 1 6 2 ( 060) Features

HXTR-3625

Abstract: HXTR-3615 hxtr-3685 HXTR-3645 HXTR-3675 HSMX-3655 cabb Hewlett-Packard transistor microwave hxtr-7011 hxtr-7111
Contextual Info: HEWLETT-PACKARD 1 CMPNTS SDE I> m 4447SÖ4 QÜQSSbb 3 Q T - 3 h i* ? T-31'21 L ow N o ise T ran sistors HXTR-7011 C hip HXTR-7111, TX HXTR-3G15, TX HXTR-3645, TX HXTR-3675, TX HSMX-3635 HSMX-3655 Technical Data and and and and TXV TXV TXV TXV F eatures D escrip tion

optical encoder module

Abstract: 1R014 HEDS-9700 hp incremental optical rotary encoder raa marking code hp quadrature encoder marking Jb diode
Contextual Info: CMPNTS 34E D • 4447SÖ4 □□07DbG 3 *HPA MOTION SENSING AND ■ - CONTROL HEWLETT-PACKARD/ W hp1 H E W L E T T W HiM P A C K A R D -T - | Sm all O ptical E ncoder M odule Technical D ata HEDS-9700 S eries F e a tu re s • Sm all Size • Low Cost • M ultiple M ounting

HXTR-5103

Contextual Info: HEliJLETT-PACKARDi C MPNT S E OE D □ 4447SÔ4 OOOSS41 =1 □ K ’h n b H E W LETT HOM P A C K A R D _ ~ X '~ 1 'i~ 0 5 L inear P ow er Transistors HXTR-5001 Chip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV) Features D escription

HFBR-X41XT

Abstract: Marking code 44t HEDS-9200 marking 44t HFBR-X41X
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE T> • 4447S6M DQ08762 W hpl HEWLETT ■¿VU PACKARD 5 MBd Low Cost Fiber Optic Receiver Technical Data HFBR-24X2 Series Description The HFBR-24X2 fiber optic receiver is designed to operate with the Hewlett-Packard HFBR-14XX fiber optic

ATF-26100

Abstract: AT-10600 4sut ATF26100 ATF26100-GP3
Contextual Info: HEWLETT-PACKARD/ m CPIPNTS b lE ]> • 4447SA4 PACKARD 73b ■HPA Chip Outline Features • • • 000^32 ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET HEW LETT Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz

EDS-9100

Contextual Info: H E WL E T T - P A C K A R D / CNPNTS 34E D B 4447SÖ4 0007041!Pa ' T BHHPA H E W LE T T PA C K A R D T ^ 4 i- 7 | Two C hannel O ptical In crem ental E ncoder M odule Technical D ata HEDS-9000 HEDS-9100

Contextual Info: 2GE HEWLETT-PACKARD i CMPNTS m HEW LETT PACKARD D 4447SÖ4 JAN QUALIFIED HERMETIC SOLID STATE LAMPS* G0Db412 3 1Ñ5765 1N6Q93 JAN1N5765 JAN1N6093 JANTX1N576S JANTX1N6Q93 1N6Û92 1N6Q94 JAN1N6092 JAN1N6094 JANTX1N6092 JANTX1N6094 7~~ Y / ~ 2 -J Features • M ILITARY Q U A L IF IE D

Contextual Info: MGA-64135 2-6 GHz Cascadable GaAs MMIC Amplifier HHPA H E W LE TT PAC K AR D 31A m n ground Description 4447SB4 Cascadable 50 Gain Block Broadband Performance: 2-6 GHz 12.0 dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB • Single Supply Bias • Cost Effective Ceramic Microstrip Package

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE P HEW LETT PACKARD • 4447SÔ4 G01Q32b 72T IVA-05200 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Chip IVA-05200 Chip Outline Features • • • • • • • IHPA Differential Input and Output Capability DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates

Contextual Info: HEWLETT-PACKARDn CMPNTS 2GE D B 4447SÔ4 QDQS?2b BEAM LEAD PIN DIODE fZ Z J l H E W L E T T X '& J P A C K A R D T Q HPND-4005 HPND-4005TXV T " " 0'I'-1s~ Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical

Contextual Info: HEWLETT-PACKARD/ CNPNTS blE P HEWLETT PACKARD • 4447SÖ4 ODIOIET b?7 « H P A MSA-0900 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features Chip Outline’ • Broadband, Minimum Ripple Cascadable 50 £1 Gain Block

Contextual Info: • 4447SÔ4 0010304 ObT ■¡HPA HEWLETT-PA CKAR D/ CMPNTS blE D T fìm m L'lim H E W LE T T P a c k a rd Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HFVA-0180 Features • 3 dB Bandwidth: DC to 2.5 GHz • Temperature Compensated Bias

Contextual Info: HEWLETT-PACKARD/ CMPNTS LIE D 4447SÛ4 DDGfl74B 344 IHPA HERMETIC, NUMERIC AND HEXADECIMAL DISPLAYS FOR MILITARY APPLICATIONS HEW LETT PACKARD m HIGH EFFICIENCY RED Low P o w e r High B rightness YELLOW High P e rfo rm a n c e GREEN H D S P -0 78X /07 8X T X V /078 X T X V B

h1LJ

Abstract: ASP-0955 transistor marking code 2C
Contextual Info: HEWLETT-PACKARD/ C MP N T S blE WS3ÏÏ HP AE CWKLAERTDT D • 4447Sflii DOtmbb 2S7 HHPA ASP-0955 55 Wgttj 900 MHz Silicon Power Transistor Power Flange Features • • • • • • Power Out: 55 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz

4H47

Contextual Info: HEWLETT-PACKARD/ CMPNTS • rv blE D HEW LETT ■ 4447S64 6^2 * H P A O Q O fl'ia fl IDC-51418 MagIC Silicon Bipolar MMIC 1.5 Gb/s Decision Circuit mPPm P A C K A R D 180 mil Package Features • High Data Rates: 1.5 Gb/s NRZ • Input Sensitivity < 20 mVpp Typical

Contextual Info: HE ùl L& T T -P AC KA R D/ CMPNTS 34E D B 4447SÔ4 GG07bfi4 ñ «HPA W hnï HEWLETT w L'k M PACKARD 7=>y / ' ? / 1300 nm FDDI T ransm itter and R eceiver Technical Data Transmitter HFBR-1125 Receiver HFBR-2125 Features • Full Compliance with FDDI PMD Standard Per­