HSCH9201 Search Results

L 9101

Abstract: HSCH-9101 HSCH-9201 HSCH-9251 VF10 HSCH9201
Contextual Info: Agilent HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation HSCH-9201 Description

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: W hnt H E W L E T T WilEM PA C K A R D GaAs Schottky Diode Series Pair Tee Technical Data HS CH-9501 Features • • Low Ju nction Capacitance typically 40 fF w . fo . • Low S eries R esistan ce — typically 3 Q. • ^ Ï, 21! ■■■■ ^ Large Bond Pads Suitable

L 9101

Abstract: ups 700 HSCH-9201 HSCH-9251 VF10 HSCH-9101 Avago Technologies Schottky HSCH9201
Contextual Info: HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Description The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy MBE

HSCH9201

Contextual Info: What HEW LETT* miltm PACKARD GaAs Beam Lead Schottky Barrier D iodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency

24so2

Abstract: HSCH9201
Contextual Info: H E W L E T T - P A C K A R D n C M PN TS HEW LETT 'Í2J P A C K A R D SGE D 4447SÖ4 Q0D5bS3 G HSCH-9101 HSCH-9201 HSCH-9251 TXVW-9101 TXVW-9201 TXVW-9251 GaAS BEAM LEAD SCHOTTKY BARRIER DIODES Features GOLD TRI-METAL SYSTEM For Improved Reliability 2S0m.QE

L346

Contextual Info: • M4 M7 S ö 4 GODTbOl HEWLETT-PACKARD/ 31T «HPA C MP NTS f X - « HEW LETT blE D PACKARD GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features • Gold Tri-M etal System For Improved Reliability • Low C apacitance

GaAs Schottky

Abstract: HSCH9201 9501
Contextual Info: GaAs Schottky Diode Series Pair Tee Technical Data HSCH-9501 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection

04B SOT363

Abstract: 35 micro-X Package MARKING CODE F
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

HSCH-8201

Abstract: schottky diodes Anti parallel HSCH9201
Contextual Info: fh p \ HEWLETT mi'HM PACKARD GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation

9351

Abstract: HSCH-9301 9301 9301 rohs HSCH-9351 HSCH-9101 HSCH-9201 HSCH-9251 HSCH9201
Contextual Info: Beam Lead GaAs Schottky Barrier Diodes Rs Part Ctotal Number pF (Ohms) HSCH-9101 HSCH-9201 HSCH-9251 HSCH-9301 HSCH-9351 0.040 0.040 0.040 0.075 0.075 6 6 6 6 6 Bv @ -10 µA (V) VF @ 1 mA (mV) Type Page >4.5 >4.5 >4.5 >4.5 >4.5 700 700 700 700 700 single

micro-x marking code E1

Abstract: 0004E4 SOT 86 MARKING E4
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

5082-3188

Abstract: HP 5082-3081 hp 5082* guide
Contextual Info: Non-Surface Mount PIN and Schottky␣ Diodes Selection Guide General Purpose Glass Schottky Diodes Typical Specifications @ 25°C Case Temperature Part Number Applications Vbr (V) Vf @ 1 mA (mV) Ct (pF) Ir (nA) 5082-2800 (1N5711) High level detecting, mixing, switching, gating, sampling, wave shaping

micro-x marking code E1

Abstract: SOT363 marking 12X DRR1-23XX DRR1-38XX DRT1-23XX HSCH-9101 HSCH-9161 HSCH-9201 SOT 86 MARKING E4 sot-23 6121
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

HSCH-9201

Abstract: HSCH9201
Contextual Info: GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation • Multiple Configurations

HSCH-9101

Abstract: HSCH-9201 HSCH-9201TC494 HSCH-9251 VF10 HSCH9201
Contextual Info: Agilent HSCH-9101, -9201, and -9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation • Multiple Configurations

Contextual Info: GaAs Schottky Diode Series Pair Tee Technical Data HSCH-9501 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

SCHOTTKY DIODE SOT-143

Abstract: sot 23 x 316 HSCH-5312 HSMS-285A HSMS-280X HSMS-281X HSMS-282X HSMS-285X HSMS-286X HSMS-8101
Contextual Info: Schottky Diode Selection Guides SOT-23/-143 General Purpose Schottky-Barrier Diodes Part VBR V VF (mV) VF @ IF (V @ mA) Number (min) (max) (max) HSMS-282X HSMS-281X HSMS-280X 15 20 70 340 400 400 Ct (pF) (max) RD (Ω) (typ) Page 1.0 1.2 2.0 12 15 35 3-36

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: diode 716 Die Attach and Bonding Guidelines HSCH-9201 HSCH-9501 chip diode agilent HSCH9201
Contextual Info: Agilent HSCH-9501 GaAs Schottky Diode Series Pair Tee Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection

HSCH9201

Contextual Info: WhttI H EW L E T T mXM PA CK A R D GaAs Beam Lead Schottky Barrier D iodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-M etal System For Improved Reliability • Low C apacitance • Low S eries R esistance • High C u toff Frequency

Contextual Info: Thnl HEWLETT WFEM PACKARD Schottky Diode Selection Guides SOT-23/-143 General Purpose Schottky-Barrier Diodes Vf mV VF @ IF(V @ mA) Part VBr (V) (m in) (m ax) (m ax) Number 15 20 70 HSMS-282X HSMS-281X HSMS-280X 340 400 400 Ct (p F ) (m ax) RD(£i) (ty p )