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    1N5712 Search Results

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    1N5712 Price and Stock

    Microchip Technology Inc 1N5712-1

    DIODE SCHOTTKY 20V 75MA DO35
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    DigiKey 1N5712-1 Bulk 1,803 1
    • 1 $4.36
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    Newark 1N5712-1 Bulk 161
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    NAC 1N5712-1 80
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    Master Electronics 1N5712-1
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    Microchip Technology Inc JANTX1N5712-1

    DIODE SCHOTTKY 20V 750MA DO35
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    DigiKey JANTX1N5712-1 Bulk 184 1
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    NexGen Digital JANTX1N5712-1 443
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    Avnet Silica JANTX1N5712-1 26 Weeks 100
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    Microchip Technology Inc 1N5712UB-TR

    SMALL-SIGNAL SCHOTTKY
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    DigiKey 1N5712UB-TR Reel 100 100
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    1N5712UB-TR Digi-Reel 100 1
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    1N5712UB-TR Cut Tape 100 1
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    Microchip Technology Inc 1N5712

    DIODE SCHOTTKY 20V 75MA DO35
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    DigiKey 1N5712 Bulk 77 1
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    Avnet Americas 1N5712 Bulk 24 Weeks 154
    • 1 $5.79
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    Newark 1N5712 Bulk 121
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    Microchip Technology Inc 1N5712 3,399 1
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    NAC 1N5712 60
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    Master Electronics 1N5712 224
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    Microchip Technology Inc 1N5712UBD-TR

    DIODE ARRAY SCHOTTKY 16V 75MA UB
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    DigiKey 1N5712UBD-TR Cut Tape 64 1
    • 1 $30.2
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    1N5712 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5712 Agilent Technologies Schottky Barrier Diodes for General Purpose Applications Original PDF
    1N5712 Avago Technologies Low 1/f noise general purpose Schottky diode Original PDF
    1N5712 Galaxy Semi-Conductor Holdings SMALL SIGNAL SCHOTTKY DIODES Original PDF
    1N5712 Galaxy Semiconductor Small Signal Schottky Diode Original PDF
    1N5712 Microsemi Schottky Rectifier Original PDF
    1N5712 STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original PDF
    1N5712 Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF
    1N5712 Hewlett-Packard Schottky Barrier Diodes for General Purpose Applications Scan PDF
    1N5712 Hewlett-Packard Schottky Barrier Diodes for General Purpose Applications Scan PDF
    1N5712 Hewlett-Packard Schottky Barrier Diodes for General Purpose Applications Scan PDF
    1N5712 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5712 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5712 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5712 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    1N5712 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    1N5712#T25 Avago Technologies RF Diodes, Discrete Semiconductor Products, DIODE SCHOTTKY SINGLE 20V AXIAL Original PDF
    1N5712#T25 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5712-1 Microsemi SCHOTTKY BARRIER DIODE Original PDF
    1N5712-1 Microsemi Schottky Rectifier Original PDF
    1N5712-1E3/TR Microchip Technology DIODE SMALL-SIGNAL SCHOTTKY Original PDF

    1N5712 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANTX, JX, JAN, Schottky

    Abstract: 1N5711UR-1 SCHOTTKY DIODE SOD-80 JANTX
    Text: • 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION


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    PDF 1N5711UR-1 MIL-PRF-19500/444 1N5712UR-1 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 JANTX, JX, JAN, Schottky SCHOTTKY DIODE SOD-80 JANTX

    1N5712 spice

    Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented


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    PDF 1N5711 1N5711 1N5712 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 spice 1N5711 spice 5082-2804 2800-Series 5082-2811 RS-296-D

    Untitled

    Abstract: No abstract text available
    Text: 1N5712+JANTX Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m


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    PDF 1N5712 Current33m Voltage20 Voltage550m Current150n

    1n5711 die

    Abstract: MIL-PRF-19500-444 microsemi 1n5712 1N5711 1N5712 CD2810 CD5711 CD5712 CD6857 CD6858
    Text: • 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444 CD2810 CD5711 CD5712 CD6857 CD6858 CD6916 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED


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    PDF 1N5711 MIL-PRF-19500/444 CD2810 CD5711 CD5712 CD6857 CD6858 CD6916 1N5712 MIL-PRF-19500/445 1n5711 die MIL-PRF-19500-444 microsemi 1n5712 CD2810 CD5711 CD5712 CD6857 CD6858

    diode t25 13 Go

    Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
    Text: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in


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    PDF 1N5711, 1N5712, 1N5712 5082-28xx T25/1N57xx 1N57xx 5082-28xx/ diode t25 13 Go 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811

    1N5711

    Abstract: 1N5712 ODS-54
    Text: 1N5711, 1N5712 MADS-005711-0054MT, MADS-005712-0054MT General Purpose Axial Lead Glass Packaged Schottky Diodes M/A-COM Products Rev. V2 Features • • • • • Glass Package Style Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed


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    PDF 1N5711, 1N5712 MADS-005711-0054MT, MADS-005712-0054MT ODS-54 1N5711 1N5712 ODS-54

    Untitled

    Abstract: No abstract text available
    Text: 1N5712UR1+JANTXV Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m


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    PDF 1N5712UR1 Current33m Voltage20 Voltage550m Current150n StyleDO-213AA

    Untitled

    Abstract: No abstract text available
    Text: 1N5712-1+JANTXV Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m


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    PDF 1N5712-1 Current33m Voltage20 Voltage550m Current150n

    5082-2800

    Abstract: 1N5712 5082-2811 diode 5082-2800 datasheet 1n5711 equivalent 1N5711
    Text: General Purpose Glass Schottky Diodes Typical Specifications @ 25°C Case Temperature Part Number Vbr (V) Vf @ 1 mA (mV) Ct (pF) Ir (nA) Page 5082-2800 (1N5711) 5082-2810 (1N5712) 5082-2811 5082-2835 70 20 15 8 410 410 (550) 410 340 2.0 1.2 1.2 1.0 200 @ 50 V


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    PDF 1N5711) 1N5712) 5082-2800 1N5712 5082-2811 diode 5082-2800 datasheet 1n5711 equivalent 1N5711

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


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    PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    MIL-PRF-19500-444

    Abstract: JANTX, JX, JAN, Schottky 1n5711 equivalent 1N5711-1 DSB5712 DSB2810 1N5711 1N5712 1N5712-1 1N6857-1
    Text: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS


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    PDF 1N5711-1 MIL-PRF-19500/444 1N5712-1 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 MIL-PRF-19500-444 JANTX, JX, JAN, Schottky 1n5711 equivalent DSB5712 DSB2810 1N5711 1N5712 1N6857-1

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5711, 1N5712 & 1N6263 • • SCHOTTKY DIODES For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.


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    PDF 1N5711, 1N5712 1N6263 1N5711 DO-35 MIL-PRF-19500,

    ODS-54

    Abstract: No abstract text available
    Text: 1N5711, 1N5712 MADS-005711-0054MT, MADS-005712-0054MT General Purpose Axial Lead Glass Packaged Schottky Diodes M/A-COM Products Rev. V2 Features • • • • • Glass Package Style Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed


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    PDF 1N5711, 1N5712 MADS-005711-0054MT, MADS-005712-0054MT ODS-54 ODS-54

    1N5712

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL 1N5712 VOLTAGE RANGE: 20 V POWER DISSIPATION: 430 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES Metal-to-silicon junction DO - 35 GLASS High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection


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    PDF 1N5712 DO--35 1N5712

    MIL-PRF-19500

    Abstract: MIL-PRF-19500-444 1N5712 1N5712 JANTX 1N5712-1 1N5712UR-1
    Text: INCH-POUND NOTICE OF CANCELLATION MIL-PRF-19500/445D NOTICE 2 15 February 2006 SUPERSEDING MIL-PRF-19500/445D NOTICE 1 8 March 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N5712, 1N5712-1, AND 1N5712UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC


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    PDF MIL-PRF-19500/445D 1N5712, 1N5712-1, 1N5712UR-1, MIL-PRF-19500/445D, MIL-PRF-19500/444. MIL-PRF-19500 MIL-PRF-19500-444 1N5712 1N5712 JANTX 1N5712-1 1N5712UR-1

    Untitled

    Abstract: No abstract text available
    Text: 1N5712-1+JANTX Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m


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    PDF 1N5712-1 Current33m Voltage20 Voltage550m Current150n

    N5711* diode Die

    Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
    Text: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS


    OCR Scan
    PDF 1N5711 1N5712 CD5711 CD5712 CD2810 CD2810 CD5711 CD5712 CD5711. N5711* diode Die 1N5711 DIE n5711 DSB5712

    5082-2815

    Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
    Text: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*


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    PDF 1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805

    5082-2815

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


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    PDF 44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815

    5082-2815

    Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
    Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


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    PDF 0005fc 1N5711 1N5712 1N5711, 1N5712, i712- 1n57h 1n5712 5082-2815 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912

    Untitled

    Abstract: No abstract text available
    Text: 1N5711UR-1 1N5712UR-1 CDLL5711 CDLL5712 CDLL2810 CDLL6263 1N5711UR-1 AVAILABLE IN JAN, JANTX AND JANTXV • 1N5712UR-1 AVAILABLE IN JAN, JANTX AND JANTXV • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION -1


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    PDF 1N5711UR-1 1N5712UR-1 CDLL5711 CDLL5712 CDLL2810 CDLL6263

    jantx diodes

    Abstract: 1N5711 JANTX
    Text: 1N5711 and 1N5711-1 1N5711 AVAILABLE IN JAN, JANTX AND JANTXV • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV and • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N5712-1 • SCHOTTKY BARRIER DIODES and • HERMETICALLY SEALED DSB5712 and DSB2810 • METALLURGICALLY BONDED -1


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    PDF 1N5711 1N5711-1 1N5712-1 DSB5712 DSB2810 1N5711. jantx diodes 1N5711 JANTX

    C68001

    Abstract: 1N5712 1N5712 JANTX CI 4011 N5712 JANTXV1N5712 1N5712 JANTXV C-68001
    Text: SCHOTTKY SWITCHING DIODE MILITARY APPROVED M IL-S -19500/445 H E W L E T T ^ PA CK ARD COMPONENTS JAN 1N5712 JANTX mm m m 15712 Features LOW TURN-ON VOLTAGE Description /Applications Maximum Ratings at T he J A N S e rie s 1 N 5 7 1 2 is an e p ita x ia l, p la n a r p a s s iv a te d


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    PDF 1N5712 MIL-S-19500/445 N5712 MlL-S-19500/445) 1071E 2036E 1071G 1071E 33mAdc, C68001 1N5712 1N5712 JANTX CI 4011 JANTXV1N5712 1N5712 JANTXV C-68001

    cd2810

    Abstract: 1N5711 DIE
    Text: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS


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    PDF 1N5711 1N5712 CD5711 CD5712 CD2810 cd2810 1N5711 DIE