SOT212 Search Results
SOT212 Datasheets Context Search
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Transistor 2TY
Abstract: PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor
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cnx2174bbflslcut-of1986ot212+11 | |
453 optocoupler
Abstract: optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output SL5505S
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sl5505sot97fot21274bbflsl+5 | |
314 optocoupler
Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
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of4114ot90bcny17-314cnp+11 | |
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Contextual Info: Product specification Philips Semiconductors GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • Input/output pin distance |
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cng82/cng83e90700bs415cng82+4 | |
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Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits. |
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sl5500sl5501sl5511ot212+1 | |
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Contextual Info: Philips Semiconductors Product specification 7- H t - r j Optocouplers ÛUA L IT Y T E C H N O L O G I E S CNY17-1 to 4/CNY17F-1 to 4 CORP S7E D 74bbasi OOQMblM • Fast switching STANDARD REFERENCE • Low saturation voltage UL note 1 • High maximum output voltage |
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cny17-14/cny17f-174bbasi0110b+4 | |
CNY17G-3
Abstract: CNY17G3
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cny17g/cny17gfe90700bs415bs7002+6 | |
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Contextual Info: Philips Semiconductors Product specification 7 Heavy duty optocouplers 2UALITY T E C H N O L O G I E S C0 RP CNW11AV-1/2/3 S7E D 74bbfi51 0 0 G 4 4 b 4 03T « f i T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a |
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cnw11av-1/2/374bbfi51e90700ot212+3 | |
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Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope. |
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e907000110bac/45057804/vde+6 | |
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Contextual Info: Philips Sem iconductors Product specification High voltage optocouplers flUALITY T E C H N O L O G I E S CORP SL5582W/SL5583W S7E D • 7 4 b b A5 1 0 D O 4 74 1 EflH ■ f l T Y FEATURES • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm |
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sl5582w/sl5583wsl5582wsl5583wot212+2 | |
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Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers ÖUALITY tec h n o lo g ie s corp CNX82A/CNX83A S7E T> TMbbôSl OOOMbOS bS3 «fiTY FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable for use with |
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cnx82a/cnx83acnx82acnx83aareot231+5 | |
sot212
Abstract: Quality Technologies optocouplers 2ty transistor
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cng82/cng83e90700bs4150110b+6 | |
453 optocouplerContextual Info: Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers 3UALITY T E C H N O L O G I E S CORP 57E D 7Mbbfl51 O O Q M S q Q OGI • ( 3 T Y FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with |
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cnx71aandcnx72aareot229bcnx72a+7 | |
453 optocoupler
Abstract: Transistor 2TY SOT230
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cnx62a74bb051ot230e90700+8 | |
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Contextual Info: Product specification Philips Semiconductors Wide body, high isolation/high-gain optocouplers flUALITY TECHNOLOGIES CORP CNW 138/CNW 139 57E J> 7Mbt3fl51 0004512 bll • ö T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm |
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138/cnw7mbt3fl51ot21274bbflsl+2 | |
Transistor 3TYContextual Info: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life |
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cng36ot90bot21274bbflsl+3 | |
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Contextual Info: Philips Semiconductors Product specification Heavy duty optocouplers CNW84/CNW85 D U A L IT Y T E C H N O L O G I E S CORP S7E D 7HbbflSl DGD44flb 7TT • Ö T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body DIL encapsulation |
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cnw84/cnw85dgd44flbot21274bbflsl+2 | |
Philips 4N26Contextual Info: 4N25 4N25A 4N26 4N27 4N28 ÖUALITY TECHNOLOGIES CORP S 7E D • 74 bbfl51 G 004753 TTb «flTY ' S Ä ¿ É Ê V -VI-Î3 1- 1 OPTOCOUPLERS This product range is one of the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply with the specifications of the main part of the |
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4n25abbfl51ot21274bbflsl+2 | |
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Contextual Info: ÖUALITY TECHNOLOGIES CORP S7E D • MCA230 MCA231 MCA255 7MbböSl OaOMbM? fill ■ Ö T V OPTOCOUPLERS i— _ J \ Optically coupled isolators consisting of an infrared emitting GaAs diode and an npn silicon photo-Darlington transistor. Features o f these products: |
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mca230mca231mca255e90700+5 | |
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Contextual Info: Philips Semiconductors _Product specification T -*i I — Wide body, high isolation, high-speed optocouplers CNW135/CNW136/CNW4502 ÛU ALI TY T E C H N O L O G I E S CORP FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm |
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cnw135/cnw136/cnw45027hbbfl51cnw4502cnw136+5 | |
Transistor 2TY
Abstract: .2ty transistor npn
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cnx48u7mhbfi51e907000110b+8 | |
PHILIPS CNW82
Abstract: Quality Technologies optocouplers
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cnw82/cnw83e90700bs415bs7002+6 | |
optocoupler ic
Abstract: Philips MBB BS415 CNG82 CNG83 7Z04 Phototransistor til 81 phototransistor til 31
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cng82/cng83cng82cng83ot212+8 | |
Transistor 2TY
Abstract: 2ty transistor Transistor+2TY .2ty transistor npn .2ty transistor
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sl5504ot21274bbflsl0dd4fl03+5 | |