NA22 Search Results

Contextual Info: NA22ZX Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22EX Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22ZY Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

MPS9488

Abstract: 8C208 KT3818 2SA838 8C252 LOW-POWER SILICON PNP MPS948 8C2528 BSY41 8C513
Contextual Info: RF LOW-POWER SILICON PNP Item Part Number Number V BR CEO 5 10 NA02EI NA02FI NA12EI NA22EI NA22FI NA22XI NA22YI NA02EY NA02FY NA22EY ~~~~x~ 15 20 NA22YY 8C2058 8C2088 SF213 SF313 8C2528 8C2538 8C2828 ~~~~~~ 25 30 NA02FJ NA12EJ NA22EJ NA22FJ NA22XJ NA22YJ 8C259C

2SA1286H

Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI

Contextual Info: NA22ZH Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22EJ Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22EY Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22EH Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22EG Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22ZJ Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

K2341

Abstract: LA3155 XR 2271 HH22P
Contextual Info: No.C2 2 7 E 5137 Ill' L * Â - X 1 5 5 / ' i s v j r ') I / Î , 7 3 A * — A * 7 -L 'a f f i Na227D "%.s 'X to J: CJS >S 2Pä S i ? 7 U . 9 WJ É £ ^ — •y 9- ^ ' / í » 0 ' / 3 / / * — f? c o v ^ A íc J: 0 « « * v & ^ M . tk r w m z &<¿ ./' •

NA22

Contextual Info: CUB 0.6 µm NA22 R Austria Mikro Systeme International NA22 is a 2-input NAND gate with 2x drive strength. Truth Table A B Q L L H H L H L H H H H L Capacitance Ci pF A B A NA22 Q 0.069 0.061 B Area Power 0.41 mils2 3.00 µW / MHz Delay [ns] = tpd. = f(SL, L)

Contextual Info: NA22ZG Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: NA22ZI Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

7408, 7404, 7486, 7432

Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers

Amptek a250

Abstract: XR-100T-CZT LEMO 6 pin GAMMA Radiation Detector Amptek LEMO lemo 8 pin female connector BA133 D-connector peltier cooler
Contextual Info: R AMP TEK X-RAY AND GAMMA RAY DETECTOR HIGH RESOLUTION CZT CADMIUM ZINC TELLURIDE DETECTOR TECHNOLOGY ADVANCEMENT - The XR-100T-CZT provides “off the shelf” performance previously available only from expensive cryogenically cooled systems. Be Window Detector

PST2430B

Contextual Info: POWER SUPPLIES Flex 6005A 1 Phase Flex 6012A (1 Phase) Flex 17048A (1 Phase) Flex 28048A (1 Phase) Flex 17012A (1 Phase) Flex 50048A (1 Phase) Flex 28012A (1 Phase) Flex 9024B (2 Phase) Flex 6024A (1 Phase) Flex 17024B (2 Phase) Flex 28024B (2 Phase) Flex 17024A

PAC1000

Abstract: SAM448 DALLAS 2501 PSD100 WS27c010 Waferscale Integration pac1000 IR 9515 datasheet 9435, ic BA 9706 K Microcontroller AT89C51 plcc 44 pin details
Contextual Info: Reliability Summary 1999 Waferscale Integration, Inc. Reliability Summary 1999 Copyright 1999 Waferscale Integration, Inc. All rights reserved. 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-5916 Web Site: http://www.waferscale.com

a2240

Abstract: uA2240 UA224 MA2240DC MA2240C uA2240 time setting *A2240
Contextual Info: F A I R C H MA2240 Programmable Timer/Counter I L D A Schlumberger Company Linear Division Special Functions Description The juA2240 Programmable Timer/Counter is a monolithic controller capable of producing accurate microsecond to five day time delays. Long delays, up to three years, can

m6845

Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
Contextual Info: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate

NA38

Abstract: NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver

N222

Abstract: E76675 ZE-N22-2 4 mm Vibration Motor ZE-Q22-2 XE-Q22-2 C020-E1-8 xj1000
Contextual Info: Enclosed Switches ZE/ZV/XE/XV Long Service Life and Large Breaking Power ZE, ZV, and ZV2 incorporate Model Z Basic Switches with rugged diecast cases. Available with various models of built-in switches including split contact model, maintained operation type, magnetic blowout model and various

NA2X

Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
Contextual Info:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the