BA133 Search Results

Contextual Info: Audio ICs FM stereo demodulator | BA1332 / BA1332L / BA1332F The BA1332, BA1332L, and BA1332F are PLL-based FM stereo dem odulator ICs that are suitable for a wide range of applications from car-audio systems to portable radio-cassette players. A built-in regulated power supply allows

ba1330

Abstract: BA1330 Circuit, BA-1320 BA1320 STEREO MULTIPLEXER
Contextual Info: Stereo Multiplexer BA1330 Dim ensions mm 55 LI I 1 14 II 13 II 2 3 11 \2 II 4 10 1 1 I I I U 5 6 7 L— 8 .8 ± 0 .6 The BA1330 is a monolithic integrated cir­ cuit consisting of an FM stereo dem odula­ tor using phase-locked lo optechniquesto derive the right and left audio channels

BA1322

Abstract: BA1332L BA1332 BA1332F 1.5v FM receiver CIRCUIT DIAGRAM ZIP16 FM stereo receiver loop filter audio ics FM stereo demodulator BA1332 stereo potentiometer 100k Styrene capacitor
Contextual Info: Audio ICs FM stereo demodulator BA1332 / BA1332L / BA1332F The BA1332, BA1332L, and BA1332F are PLL-based FM stereo de m od ula to r ICs that are suitable for a w ide range of applications from car-audio systems to portable radio-cassette players. A built-in regulated power supply allows

BA1332L

Abstract: 6 pin stereo potentiometer BA1332 BA1332F RSE-P ZIP16
Contextual Info: Audio ICs FM stereo demodulator BA1332 / BA1332L / BA1332F The BA1332, BA1332L, and BA1332F are PLL-based FM stereo de m od ula to r ICs that are suitable for a w ide range of applications from car-audio systems to portable radio-cassette players. A built-in regulated power supply allows

BA1332L

Abstract: BA1332 RF Demodulators
Contextual Info: BA1332 BA1332L BA1332F FM stereo demodulator The BA1332, BA1332L, and BA1332F are PLL system FM stereo demodulators. They each have the same function; the difference is in the packaging. Dimensions Units : mm BA1332 (DIP16) Because this is a PLL system, there are

BA1322

Abstract: fm stereo demodulator BA1332L
Contextual Info: Audio ICs FM stereo demodulator BA1332 / BA1332L / BA1332F The BA1332, BA1332L, and BA1332F are PLL-based FM stereo demodulator ICs that are suitable for a wide range of applications from car-audio systems to portable radio-cassette players. A built-in regulated power supply allows

BA1332

Abstract: BA1332L BA1332I
Contextual Info: BA1332/BA1332L/BA1332 F BA1332 BA1332L BA1332F FM FM Stereo Multiplexer • ÿHtë^j&ISI/Dimenslons Unit : mm BA1332, BA1332L, B A 1 3 3 2 F li, f t -7.7- 7 h i L fc F M 7 JV=f- ? U v 7 X X x U i a i H f f l l C T ' To rtpB3?3EMk i8 £ 1ft < I x i t L T * ‘J i f r o T , VCc =

BA1335

Abstract: ba1330 ba1320 BA1330 Circuit, BA-1335 BA1335F BA-1320 BA-1330
Contextual Info: BA1335 BA1335 FM FM Stereo Multiplexer ^ JR ^ t& E g /D im e n s io n s U n it: mm BA1335 l i , b y h<D kiblzm m LtzPliy5^m m <r>FM ^J^-/U y ¿ zzT -i'tm m m * ; u v v ? \ c ? t 0 « 'M S B , i S * « 3.3V * T ? $ S l c B f t U t 1-o t i t , « 4' l i f t * , * j f t iH « « iz ;* x U * C 4 5

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Amptek a250

Abstract: XR-100T-CZT LEMO 6 pin GAMMA Radiation Detector Amptek LEMO lemo 8 pin female connector BA133 D-connector peltier cooler
Contextual Info: R AMP TEK X-RAY AND GAMMA RAY DETECTOR HIGH RESOLUTION CZT CADMIUM ZINC TELLURIDE DETECTOR TECHNOLOGY ADVANCEMENT - The XR-100T-CZT provides “off the shelf” performance previously available only from expensive cryogenically cooled systems. Be Window Detector

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

BA5412

Abstract: ba1335 BA1355 BA1360 BA5413 ba532 BA1360F BA4422AN BA1441 BA1404
Contextual Info: ROHM CO LTD MQE ^#•^1^-’^ . - - -l ì . ._ r D ■ .— GDG32S1 S MRHM — -kiiLÙJ^^ 7 ^ 7 7 -0 ! j. , - • RF Signal Processors continued Function Type Package Conliguralion No. ofpins Features Reference Catalog BA4405 FM front end

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

BA102

Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
Contextual Info: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

samsung ba92

Abstract: BA137 k8p3215
Contextual Info: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

diode ba102

Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Contextual Info: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as