lf817
Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Contextual Info: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V
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sla8004100max60max60min+8150min35max55min80minlf817pnp 8 transistor arraypnp array1/stv 9902
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2SC4883A
Abstract: 2SC4883 FM20 DSA0016510
Contextual Info: 2SC4883/4883A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1859/A Application : Audio Output Driver and TV Velocity-modulation •Absolute maximum ratings (Ta=25°C) (Ta=25°C) IC 2 A V(BR)CEO 180min 150min IC=10mA IB 1 A hFE VCE=10V, IC=0.7A
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2sc4883/4883a2sa1859/a10max180min+8150min120typ30typo220f2sc48832sc4883afm20dsa0016510
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2SD2560
Abstract: 2SB1647 DSA0016513
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA
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2sd25602sb1647mt-100100max+5150min5000min70typ120typdsa0016513
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2SD2562
Abstract: 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2sd25622sb1649fm100100max+4150min5000min70typ120typ
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2SD2438
Abstract: 2SB1587 transistor ,12v ,Ic 1A ,NPN
Contextual Info: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A
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2sd24382sb1587fm100100max+5150min5000min80typ85typtransistor ,12v ,ic 1a ,npn
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Contextual Info: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max
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sla8004lf817100max60max+460min150min35max55min
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2SC4382
Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Contextual Info: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A
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2sc4381/43822sa1667/166810max150min+10200min60min15typ35typo220f2sc43822sc4381fm202sc4382 transistordsa0016509
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2SD2439
Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2sd24392sb1588fm100100max+4150min5000min55typ95typ
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2SD2390
Abstract: 2SB1560
Contextual Info: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max
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2sd23902sb1560mt-100100max+4150min5000min55typ95typ
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LF400A
Abstract: STA335A 10T25 IC 122
Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A
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sta335a10max500min150min+3lf400a10t25ic 122
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2SD2560
Abstract: 2SB1647 2sd25
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)
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2sd25602sb1647100max150min+55000min70typ120typmt-1002sd25
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2sc2837
Abstract: 2SA1186
Contextual Info: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE 50min∗ VCE=4V, IC=3V A VCE(sat) IC=5A, IB=0.5A 2.0max V 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C
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2sc28372sa1186mt-100100max+4150min50min70typ60typ
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2SD2562
Abstract: 2SD256 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2sd25622sb1649fm100100max+5150min5000min70typ120typ2sd256
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2SC2837
Abstract: 2SA1186 cin60 2SA1186 2SC2837 DSA0016506
Contextual Info: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE VCE=4V, IC=3V 50min∗ V 2 A VCE(sat) IC=5A, IB=0.5A PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C
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2sc28372sa1186mt-100100max+7150min50min70typ60typcin602sa1186 2sc2837dsa0016506
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transistor 2SD2389
Abstract: 2SD2389 2SB1559
Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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2sd23892sb1559mt-100100max+3150min5000mintransistor 2sd2389
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2SC3284
Abstract: 2SA1303 2sC3284 power transistor
Contextual Info: 2SC3284 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1303 ICBO VCB=150V 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO IC=25mA 150min V A hFE VCE=4V, IC=5A 50min∗ IC=5A, IB=0.5A 2.0max V 14 IB 3 A VCE(sat) PC 125(Tc=25°C) W fT VCE=12V, IE=–2A
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2sc32842sa1303mt-100100max+5150min50min60typ200typ2sc3284 power transistor
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2SB1648
Abstract: 2SD2561 2sd25
Contextual Info: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB
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2sd25612sb1648100max150min+55000min70typ120typmt-2002sd25
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2SD2439
Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2sd24392sb1588fm100100max+4150min5000min55typ95typ
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2SD2633
Abstract: 84AB 2sd26
Contextual Info: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)
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2sd2633100max10max150min+42000mino220f84ab2sd26
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2SD2561
Abstract: DSA0016513 2sb1648
Contextual Info: Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A
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2sd25612sb1648100max150min+55000min70typ120typmt-200dsa0016513
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2SC4886
Abstract: 2SA1860
Contextual Info: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank
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2sc48862sa1860100max150min+650min500ma60typ200typ26typ35typ
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2SD2438
Abstract: 2SB1587 transistor 2SD2438
Contextual Info: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A
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2sd24382sb1587fm100100max+5150min5000min80typ85typtransistor 2sd2438
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2SD2389
Abstract: 2SB1559 in401
Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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PT 1132
Abstract: LF400A STA335A
Contextual Info: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A
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sta335a10max500min150min+2lf400apt 1132
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