2SD26 Search Results

marking z04

Abstract: 2SB1706 2SD2671 tsmt5 "marking code" Z04
Contextual Info: QSZ4 Transistors General purpose transistor isolated transistor and diode QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ4 (5) (4) zFeatures 1) Low VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD2634

Contextual Info: SavantIC Semiconductor Product Specification 2SD2634 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING

FML10

Abstract: RB461F 2SD2652
Contextual Info: FML10 Transistors General purpose transistor isolated transistor and diode FML10 2SD2652 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)

2SD2670

Abstract: marking code z03 2SB1705
Contextual Info: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor

1225 transistor 09 d

Contextual Info: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)

Contextual Info: Reliability Tests Report Product Name: 2SD2686 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SD2653

Contextual Info: 2SD2653 Transistors Low frequency amplifier 2SD2653 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 180mV at IC = 1A / IB = 50mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)

Contextual Info: Ordering number: ENN6922 | _ NPN Triple Diffused Planar Silicon Transistor 2SD2646 ¡SAHYOj Color TV Horizontal Deflection Output Applications Package Dimensions Features • H igh speed. unit : mm • High breakdown voltage VCBO= 1500V .

Contextual Info: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2

2SB1676

Abstract: 2SD2618 doide base, collector, emitter
Contextual Info: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector

2sd2693

Contextual Info: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2sd2693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

2sd2693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

Contextual Info: Preliminary Datasheet 2SD2655 R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

Contextual Info: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 (5) 0.85 (4) 0~0.1 0.3∼0.6 0.7 0.16 (3)

Contextual Info: 2SD2673 Transistors Low frequency amplifier 2SD2673 !External dimensions Units : mm !Application Low frequency amplifier Driver 0.4 2.9 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 0.1 0.7 0.16 (2) !Features 1) A collector current is large. (3A) 2) VCE(sat) ≤ 250mV

TUMT5

Contextual Info: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Units : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) (1)Base (2)Collector (3)Emitter

2SD2642

Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Contextual Info: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max

2SD2627LS

Abstract: 2sd2627
Contextual Info: Ordering number : ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2sd2658

Abstract: 2SD2658LS 13002 13002 TRANSISTOR transistor 13002 k 3531 transistor
Contextual Info: Ordering number : ENN7168 2SD2658LS NPN Triple Diffused Planar Silicon Transistor 2SD2658LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

13001 TRANSISTOR sw

Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
Contextual Info: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

Contextual Info: 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !External dimensions (Units : mm) !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage.