DOIDE Search Results

1SS377

Abstract: marking O9
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

2SB1676

Abstract: 2SD2618 doide base, collector, emitter
Contextual Info: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS IDS33003 REV 1-2012 MODEL SC-70-3 SOT-323 ACCEPTS 33003 PARTIAL LISTING ANALOG KS-3 CENTRAL SUPERMINI TM * DOIDES INC. DFN322 *1 NEC PKG No. 30 ON SEMI CASE 419-AB-01

650 DIODE

Abstract: bat62-03w smd diode 1301
Contextual Info: Diodes SMD Type Silicon Schottky Doide BAT62-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low Barrier diode for detectors up to GHz frequencies +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

2SB1474

Abstract: doide
Contextual Info: 2SB1474 Transistor Power Transistor -80V, -4A 2SB1474 •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. •External dimensions (Units: mm) •Absolute maximum ratings (Ta=25°C)

c4574

Abstract: 2SD2478 2SC4574 b426 2SB1616
Contextual Info: 2SB1616 2SD2478 Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 •Absolute maximum ratings (Ta=25"C) •Features 1 ) D arlington connection for a high hre. 2 ) Built-in resistor betw een base and emitter. 3 ) Built-in dam per doide.

Contextual Info: 2SB1474 / 2SB1342 2SD1933 Transistors Power Transistor —80V, —3A 2SB1474 / 2SB1342 I •A b s o lu te maximum ratings (T a = 2 5 t:) •F e a tu re s 1) 2) 3) 4) Darlington connection for a high hre. Built-in resistor between base and em itter. Built-in dam per doide.

33003

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33003 PARTIAL LISTING ANALOG KS-3 CENTRAL SUPERMINI TM * DOIDES INC. DFN322 *1 NEC PKG No. 30 ON SEMI CASE 419-AB-01 RENESAS SSP TOSHIBA UFM / USM

c4574

Contextual Info: Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 iA bsolute maximum ratings (T a = 2 5 ”C ) •F e a tu re s Sym bol L im its 1 ) Darlington connection for a high hre. 2 ) Built-in resistor between base and em itter. 3 ) Built-in dam per doide.

2SD2399

Contextual Info: 2SB1568 2SD2399 Transistors Power Transistor —80V, —4A I 2SB1568 •F e a tu re s 1 ) Darlington connection for a high hFE. 2 ) Built-in resistor between base and emitter. 3 ) Built-in damper doide. 4 ) Complements the 2SD2399. •A b s o lu te maximum ratings (T a = 2 5 ,C )

1gw transistor

Abstract: 1j4b41 Toshiba thyristors smd 1gw transistor smd 1zc diode s5688G PFR 215 N equivalent 1J4B41 equivalent
Contextual Info: 2. RATINGS AND USAGE 2.1 Maximum Ratings 2.1.3 Current Ratings. 1 Steady state operation current rating. TcMax (or Ta Max)- If(AV) (or Io) , curves show current which can be supplied at steady state. These curves are set so as to make the junction temperature o f elements

vcsel spice model

Contextual Info: MAX3996 I/O Model 2.5Gbps VCSEL Driver SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and

block diagram for spy ear

Abstract: m30c design of spy ear spy ear datasheet COP87L84BC COP87L88EB COP87L88RB COP87L89EB COP87L89RB COP888EB
Contextual Info: Semiconductor ß COP87L88EB/RB Family 8-Bit CMOS OTP Microcontrollers with 16k or 32k Memory, CAN Interface, 8-Bit A/D, and USART General Description The C O P 87L88EB/R B Fam ily OTP (One Tim e program ­ mable m icrocontrollers are highly integrated COP8 Fea­

Contextual Info: SM320C6414ĆEP, SM320C6415ĆEP, SM320C6416ĆEP FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SGUS043–MAY 2003 D Controlled Baseline D D D D D D D D D D L1/L2 Memory Architecture – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of

CN100 connector

Abstract: standby relay rc 5 remote control CN1002
Contextual Info: HRPG-600 600W Single Output with PFC Function series Features : Universal AC input / Full range Built-in active PFC function, PF>0.95 High efficiency up to 89% Withstand 300VAC surge input for 5 seconds Protections: Short circuit / Overload / Over voltage / Over temperature

COP87L84BC

Abstract: COP87L88EB COP87L88RB COP87L89EB COP87L89RB COP888EB
Contextual Info: COP87L88EB/RB Family 8-Bit CMOS OTP Microcontrollers with 16k or 32k Memory, CAN Interface, 8-Bit A/D, and USART General Description The COP87L88EB/RB Family OTP One Time programmable microcontrollers are highly integrated COP8 Feature core devices with 16k or 32k memory and advanced

B-408 diode

Abstract: MIL-STD-883 method 3015 15kV
Contextual Info: PRELIMINARY CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge

pow-r-blok

Abstract: WESTINGHOUSE POW-R-BLOK Westinghouse module powerex pow-r-blok Westinghouse Power rectifier CS412499
Contextual Info: Ts 7294621 POWEREX INC » F | 7 5 cmbai ooooaat i | POW-R-BLOK ASSEMBLIES Rectifier POW-R-BLOK The PO W -R -BLO K combines multiple pow er semiconductor devices in a single, electrically isolated module. Cost effec­ tive packaging is made possible by W esting house's proprietary glass

K973

Abstract: 2SK973 SP-10 4AK18 2SK97-31
Contextual Info: HITACHI 4AK18 SILICON N-CHANNEL P O W E R MOS FET ARRAY HIGH S P EED PO W ER SWITCHING • FEA TU RES • Low O n-R esistance Rds on ^ 0.38 Q , V GS = 10 V, l0 = 1 A RD3 ( o n ) ^ 0 . 5 3 i i , V es = 4 V , lD = 1 A • C apable of 4 V G ate Drive • Low Drive C u rrent

2SJ175 equivalent

Abstract: 2SJ172 2SJ175 2SK1093 2SK970 AM11 2SK109
Contextual Info: HITACHI 4AM11 SILICON N-CHANNEL/P-CHANNEL PO W E R MOS FET ARRAY HIGH SPEED POWER SWITCHING • FEA TU RES • Low Qn-Resistance N-channel; RDS Ion ^ 0.17 £?, V GS — 10 V. I0 - 2.5 A P-channel Ros o n )£ 0 .2 Q . VGS - -10 V, lD - -2.5 A Capable of 4 V Gate Drive

CTX02-12295

Abstract: 0/CTX02-12295
Contextual Info: /riincAß_ ^ TECHNOLOGY Power F actor C ontroller F€ATUR€S DCSCRIPTIOn • Standard 8-Pin Packages ■ High Power Factor Over Wide Load Range with Line Current Averaging ■ International Operation Without Switches ■ Instantaneous Overvoltage Protection

lm5107

Contextual Info: LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 LM5107 100V / 1.4A Peak Half Bridge Gate Driver Check for Samples: LM5107 FEATURES DESCRIPTION • The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side

NS692405

Abstract: KB926 tps51125 KB926 sequence LA-4102p FBMA-L11-201209-221LMA30T kb926qf SLG8SP553 compal HP Keyboard KB 0316
Contextual Info: A B C D E 1 1 Compal confidential Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_PM+ICH9-M core logic 2 2 2008-02-25 3 3 www.kythuatvitinh.com 4 4 Compal Secret Data Security Classification 2008/02/25 Issued Date 2008/02/25 Deciphered Date Title

rh 006c

Contextual Info: TMS320C6202, TMS320C6202B FIXEDĆPOINT DIGITAL SIGNAL PROCESSORS SPRS104F – OCTOBER 1999 – REVISED AUGUST 2002 D D D D D D Signal Processors DSPs – TMS320C62x – 5-, 4-, 3.33-ns Instruction Cycle Time – 200-, 250-, 300-MHz Clock Rate – Eight 32-Bit Instructions/Cycle