1SS377 Search Results

1SS377

Abstract: marking O9
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V typ. @IF = 5mA Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS377

Contextual Info: 1SS377 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS377 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA

1SS377

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V

1SS377

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V typ. @IF = 5mA Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit: mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

TO-236MOD

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V

1SS377

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm l Low forward voltage : VF = 0.23V typ. @IF = 5mA l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS377 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 ’ -Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 = +Q85 IO HO dd + I d i MAXIMUM RATINGS (Ta = 25°C)

vr-1M

Abstract: 1SS377 u25 diode
Contextual Info: 1SS377 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS377 HIGH SPEED SWITCHING. Unit in mm 2 .5 +1 0Q.53 • • i «5+Û25 Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 ¿1 —Q 15 i HO dd + i MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Product specification 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: 1SS377 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 —Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 =+ Q 8 5 IO HO dd + I d i M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 1SS377 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE U • WÊÊÊF < ; ^ 7 7 9Ê Ê F w ar m m HIGH SPEED SWITCHING. U nit in mm + 0. 5 2.5 - 0 ,3 c. + a 2 5 , • Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA in HO • Small Package dd

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer