110MIN Search Results

2SD2642

Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Contextual Info: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max

2SD2641

Abstract: 2SB1685
Contextual Info: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA

2SD2643

Abstract: 2SB1687 transistor 2SB1687
Contextual Info: C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1687 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions Ratings Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A

Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA

2sd2495 equivalent

Abstract: 2SD2495 2SB1626 FM20
Contextual Info: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A

IE5A

Abstract: Transistor 2Sd2589 2SD2589 2SB1659
Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA

2SD2494

Abstract: 2SB1625
Contextual Info: Equivalent circuit 2SD2494 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1625 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions 2SD2494 Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A

transistor 2sb1624 2sd2493

Abstract: 2SB1624 2SD2493 2sd2493 transistor
Contextual Info: Equivalent circuit 2SD2493 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1624 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA

sth-01

Abstract: sth-01r
Contextual Info: ~\ 8001900 MHz Band Chip 0 deg. Splitter / Combiner Model No. STH-01 R-[ ] Equivalent Circuits \ r Shape & Size «M h -0 D In (Sum port (DO— ^ 1—^ CM CO J3 (4) Out-1 Out-2 -O© O unit (mm) J V Specifications P/N STH-01 R-1 Frequency Matching

O10050

Contextual Info: 2.4GHz Band Chip 0 deg. Splitter / Combiner Model No. SLH-240 Equivalent Circuits r . N Shape & Size < - o '-0 H < k >f o_ >r _> o r J DO— ^ ©3 <D 30 -o© € © (D > > > m ® jg f o> in (Sum port @ Out-1 © 0ut-2 Ij, © © > © Ground

hitachi metals

Abstract: SLM-090A
Contextual Info: HITACHI METALS 350 / 500 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1-L Equivalent Circuits Shape & Size Specifications Lo Level Frequency Isolation +7dBm Typ. RF:350-500MHz L0:400-550MHZ IF :DC - 150MHz LO-RF:20dB Min. 30dB Typ. LO-IF:10dB Min. (15dB Typ.)

SLM-090A1

Abstract: SLM-090A
Contextual Info: HITACHI “ METALS 800 / 900 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits Shape & Size Specifications Lo Level +7dBm Typ. Conversion Loss Frequency RF:700-1000MHz L0:700-1100MHZ IF :DC - 400MHz Impedance Isolation LO-RF:18dB Min. 30dB Typ.

Contextual Info: 1.7 11.9 GHz Band Chip Multilayer Coupler Model No. SLC-150SE Equivalent Circuits Shape & Size CD In A V o o I - mA 0> «=V c/> m CNJ CO D Isolation Port @ Out (D Coupling Port © <u> (IX D Ground unit (mm Specifications Frequency Coupling Range Insertion

IC 7106

Abstract: IC1 723 N13T1 I431 telcordia
Contextual Info: DEMO KIT AVAILABLE DS3100 Stratum 3/3E Timing Card IC www.maxim-ic.com GENERAL DESCRIPTION FEATURES When paired with an external TCXO or OCXO, the DS3100 is a complete central timing and synchronization solution for SONET/SDH network elements. With two multiprotocol BITS/SSU receivers

Contextual Info: Rev: 070308 DS3102 Stratum 3 Timing Card IC with Synchronous Ethernet Support General Description The DS3102 is a low-cost, feature-rich timing IC for telecom timing cards. With 8 input clocks, the device directly accepts both line timing from a large number of

2SD2589

Contextual Info: 7 0Ω E 2SB1659 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Conditions Ratings Unit V ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A

Ic 7423

Contextual Info: DEMO KIT AVAILABLE DS3101 Stratum 3/3E Timing Card IC www.maxim-ic.com FEATURES GENERAL DESCRIPTION When paired with an external TCXO or OCXO, the DS3101 is a highly integrated central timing and synchronization solution for SONET/SDH network elements. With 14 input clocks, the device directly

Contextual Info: Rev: 012108 DS3102 Stratum 3 Timing Card IC with Synchronous Ethernet Support Features General Description The DS3102 is a low-cost, feature-rich timing IC for telecom timing cards. With 8 input clocks, the device directly accepts both line timing from a large number of

IC 7106

Contextual Info: DS3100 Stratum 3/3E Timing Card IC www.maxim-ic.com GENERAL DESCRIPTION FEATURES When paired with an external TCXO or OCXO, the DS3100 is a complete central timing and synchronization solution for SONET/SDH network elements. With two multiprotocol BITS/SSU receivers

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

TCXO KSS

Abstract: ccpd 33 CB UPC 1018 UAA2072M UMA1018M
Contextual Info: Philips Semiconductors Preliminary specification Low-voltage dual frequency synthesizer for radio telephones UMA1018M FEATURES The principal synthesizer operates at VCO input frequencies up to1.2 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the

ACS8520

Abstract: ACS8530 DS3100 DS3101 DS3101GN GR-1244 GR-253 ocxo 25MHz GR378
Contextual Info: DS3101 Stratum 3/3E Timing Card IC www.maxim-ic.com FEATURES GENERAL DESCRIPTION When paired with an external TCXO or OCXO, the DS3101 is a highly integrated central timing and synchronization solution for SONET/SDH network elements. With 14 input clocks, the device directly

ACS8522

Abstract: 10mhz OCXO Digital Alarm Clock by ttl DS3102 DS3102GN GR-1244 GR-1244-CORE GR-253 GR-253-CORE
Contextual Info: 19-4617; Rev 5; 8/10 DS3102 Stratum 2/3E/3 Timing Card IC with Synchronous Ethernet Support General Description The DS3102 is a low-cost, feature-rich timing IC for telecom timing cards. With 8 input clocks, the device directly accepts both line timing from a large number of

2SB1625

Abstract: 2SD2494
Contextual Info: 7 0 Ω E 2SB1625 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) –110 VEBO IC ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –110min V –6 A hFE VCE=–4V, IC=–5A 5000min∗ IB –1