95TYP Search Results

2SD2141

Contextual Info: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)

Contextual Info: P—SDJ42—400—1.27A Uniti nn [0 5 1 . 2 CU 42 22 21 ro ro <£ n£ L_22 27. 72MAX 27. 3±0. 12 FTO • Ur\ is 0. 95TYP o, 4 3 ì 8:I IO] % lo . 1 7 « o, 69^8: AI8 Mar .2003

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

Contextual Info: Ordering information AC-DC Power Supplies Power Module type DPG DPG 750 1 2 1Series name 2Output power 500 : 500W ACIN 200V 750 : 750W (ACIN 200V) DPG MODEL DPG500 AC INPUT[V] AC85 - 264 AC170 - 264 AC85 - 264 AC170 - 264 500 500 750 MAX OUTPUT WATTAGE[W]

Contextual Info: Ordering information AC-DC Power Supplies Power Module type DPG DPG 750 1 2 1Series name 2Output power 500 : 500W ACIN 200V 750 : 750W (ACIN 200V) DPG MODEL DPG500 AC INPUT[V] AC85 - 264 AC170 - 264 AC85 - 264 AC170 - 264 500 500 750 MAX OUTPUT WATTAGE[W]

dc to ac 400 hz 100v inverter

Contextual Info: Ordering information AC-DC Power Supplies Power Module type DPF1000 DPF 1000 1 2 1Series name 2Output wattage R DPF MODEL AC INPUT[V] MAX OUTPUT WATTAGE[W] DC OUTPUT VOLTAGE[V] DPF1000 AC85 - 264 1,000 DC360 AC170 - 264 1,500 SPECIFICATIONS INPUT OUTPUT PROTECTION

Ac170

Abstract: DPF1000 12 to 220 1000w inverter power inverter 1500w pcb
Contextual Info: Power module type DPF1000 Ordering information DPF 1000 12 1Series name 2Output wattage R TRC Electronics, Inc. Authrozied Stocking Distributor Tel: 973.779.8282 Fax: 973.779.1490 Contact TRC for pricing, stock, and technical assistance. www.trcelectronics.com

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SD2390

Abstract: 2SB1560
Contextual Info: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max

led smd side view

Abstract: L 3055 smd HRM130S HRM130ST side LED smd
Contextual Info: •irD A TRANSCEIVER MODULE Stanley's O pto-wireless transceiver module is com patible with IrDA standard which includes all of the devices necessary for wireless transmission, such as infrared LED, PIN photodiode, driver, amplifier, and wave shape rectifier. And it is achieved in

2SB1259

Abstract: 2SD2081 FM20 12v dc to 6v dc
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

2SD2081

Abstract: 2SB1259 FM20 451a
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

led smd side view

Contextual Info: IrDA OPTO-WIRELESS TRANSCEIVER MODULE Ir D A ÎltS J ÏIS ti/n - .IU IrD A Infrared Data A ssociation , L f t , i ^ L E D , L E D K 5 - i / '\ P IN * h • Stanley's Opto-wireless transceiver module is compatible with IrDA standard which includes all o f the devices necessary for wireless transmission, such as

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

Contextual Info: Ordering information AC-DC Power Supplies Power Module type DPF1000 DPF 1000 1 2 1Series name 2Output wattage R DPF MODEL AC INPUT[V] MAX OUTPUT WATTAGE[W] DC OUTPUT VOLTAGE[V] DPF1000 AC85 - 264 1,000 DC360 AC170 - 264 1,500 SPECIFICATIONS INPUT OUTPUT PROTECTION

Contextual Info: I t D i i B N o. 8 4 -0 1 4 - 1 - 1 9 8 4 / Q CMOS 64 bit PROM RF/RP5H01 PIN CONFIGURATION Top view • G EN E R A L D ESC R IPT IO N R F 5 H 0 1 / R P 5 H 0 1 is a P R O M w ith 64 x lb it organization (+ dummy 8 bits), em ploying 2-layer silicon gate C M O S processing technology.

Yageo cfr-25

Abstract: metal film resistors mf0207 FM0207 yageo RSF CFR25s yageo ORDERING CODE rsf2ws SQM200 fmp-5 MF0207 SQP15A
Contextual Info: Metal Film Res Type [ MFR Series ] 4 Metal Film Res.-Precision Type [ MFP Series ] 6 Metal Film Res.-Professional Type [ MF0 Series ] 8 Metal Film Res.-Flame-Proof Type [ FMF Series ] 10 Metal Film Res.-Professional & Flame-Proof Type [ FM0 Series ] 12 Metal Film Res.-Power Flame-Proof Type [ FMP Series ]

Contextual Info: TOSHIBA TENTATIVE TC5164 5 405AJ/AFT/AJS/AFTS-40,-50 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16,777,216-WORD X4-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)405AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 16,777,216

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

c5287 equivalent transistor

Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels