2SA1725
Abstract: 2SC4511 FM20 2sa1725 transistor
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C
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2sa17252sc451110max80min+650min20typ150typ100msfm202sa1725 transistor
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2SC4466
Abstract: 2SA1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SA1908
Abstract: 2SC5100 DSA0016505
Contextual Info: 2SA1908 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5100 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
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2SA1725
Abstract: 2SC4511 FM20 DSA0016504
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C
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2SC4468
Abstract: 2SA1695 DSA0016510
Contextual Info: 2SC4468 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1695 10max µA V IEBO VEB=6V 10max µA V V(BR)CEO 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2sc44682sa1695mt-10010max+6140min50min20typ250typto100dsa0016510
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2SC5099
Abstract: 2SA1907 DSA0016511
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
Contextual Info: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2sc45112sa172510max80min+850min20typ110typto100to140transistor c-111fm20dsa0016510
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2SA1907
Abstract: 2SC5099
Contextual Info: 2SA1907 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5099 –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz
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2SA1907
Abstract: 2SC5099
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SA1908
Abstract: 2SC5100
Contextual Info: 2SA1908 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5100 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz
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2SC4466
Abstract: 2sa1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SD2141
Contextual Info: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)
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2SA1907
Abstract: 2SC5099 DSA0016504
Contextual Info: 2SA1907 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC5099 –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz
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30typ
Contextual Info: JXWBHP-MM93PG-40 0.5~18GHz Mixer Test report is for reference only. TEST REPORT for JXWBHP-MM93PG-40 Page 1 JXWBHP-MM93PG-40 0.5~18GHz Mixer Technical Specification 0.5-18 RF/LO GHz DC-150 IF(MHz) +7 LO Power(dBm) 8.0 Typ.,11.0 max Conversion Loss(dB) 12 min,20Typ.(0.5-1.0GHz)
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2SA1695
Abstract: 2SC4468 017t
Contextual Info: 2SA1695 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4468 –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ
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2sa16952sc4468mt-10010max+5140min50min20typ400typ017t
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208H
Abstract: RLXF0710
Contextual Info: 1. M echanical D im ensions: 2. Sch em atic: 3. E lectrical Specification s: Inductance: 150uH±10% 1KHz 0.1V Idc: 280mAdc J Du DC Resistance: 0.500 Ohms Max SRF: 3.5MHz Typ 3.0±.50 Q: 20Typ @796KHz Notes: 1. Solderability: Leads shall meet M IL-STD-202G,
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mil-std-202gul94v-0e151556150uh+5280madc20typ796khz208hrlxf0710
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2SA1695
Abstract: 2SC4468 DSA0016504
Contextual Info: 2SA1695 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4468 –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ
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2SC4511
Abstract: 2SA1725 FM20
Contextual Info: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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1S1585
Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80
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PBA150F-24
Abstract: PBA150F PBA150F-12 PBA150F-15 PBA150F-36 PBA150F-3R3 PBA150F-48 PBA150F-5 PBA150F-9 3R3 99
Contextual Info: Ordering information Unit type PBA150F PBA 150 1 2 F 3 -5 4 -O 5 1Series name 2 Output wattage 3 Universal input 4 Output voltage 5 Optional C :with Coating G :Low leakage current 0.15mA max / ACIN 240V E :Low leakage current and EMI class A (0.5mA max / ACIN 240V)
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pba150ful508pba150f-3r3pba150f-5+11pba150f-9pba150f-12part15cispr22-ben55011-ben55022-bpba150f-24pba150f-15pba150f-36pba150f-483r3 99
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LEP150F
Abstract: LEP150F-24 LEP150F-36 LEP150F-48 NAC-06-472 BVH-21T LEP150F36
Contextual Info: Ordering information Rugged PCB type LEP150F LEP 150 1 2 F 3 -24 4 Recommended Noise Filter NAC-06-472 R High voltage pulse noise type : NAP series Low leakage current type : NAM series *The Noise Filter is recommended *to connect with several devices. MODEL
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NAC-06-472
Contextual Info: Ordering information Unit type PAA100F PAA PAA 100 1 2 F 3 -5 5 Recommended Noise Filter NAC-06-472 R -O 4 High voltage pulse noise type : NAP series Low leakage current type : NAM series 1Series name 2Output wattage 3Universal input 4Output voltage 5Optional
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lca30s24
Abstract: LCA100S-5 LCA15S-5 LCA15S5 LCA30S-12 LCA-15 LCA-13 LCA75S-5
Contextual Info: Ordering information AC-DC Power Supplies Open Frame/Enclosed type LCA10S LC 1 A 2 10 3 S 4 Recommended EMI/EMC Filter NAC-06-472 R High voltage pulse noise type : NAP series Low leakage current type : NAM series -5 5 -O 6 1Series name 2100/120V input 3Output wattage
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lca10snac-06-472100/120vlca10s-5+14lca10s-5-hlca10s-12lca10s-15lca10s-2420mhzrm101lca30s24lca100s-5lca15s-5lca15s5lca30s-12lca-15lca-13lca75s-5
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VAA1012
Abstract: capacitor .22mf DC110 VAA505 VAA512 G156
Contextual Info: Ordering information On-board type VAA5 VAA 1 5 2 05 3 1Series name 2Output wattage 3Output voltage R MODEL MAX OUTPUT WATTAGE[W] DC OUTPUT VAA505 5.0 VOLTAGE[V] 5 CURRENT[A] 1.0 VAA512 5.4 12 0.45 SPECIFICATIONS INPUT OUTPUT VAA PROTECTION CIRCUIT ISOLATION
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