017T Search Results
017T Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 91753-017TRLF | Amphenol Communications Solutions | Minitek® 2.00mm, Board to Board, Unshrouded Vertical Header, Surface Mount, Double Row, 14 Positions, 2.00mm (0.079in) Pitch.. | |||
| 863001017TLF | Amphenol Communications Solutions | D-Sub Accessories, Input Output Connectors, Female Screw Lock. |
017T Price and Stock
Samtec Inc DW-10-17-T-S-260.100 Flex Stack Flexible Board Stacker .110 Tail |
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Samtec Inc HTSW-140-17-T-S |
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Samtec Inc HW-50-17-T-T-200-055.100 Flex Stack High-Temp Flexible Board Stacker Through-hole |
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HW-50-17-T-T-200-055 |
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HW-50-17-T-T-200-055 |
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Samtec Inc HLT-1017-T-R.100 Screw Machine Terminal Array |
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HLT-1017-T-R |
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HLT-1017-T-R |
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Samtec Inc HTSW-130-17-T-D.100 High-Temp Terminal Strip |
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HTSW-130-17-T-D |
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HTSW-130-17-T-D |
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017T Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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017t
Abstract: 4536-14-1
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OCR Scan |
400jiqq-b-626mil-m-14f017t+1 | |
SLD-12-6034-05T
Abstract: SLO-12-000-TB SLD-15-3030-15T SLS-24-072T SLS-05-030-1T SLS-24-012T 12-61818-12T1 SLS-12-068T 12 V SLS-24-048T
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sls-05-030-1tsls-05-060-1tsls-05-090-1tsls-05-120-1t+14 | |
TMS1070
Abstract: TMS 1070 TMS1000 IC TMS1000
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uu2942017tputooo00o0tms1070+3 | |
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Contextual Info: NUMBER:RD-SDRJLBG-017TC1 DATE :2006/09/25 -R REV:A1 Single 10/100/1000 BASE-TX Filtered Connector Module MODEL NO. : RJLBG-017TC1 Features: ◎ RoHS Compliant ◎ Fully shielded magnetics protect data from internally generated digital noise ◎ Reduces the overall length of the signal path for improved common mode performance |
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rd-sdrjlbg-017tc1rjlbg-017tc1ieee8021000base-tx+4 | |
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Contextual Info: 8x930HjrUNIVERSAL SERIAL BUS PERIPHERAL CONTROLLER 1.0 ABOUT THIS DOCUMENT 1.2 This data sheet contains advance information about Intel’s 8*930Hjr Universal Serial Bus hub peripheral controller, based on the MCS 251 peripheral controller, which includes a functional overview, |
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8x930hjruniversal930hjr8x930ax8x930hx+4 | |
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Contextual Info: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high |
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ts270mb82b75384-words300mil+4 | |
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Contextual Info: I I I I I I I I I I I I I I I I I I ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Plastic Path Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Operating Temperature Range • Full Military -55°C to +125°C • Industrial (-40°C to +85°C) |
OCR Scan |
act-ps512k8scd3764 | |
613 GB 123 CT
Abstract: MIPS Translation Lookaside Buffer TLB R3000 MIPS r3000 tag l9 225 400 tag d3 620 400 tag c3 625 800 burndy q5 tag R3000 Performance Semiconductor PR300
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r300032-bitpr3000mil-std-883c+11 | |
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Contextual Info: r a E L D M O iM r a Y PaceMips R3000 * 32-Bit, 25 MHz RISC GPU with Integrated Memory * Management Unit - Means Quality, Service and Speed 'SEMICONDUCTOR CORPORATION C1989 Performance Semiconductor Corporation jA TABLE OF CONTENTS Features and Description .6-5 |
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r300032-bitc1989pr3000+3 | |
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Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE M 51995P.FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995 is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply. This 1C can directly drive the MOS-FET w ith fast rise and |
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51995pm51995g17t1c | |
28F004S3
Abstract: 28F008S3 28F008SA 28F008SA-L 28F008SC 28F016S3 OFDM Block
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28f004s328f008s328f016s340-lead+7 | |
apic - s03Contextual Info: PENTIUM PROCESSOR WITH MMX TECHNOLOGY Maximum Operating Frequency iCOMP® Index 2.0 Rating 166 MHz 200 MHz 233 MHz 160 182 203 NOTE: Contact Intel Corporation for more information about iCOMP® Index 2.Q ratings. • Support for MMX™ Technology ■ Enhanced CMOS Silicon Technology |
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32-bit64-bitapic - s03 | |
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Contextual Info: PRODUCT PREVIEW in te l BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercialand Extended Temperature Specifications SmartVoltage Technology — Smart 3 Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP |
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28f004s328f008s328f016s340-lead+4 | |
Z86E3012PSC
Abstract: EPROM 2764a wv passat Z86E30 4FV diode IRC30
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17s7sz86e3028-pin8-b17l+8 | |
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Contextual Info: THIN FILM RESISTOR NETWORK SOM MEDIUM BODY GULL WING/ 14, 16, 18, AND 20 PIN • Increased lead density ■ Custom circuits available per factory « Model 4800T B Resistor Networks Electrical C haracteristics Resistance Range. 10 to 100K ohms Resistance Tolerance |
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4800t100ppm/50ppm/25ppm/ | |
FCE17
Abstract: TDA8751T A1GND tda8051 qpsk receiver
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tda805112-bitfce17tda8751t+2 | |
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Contextual Info: TOSHIBA TC55V2325FF-7 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V2325FF is a 2,097,152-bit synchronous pipelined burst static random access memory SRAM organized as 65,536 words by 32 bits. It is designed for use as a secondary cache to support microprocessor |
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tc55v2325ff-7536-word32-bittc55v2325ff+2 | |
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Contextual Info: TO SH IBA TC55V4316FF-167,-150,-133 TOSHI BA MOS DI GI TAL I NTEGRATED CI RCUI T SI LI CON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4316FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM |
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tc55v4316ff-167072-word32-bittc55v4316ff+2 | |
B33A10
Abstract: R6095 Q031 THOMSON-CSF PRODUCTS A24C11
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tspc860ts68en36032-bit46-91401orsa+5 | |
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Contextual Info: FLASH MEMORY CMOS 4M 5 1 2 K x 8 BIT MBM29F040A - 70/-90/-12 • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs |
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mbm29f040a32-pinc32021s-2mfpt-32p-m24+2 | |
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Contextual Info: irrigl, PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput |
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28f200bv-t/b28f200cv-t/b28f002bv-t/b28f002/400bx-+4 | |
82489dx
Abstract: AP-388 82489DX Corollary
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x100-x3ffx500-x7ffx900-xbffxd00-xfff+4 | |
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Contextual Info: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024 |
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2n60582n60592n63502n6351+1 | |
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Contextual Info: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation |
OCR Scan |
km616v513km616v513j-17130makm616v513j-20+6 | |