TS270 Search Results

Contextual Info: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high

Contextual Info: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static

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Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
Contextual Info: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

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Abstract: P15J BY126 BY127 1n5624g BY227
Contextual Info: :n l 07 iwstr/ power D ElI 30^0137 000233’=] 0 G P 1 5 S E R IE S „ T - 0 / -/S - ^ M IN IA TU R E G L A S S P A S S IV A T Ë D J U N C T IO N P L A S T IC R E C T I F IE R VOLTAGE RANGE 50 to 1000 Volts C U R R EN T 1.5 Amperes FEA TU R ES DO-15 • High temperature metallurgically bonded— no