30QMIL Search Results

W2464AK

Abstract: W2464AK-20 W2464AK-25 W2464A W2464 w2464aj-20 tda 3350
Contextual Info: MIS 1 5 1992 Winbond W2464A 8K X 8 HIGH SPEED CMOS STATIC RAH FEATURES DESCRIPTION • Low Power Consumption : Active : 400mW Typ. Standby : 25/zW(Typ.)- L-Version • Fast Access Time : 20/25 ns (Max.) • Single +5V Supply • Fully Static Operation •Direct TTL Compatible : All Inputs and

CY7C419

Abstract: IDT7200 IDT7201 IDT7202 IDT7203 1DT7 CY7C424-40DMB CY7C421-30AC cy7c421
Contextual Info: CY7C419/21/25/29/33 ’* CYPRESS Features 256x9,512x9, lK x9, 2Kx9, 4K x 9 C ascadable FIFO Functional Description • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write

Contextual Info: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static

C2104C

Contextual Info: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K