400JI Search Results

47-16l

Abstract: 74912 CS-8151T7 ltna
Contextual Info: 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP Description The CS-8151 is a precision 5V, 100mA m icro-power voltage regulator with very low quiescent current 400jiA. typical at 200jaA load . The 5V output is accurate w ithin ±2% and supplies

Contextual Info: CS8151 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP D escription The CS8151 is a precision 5V, 100mA m icro-power voltage regulator w ith very low quiescent current 400jiA typical at 200jiA load . The 5V output is accurate w ithin ±2% and supplies

emcp

Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, R! 02893 - Tel. 401-823-5200 * FAX 401-823-8723 • TWX 9102403454 EMC'Product "STS” Series Plating: -14: -4: -17: -52: 400ji" Tin term inal, 20Q|i" Cadmium Chromate base/eyelet

238-514

Abstract: 2721141
Contextual Info: Double - Turret Standoffs advanced . in t e r c o n n e c t io n s 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 • TWX 9102403454 EMCProduct "DTS" Series Plating; M j> K (O -14: 4QQuMTin term inal, 200u." Cadm ium C hrom ate base/eyeiet

Contextual Info: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)

Dense-Pac Microsystems

Contextual Info: COPIA D P Z 128W 16A 3 Dense-Pac Microsystems. Inc. q 128K X 16 FLASH EEPROM DENSE-STACK M ODULE PRELIM IN ARY DESCRIPTION: The D PZ128W 16A3 "DEN SE-STACK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable Leadless Chip

CE203

Contextual Info: □PM DPE8M656 Dense-Pac Microsystems. Inc. 16K X 16 CMOS EEPROM MODULE O DESCRIPTION: The D PE8M 656 is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPRO M module and may be organized as 16K X 16 or 32 K X 8. The module is built with four low-power C M O S 8K X 8 EEPROM s

27512-3

Abstract: EPROM AM27256 AM27512 AM27S12 am92256 27512 AM27256 150 Line Interactive ups with circuit diagram A15C IN3064
Contextual Info: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available

80C51

Abstract: 80C562 83C562 8XC562 S80C562-4A68 S83C562-4A68 ebft
Contextual Info: • 711062b ÜDbbSTG MfiS ■ P H I N Philips Semiconductors Microcontroller Products Product specification Single-chip 8-bit microcontroller 80C562/83C562 Single-chip 8-bit microcontroller with 8-bit A/D, capture/compare timer, high-speed outputs, PWM DESCRIPTION

LS221

Abstract: LS123 T54LS221D2
Contextual Info: 35 PRELIMINARY DATA DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT-TRIGGER INPUTS DESCRIPTION The T54LS/T74LS221 shows multivibrators featu­ ring a negative-transition-triggered input and a positive-transition-triggered input; both of them can be used as an inhibit input. Pulse triggering comes

Contextual Info: A N A LO G D E V IC E S □ Precision Low-Voltage Micropower Operational Amplifier FEATURES • • • • • • • • • Single/Dual Supply Operation .+1,6V to +36V +0.8V to +18V True Single-Supply Operation; Input and Output Voltage Ranges Include Ground

Contextual Info: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as

Contextual Info: XL93LC06A 256-Bit Serial Electrically Erasable PROM with 2V Read Capability PIN CONFIGURATIONS FEATURES • 4.5 to 5.5V Operation Plastic Dual-in-line "P" Package ■ Extended Temperature Range: -40°C to +85°C ■ State-of-the-Art Architecture — Nonvolatile data storage

LT 7217

Abstract: 7217a LC 7217 TA 7217 AP 7217 IC counter of icm 7217 7027a CD4011 oscillator 7 segment common anode car TACHOMETER
Contextual Info: rm h IC M 7 2 1 7 a r r is Ê S E M I C O N D U C T O R MWÊ # /f^m E Ë 4-Digit LED Display, Programmable Up/Down Counter August 1997 Features Description • Four Decade, Presettable Up-Down Counter with Parallel Zero Detect The ICM7217 is a four digit, presettable up/down counter with

910-B

Abstract: 6502MP STA02
Contextual Info: A N A LO G D E V IC E S |jiP-Compatible 10-Bit High-Speed A/D Converter ADC-910 FEATURES • • • • • • • • • Includes Clock, Reference, 3 -State Buffered Outputs Fast Conversion Time .6 / jls

Contextual Info: n $ î. SGS-THOMSON IMDIêœiLIKêraRilDIgi L6260 2.7 - 5.5V DISK DRIVER SPINDLE & VCM, POWER & CONTROL COMBO’S PRODUCT PREVIEW GENERAL • 5V AND 3V OPERATION. ‘ REGISTER BASED ARCHITECTURE . MINIMUM EXTERNAL COMPONENTS ■ SLEEP AND IDLE MODES FOR LOW

Contextual Info: SGS-THOMSON n»i Li TO K!ID®i M27V101 LOW VOLTAGE 1 Megabit (128K x 8 UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 15mA - Standby Current 20|*A ■ SMALL PACKAGES for SURFACE

Contextual Info: HI1106 HARRIS S E M I C O N D U C T O R Ê È È È È 8-Bit, 35 MSPS, High Speed D/A Converter TTL Input August 1997 Features Description • R eso lution .8-Bit The HI1106 is an 8-bit, 35MHz, high-speed D/A converter

Contextual Info: OKI semiconductor MSM6870-5 BASEBAND FILTER A N D MSK M O D E M LSI FOR CORDLESS TE GENERAL DESCRIPTION The MSM6870 is a comm unication LSI for CORDLESS TELEPHONE. The MSM6870 consists of a 1200 bps MSK M inimum shift keying modem and a baseband filters.

Contextual Info: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes

DS60037

Abstract: 28C64B-25 28C64B M/28C64B
Contextual Info: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation

DS11021

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V

1Ft 6PIN

Abstract: M5146 M51460FP M51460P
Contextual Info: MITSUBISHI ICs VCR M51460P/FP VIDEO PREAMPLIFIER DESCRIPTION The :o n s is tin g i PIN CONFIGURATION (TOP VIEW) M 5 1 4 6 0 P /F P of s e le c to r is tw o a s e m ic o n d u c to r b u ilt-in tw o - s ta g e in te g ra te d c ir c u it p re a m p lifie rs