DS11021 Search Results

RF3230

Contextual Info: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features         Applications    Battery Powered 3G

RFMX-2

Abstract: Emerson 142-0741-851
Contextual Info: RFMX2015 RFMX2015Differential IF Down-Converter 2300 MHz to 2700MHz DIFFERENTIAL IF DOWN-CONVERTER 2300MHZ TO 2700MHZ Features       IFN IFP GND NC 17 16 NC 1 15 NC RFIN 2 14 NC GND 3 13 GND GND 4 12 GND GND 5 11 LO 7 8 9 10 GND 6 NC Applications

Contextual Info: RFXF0573 RFXF05731:1 SMT Transformer 1:16 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 40MHz  Low Cost and RoHS Compliant  Flux Coupled  Industry Standard SMT package  Available in Tape-and -Reel  50Ω Characteristic Impedance

Contextual Info: RFRP2920 RFRP2920 5MHz to 100MHz Si REVERSE HYBRID 5MHz to 100MHz Si REVERSE HYBRID LOW CURRENT Package: SOT-115J +VB Features   Excellent Linearity Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise

RFSW2041D

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

3g UMTS signal Schematic Diagram

Contextual Info: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/

Contextual Info: RFXF0573 RFXF05731:1 SMT Transformer 1:16 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 40MHz  Low Cost and RoHS Compliant  Flux Coupled  Industry Standard SMT package  Available in Tape-and -Reel  50Ω Characteristic Impedance

Contextual Info: $ 27LV512 M ic r o c h ip 512K 64K x 8 Low-Voltage CMOS EPROM PACKAGE TYPE FEATURES • W ide voltage range 3.0V to 5.5V • High speed performance - 200 ns access tim e available at 3.0V • CMOS Technology fo r low pow er consum ption - 12 m A Active current at 3.0V

DS11021

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V

Contextual Info: 27LV512 M ic r o c h ip 512K 64K X8 Low Voltage CMOS EPROM PIN CONFIGURATIONS FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V

Contextual Info: RFGA2012 RFGA2012 InGaP HBT Low Power Linear Amplifier InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, 8-Pin, 2mmx2mm Features High OIP3=35dBm at 1960MHz VBIAS  Low DC Power: 3.3V, 23mA  Low NF = 1.6dB at 1960MHz 7 RFOUT/VCC  50MHz to 3000MHz Operation

Contextual Info: RFXF5553 RFXF55531:1 SMT Transformer 1:4 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 1200MHz  Low Cost and RoHS Compliant  Transmission Line  Industry Standard SMT package  Available in Tape-and -Reel  50Ω Characteristic Impedance

DS11021

Abstract: tce 1994
Contextual Info: 27LV512 M ic r o c h ip 512K 64K X 8 Low-Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance — 200ns access time available at 3.0V • CMOS Technology for low power consumption — 12mA Active current at 3.0V

RF3232

Abstract: HDR1X
Contextual Info: RF3232 RF3232QuadBand GSM/GPRS Transmit module with Two UMTS Ports QUAD-BAND GSM/GPRS TRANSMIT MODULE WITH TWO UMTS PORTS 3 GND 4 RFIN HB 5    Applications      For Single and Dual band 3G Applications GSM850/EGSM900/ DCS1800/PCS1900

E8363

Contextual Info: RFSW2042D RFSW2042D DC to 20GHz GaAs SP3T Switch DC TO 20GHz GaAs SP3T SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2042D is a reflective SP3T GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

resistor variable 50k

Contextual Info: RFPD2930 RFPD2930 45MHz to 1003MHZ GaAs/GaN PWR DBLR HYBRID 45MHZ to 1003MHZ GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Current setting +VB Features   Excellent Linearity Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability

A1933

Abstract: amplifier 50 50W
Contextual Info: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

Contextual Info: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features           20 W3 Bias and Power Control

Contextual Info: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE Features RFIN HB PowerStar Architecture  Proven  High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% GND GND RX1 RX2 RX3 GND 1 GND Package: Module, 6.63mmx5.24mmx1.00mm

Contextual Info: RFSW2044D RFSW2044D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2044D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

Contextual Info: & 27LV512 M icro ch ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance — 200ns maximum access time at 3.0V • CMOS Technology for low power consumption — 12mA Active current at 3.0V

SPB-2026Z

Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
Contextual Info: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated

RF3171TR13

Abstract: polar modulation
Contextual Info: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2           20 W3 Bias and Power Control VBATT 5 VCTL4 6 Switch

RF9802

Contextual Info: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE GND RX1 RX2 RX3 18 17 2 16 RX4 Proven PowerStar Architecture Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND GND 5 Integrated Power Flattening Circuit for Lower Power Variation