160MA Search Results

UM61M512K-15

Abstract: UM61M512K15 UM61M512 um61M512K UM61M512-20 um61m UM61M51
Contextual Info: UM61M512 Seríes 64KX 8, 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply * Access times: 15/20 ns max. ■ Current: Operating: 160mA (max.) Standby. 10mA (max.) ■ Full static operation, no clock or refreshing required ■ 3.3V I/O com patible

Contextual Info: AC Adapter 12VDC/800mA 412-112084 DIMENSIONS: in. except where noted 1.73 1.93 2.56 5.5mm 2.1mm .470 SPECIFICATIONS • Primary voltage: 120VAC 60Hz 19W • Exciting current, open circuit: 160mA max. • DC resistance ± 15%: 27Ω • Secondary, no load voltage: 17.7VDC

17VDC

Abstract: XC-600026
Contextual Info: AC Adapter 12VDC/200mA 412-112022 41.91 1.65 Dimensions: mm (in.) 43.18 (1.70) 58.42 (2.30) 2.5 (.098) 13.97 (.55) Electrical Specifications: • Primary voltage: 120VAC 60Hz • Exciting current, open Circuit: 160mA max. • DC resistance: ±15%, 57Ω • Secondary, no load voltage: 17VDC

PVD10

Abstract: PVD1052 PVD1054 PVD13N
Contextual Info: Replaced by PVD13N Data Sheet No. PD10023E Series PVD10 Microelectronic Power IC BOSFET Photovoltaic Relay Single-Pole, 160mA, 0-100V DC General Description The Photovoltaic DC Relay PVD is a single-pole, normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a

AP01L60AT

Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
Contextual Info: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to

KM681002

Contextual Info: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)

cerdip 300mil

Abstract: plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024
Contextual Info: HILIPS i n t e r n a t i o n a l Philips Samiconductors-SigneHcs Document No. 853-1157 ECN No. 97652 Date of issue September 15,1989 Status Product Specification FAST Products FEATURES • Ideal for driving transmission lines or backplanes. 160mA lQL Ideal for applications with imped­

5RT-040H

Abstract: 5RT-0500H 5RT-025H 5RT-032H 5RT-010H 5RT-0630H 5RT-0800H 5RT-020H FUSE T 3.15A H 250V 5RT-0100H
Contextual Info: m^ c t o 5RT , RoHS & Pb-free RADIAL LEAD MICRO FUSE TIME-LAG Unit: mm DIMENSIONS: Short 5,05*0.1 TAPING SPECIFICATIONS: mv MAX CATALOG AMPERE VOLTAGE NO. RATING DROP 5RT-0100H 100mA 350 5RT-0125H 125mA 300 5RT-0160H 160mA 280 5RT-0200H 200mA 260 5RT-0250H 250mA

Contextual Info: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)

GP160SCKT

Abstract: IEC61951-1 ZRS1042REV03
Contextual Info: Data Sheet Model No.: GP160SCKT Type : High Temperature Rechargeable Nickel Cadmium Cylindrical Cell Nominal Dimension with Sleeve : ∅ = 23.0 mm H = 43.0 mm : Recommended discharge current 160mA to 1600mA Application 1.4 1.2 Nominal Capacity Charging Condition

mj15030

Abstract: VB027BSP MJ-15030
Contextual Info: VB027BSP  HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027BSP Vcl 320V Icl 10.5A Id on 160mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT

Transformer ei35

Abstract: BP5086A20S NH3 fuse
Contextual Info: BP5086A20S AC/DC converter AC100V input, output-1：4V/1mAoutput-2：20V/160mA ●Dimension（Unit：mm） Limits Unit Vi Topr Tstg Tcmax Vsurge IoMAX 190 −20 ~ +80 −20 ∼ +105 105 2 160 V ℃ ℃ ℃ kV mApk 10.1MAX. 30.5MAX. Mark Side Symbol 17.9MAX.

smd marking YK

Abstract: 011V
Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : B 6 .3 D ± 0 .3 0 i 3. E l e c t r i c a l S p e c i f i c a t i o n s : OCL: 1000uhl±20% @10KHz 0.11V, 160mA DCR: 4 .9 O hm s ± 4 0 % SRF: 1.7MHz Min Notes:. M arking on to p view 2 .0 0

US015

Abstract: SOT-963 MOSFET NOTEBOOK us-015
Contextual Info: News Release Released – April 14, 2009 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Space Saving Dual, 20V, 160mA N-Channel MOSFET

Contextual Info: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)

Contextual Info: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002-15:170mA (Max.) KM681002 -17: 160mA (Max.)

Contextual Info: TEKTRONI X/ TRI ÖUINT 2SE D fliObSl 00GQ1G3 5 Product Summary_ O m Custom Foundry Products and Services GaAs Process Parameter 1D&1A HA QED QED/A D-Mode D Mode IDSSE -1.5V n/a 150mA n/a -1.6V n/a 160mA n/a D Mode EMode -0.60V 0.15V 60mA 40mA

CMRDM3575

Abstract: PB CMRDM3575 SOT-963
Contextual Info: Product Brief CMRDM3575 N-Channel and P-Channel Complementary MOSFETs in the SOT-963 SOT-963 Typical Electrical Characteristic The new dual complementary CMRDM3575 consists of a 20V, 160mA N-Channel MOSFET and a 20V, 140mA P-Channel MOSFET. Packaged in the ultra miniature SOT-963 surface

Contextual Info: Cell Type KR-SCH 1.6 Specifications 1600mAh Nominal Capacity 1.2V Nominal Voltage Charging Current D d H Dimensions of Bare Cell D d 42.0 ±0.3 1.654 ±0.012 22.0 ±0.3 0.866 ±0.012 10 0.394 mm inch mm inch mm inch 160mA Standard Charging Time H 53mA Trickle

3291G

Abstract: Scans-00127386
Contextual Info: UKU ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 3291G LED BACKLIGHT FOR LCD DISPLAY 160mA 10V -20 to +70°C -30 to +80°C IF VR Topr Tstg ELECTRO-OPTICAL CHARACTERISTICS Ta=25°C PARAMETER SYMBOL MIN TYP MAX UNIT

Contextual Info: 4-Channel LED Driver with Phase Shift Control and 10-Bit Dimming Resolution ISL97687 Features The ISL97687 is a PWM controlled LED driver that supports 4 channels of LED current, for Monitor and TV LCD backlight applications. It is capable of driving 160mA per channel from a

Capacitor 10u 10V 1206

Abstract: c3216x5r1e106m "LED Array" pnp 8 transistor array 2N3906 10uF CAPACITOR SS12 Schottky C3216X7R1A106M LM2698 transistor 2N3906 datasheet
Contextual Info: 6-21-05 Rev. 3 LM2698 8 x 4 LED Array Driver L1 33µH 0.75A Vin = 5V +-10% D1 VIN SW FSLCT NC 10µF 10V CIN SHDN Q2 Q3 Q4 Q5 Q6 Q7 Q8 CO 10µ F 25V LM2698 PWM IN Q1 GND FB Vc CC RC R1 R2 R3 R4 R5 R6 R7 R8 Theory of Operation This circuit consists of a power section optimized to deliver a total of 160mA to the LED array.

Contextual Info: ATTENTION HL-2012U57G24K22C1-12 GREEN OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features •500MMX11MM WATERPROOF SMD LIGHT RIBBON（24-LED）. •PRINTED CIRCUIT BOARD THICKNESS：0.2MM •WORKING VOLTAGE：12V DC. •WORKING CURRENT: 160MA.

M103

Abstract: M105
Contextual Info: S4S1R 2–4 1.3 1.6 70 100 1 Frequency Range min Insertion Loss (max) VSWR (max) Isolation (min) Switching speed (max) CW RF power, operating (max) NOTES: DC Bias: (Standard) +5V +/-0.5V @ 160mA max -15V +/-3V @ 50mA max DC Bias: (-5 option) +5V +/-0.5V @ 200mA max