TRANSISTOR WM 9
Abstract: BF749 UHF transistor GHz transistor wm
Contextual Info: Philjps_Semicondtgtore B l 711065b QObflbSfl 55^ HIN ^^Produc^pecification NPN 5 GHz wideband transistor FEA TU R ES BF749 e P IN N IN G PIN • High power gain • Low noise figure • Gold m etallization ensures excellent reliability. D E S C R IP T IO N
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bf749ot143msb035ot143r+3transistor wm 9uhf transistor ghztransistor wm
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2n4391
Abstract: 2N4393 2N4392 17Z6 IEC 439-3
Contextual Info: 711065b 00bô07M 5 0b • P H I N 2N4391 to 4393 N-CHANNEL FETS S ilico n sym m etrical n-channel d e p le tion typ e ju n c tio n fie ld -e ffe c t transistors in TO -18 m etal envelopes w ith th e gate connected to th e case. T he transistors are intended fo r lo w pow er, ch o p pe r o r sw itching,
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711005b2n4391711002b2n4392+32n439317z6iec 439-3
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BFR84
Abstract: bfr84 is bfr84 as mosfet depletion transistor bfr84
Contextual Info: 711065b DDb7b37 137 IPHIN BFR84 SILICON N-CHANNEL DUAL GATE MOS-FET D e p le tio n ty p e fie ld -e ffe ct tra n sisto r in a m etal T O -7 2 envelope w ith source and substrate connected to th e case, intended fo r a w id e range o f v.h.f. ap plications, such as v.h.f. te levisio n tuners, f.m . tuners,
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711065bddb7b37bfr84711002b+5v62-sbfr84 isbfr84 asmosfet depletiontransistor bfr84
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MPS3704
Abstract: MPS3706 MPS3705
Contextual Info: MPS3704 MPS3705 MPS3706 philips international 5bE D 711065b 0042406 4Ô4 • SILICON PLANAR EPITAXIAL TRANSISTORS PHIN T -Z 7 -Z / NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.
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mps3704mps3705mps3706711065b+1100ma
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BUK445-600B
Abstract: 100-P
Contextual Info: PHILIPS INTERNATIONAL b5E » B 711065b DDbMQll 7b3 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in
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34D SERIES CAPACITOR
Abstract: BLY92 BLY92C Philips MBB .J275
Contextual Info: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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d0b3b37bly92c/01ot122f1aot122f+7m3432611j1u34d series capacitorbly92bly92cphilips mbbj275
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IN916
Abstract: TDA8702 TDA8708A TDA8709A TDA8709AT
Contextual Info: IN TE G R A TE D C IR C U ITS h SlnllET TDA8709A Video analog input interface Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS 711065b 0073fe3fl 302 This Material C o p yrighted By Its Respect i v e Ma nu f a c t u r e r
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tda8709a711065b0073fe3fl7110fl2b+5d073bblin916tda8702tda8708atda8709at
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BUK543
Abstract: BUK543-100A BUK543-100B
Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor
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711065bbuk543-100a/b-sot186buk543+2buk543-100abuk543-100b
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BUK453-60A
Abstract: BUK453-60B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711065bbuk453-60a/bt0220abbuk453-60a+1buk453-60b
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sot172
Contextual Info: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures
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blv99/slot172-sot172dmdb012+27z94685sot172
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SMD IC 2025
Abstract: Y 09 PZTA92 PZTA93 bs7 smd
Contextual Info: 711065b ODbl'm 71D IPHIN P Z T A 92 PZTA 93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icro m in ia tu re S M D envelope S O T -2 2 3 . T h e y are p rim a rily intended fo r use in te lep h o n y and professional co m m un ication eq uip m ent.
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711065bpzta92pzta93ot-223+4mechanical00masmd ic 2025y 09bs7 smd
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silicon planar epitaxial transistors
Contextual Info: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA
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bcy70bcy71t-27-09711002b+1silicon planar epitaxial transistors
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BUK10B-50US
Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
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7110fl2bbuk106-50l7sbuk106-50lp/spbuk106-50l/s+7buk106-50i7sbuk10b-50usphilips ldhd6506buk106-50lbuk106-50sbuk106
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TDA1534
Abstract: SAMPLE HOLD AMPLIFIER single supply TDA1535 sample and hold TDA1535B
Contextual Info: Philips Semiconductors Integrated Circuits Preliminary specification _ TDA1535B High-speed single sampie-and-hold amplifier QUICK REFERENCE DATA GENERAL DESCRIPTION The TDA1535B is a high-speed sampte-and-hold amplifier with a total harmonic distortion of 0.001%,
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tda1535b-17v-100tda1534711002b+4c12easample hold amplifier single supplytda1535sample and hold
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MCL T1-1
Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Contextual Info: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM
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711002bg0114sspcf84c121pcf84c12+67110fl2bmcl t1-1mab8048pcf84c121ppcf84c121ts020
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-asmx0912b250yg04b34bt-33-+5711dfl2b004b3520qmb43iec134015 capacitor philips
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SAB 8048 P 220 SM 590
Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
Contextual Info: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for
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pcf84c633apcf84cxx16-bit7z24606+12711002b007412bsab 8048 p 220 sm 590maa 723made s18bmicro controller based cfl invertersoc 512ad74c4x16 lcd1514c8 lcd digit counters1bc
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BD235 PHILIPS
Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its
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bd233bd235bd237711002b+8asot-32bd234bd236bd238bd235 philipsbd233 tbd237 philipsbd237-10
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3843 application note
Abstract: HP2 800 243 PCF84C85P MAB8400 3M 4611 dpi 510 MAB8048 PCF84C85 PCF84C85T 8c032
Contextual Info: DEVELOPMENT DATA PCF84C85 This data sheet contains advance information and specifications are subject to change without notice. PHILIPS INTERNATIONAL - 34E D H 7110aab 0011415 4 B “T ^ - W - O S SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 32 I/O LINES D ESCRIPTIO N
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7110aab001141spcf84c85mab8048+1084cxxx12txtal3843 application notehp2 800 243pcf84c85pmab84003m 4611dpi 510pcf84c85t8c032
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BLY91
Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _
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711062b00b3bnbly91c/01lthasasot122f+5-sot122fmb8012bly91bh 1117 fsilicon epitaxial planar transistor philips
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circuit diagram of rc transmitter and receiver
Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS
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sc68c562circuit diagram of rc transmitter and receiverphilips e3philips ks capacitors+2sc68c562c1nscn68562
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3WD3
Abstract: 16KX8 16kx8 static ram ttl 80C51 80C52 87C524 P80C528FBP P83C524EBP
Contextual Info: SbE D PHILIPS IN TERNATIONAL • 711GfiEb CmafiflTS TTS H P H I N Product specification Philips Semiconductors Microcontroller Products 83C524/87C524 CMOS single-chip 8-bit microcontroller PIN CONFIGURATIONS DESCRIPTION The 8XC524 single-chip 8-bit microcontroller
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83c524/87c5248xc52480c5183c524+987c52416-bit48tclcl3wd316kx816kx8 static ram ttl80c52p80c528fbpp83c524ebp
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RZ3135B50W
Contextual Info: - 3 3 ^ 3 RZ3135B50W PHILIPS INTERN A T I O N A L SbE D • 711DaEt. OOHbLOS 124 * P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar e p ita xia l m icrow ave p o w e r tran sisto r, intended fo r use in a common-base class-C broadband pulse p ow er a m p lifie r w ith a freq u e n cy range o f 3.1 to 3.5 GHz.
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rz3135b50w711dflatt-33-13711002b+1004bb0b
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transistor D042
Abstract: b0338 b0332 transistor 338 D0420 b0334 bd33 transistor c 3331 BD333 BD335
Contextual Info: BD332; 334 BD336; 338 PHILIPS INTERNA TIO NA L SbE ]> 7110 02b 00W2a= t, l f l 4 * P H I N SILICON DARLINGTON POWER TRANSISTORS T -tt-S Î P-N-P e p itax ial base transistors in m o n o lith ic D arlin gton c irc u it fo r a u d io o u tp u t stages and general
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bd332bd336711002b0042a+13ot-82bd331bd333bd335bd337transistor d042b0338b0332transistor 338d0420b0334bd33transistor c 3331
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