3WD3
Abstract: 16KX8 16kx8 static ram ttl 80C51 80C52 87C524 P80C528FBP P83C524EBP
Contextual Info: SbE D PHILIPS IN TERNATIONAL • 711GfiEb CmafiflTS TTS H P H I N Product specification Philips Semiconductors Microcontroller Products 83C524/87C524 CMOS single-chip 8-bit microcontroller PIN CONFIGURATIONS DESCRIPTION The 8XC524 single-chip 8-bit microcontroller
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83C524/87C524
8XC524
80C51
80C51.
83C524
87C524)
16-bit
48tcLCL
3WD3
16KX8
16kx8 static ram ttl
80C52
87C524
P80C528FBP
P83C524EBP
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DT139
Abstract: DT139F M1632 BT139F M1628 gate control circuits for bt139 for heating applications
Contextual Info: PHILIPS INTERN A T I O N A L bSE T> m 7110âE?b OObSBlfi Tôt. B I PHI N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking
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BT139F
OT-186
BT139F-
OT-186
DT139
DT139F
M1632
M1628
gate control circuits for bt139 for heating applications
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SILICON DIFFUSED POWER TRANSISTOR
Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.
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BU705
OT93A
OT93A.
BU705
7Z810Ã
711GflEfa
77Mfib
SILICON DIFFUSED POWER TRANSISTOR
T200I
specification of curve tracer
bu705 philips semiconductor
700 v power transistor
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BUK427-600B
Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.
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BUK427-600
711Dfl2t.
D0411S0
-SOT199
BUK427-600B
18-SO
d0411
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EC900
Abstract: BLW99 2 TMT 15-4
Contextual Info: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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OT-121.
BLW99
711GflSb
EC900
BLW99
2 TMT 15-4
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K638
Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a
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BUK638-1000A/B
0G44744
BUK638
-1000A
-1000B
K638-1OOOA/B
711Gfi5b
04M74L
K638
transistor S52
DIODE 1000a
fet 1000A
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D 1991 AR
Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fl2ti
BD944;
O-220.
BD947
D 1991 AR
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as15 hf
Abstract: Philips euc 200 tcon8 AS15 f LH4N philips 80CE558 Arc Cri asa13 Philips euc 100 80C51
Contextual Info: Philip* Semiconductors Microcontroller Products • 711D flEb DDbb537 Single-chip 8-bit microcontroller G EN ER A L DESCRIPTION • 83CE558 — 32k bytes mask programmable ROM • • 80CE558 — ROMIess version of the 83CE558 89CE558 — 32k bytes FEEPROM
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7110fl2b
80CE558/83CE558/89CE558
8XCE558)
80C51
8XCE558
80C51.
83CE558
80CE558
as15 hf
Philips euc 200
tcon8
AS15 f
LH4N
philips 80CE558
Arc Cri
asa13
Philips euc 100
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