BUK638 Search Results

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

GI 312 diode

Abstract: sc1s3 K638 BUK638 BUK638-800A GDH473T
Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERN A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: BUK638-1000B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1k V(BR)GSS (V)30 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)3.5# @Temp (øC)100 IDM Max (@25øC Amb)22# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)220# Minimum Operating Temp (øC)

buk638-500

Abstract: buk638
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a iastic envelope. REDFET with fast recovery

K638

Abstract: idm 73
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

ht 25 transistor

Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

1e47

Abstract: BUK638-500B SI3090
Contextual Info: PHILIPS : Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode fiekJ-effect power transistor In a plastic envelope. F R E D F E T witn fast recovery reverse diode, particularly suitable for motor control applications, eg. in

BUK638-500B

Contextual Info: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
Contextual Info: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

buk638-500b

Contextual Info: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

d 434 mosfet

Abstract: T0220AB mosfet 345 T0-220AB mosfet MOSFET N BUK854-500IS 200B 100a mosfet MOSFET 606
Contextual Info: P hilip s S e m ico n d u cto rs Index PowerMOS Transistors including TOPFETs and IGBTs ¡PAGE | TYPE NUMBER |TECHNOLOGY ENVELOPE BUK100-50DL TOPFET T0220AB 24 BUK100-50GL TOPFET T0220AB 32 BUK100-50GS TOPFET T0220AB 41 BUK101-50DL TOPFET T0220AB 50 BUK101-50GL

BUK417-500B

Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
Contextual Info: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263