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2N6059 Datasheets (50)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N6059	Comset Semiconductors	Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	93.93KB	4
2N6059	Microsemi	NPN Darlington Power Silicon Transistor	Original	PDF	54.65KB	2
2N6059	Motorola	Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	658.11KB	6
2N6059	On Semiconductor	TRANS DARLINGTON NPN 100V 12A 3TO-204AA - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	127.13KB	8
2N6059	On Semiconductor	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	194.5KB	6
2N6059	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	11.79KB	1
2N6059	STMicroelectronics	TRANS DARLINGTON NPN 100V 12A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	42.47KB	4
2N6059	STMicroelectronics	SILICON NPN POWER DARLINGTON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF	64.95KB	4
2N6059	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	404.58KB	5
2N6059	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	197.93KB	4
2N6059	Central Semiconductor	Darlington Bipolar Transistor, NPN, 100V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	70.32KB	1
2N6059	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF	398.7KB	4
2N6059	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF	40.14KB	1
2N6059	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF	43.59KB	1

2N6059	General Electric	12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	170.65KB	4
2N6059	LAMBDA	Semiconductor Data Book V1 1988	Scan	PDF	184.7KB	6
2N6059	Mospec	POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	192.72KB	4
2N6059	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	310.97KB	7
2N6059	Motorola	European Master Selection Guide 1986	Scan	PDF	51.86KB	1
2N6059	Motorola	Power Transistor Selection Guide	Scan	PDF	325.11KB	6

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STMicroelectronics 2N6059 - Bag (Alt: 2N6059)
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Avnet Americas	2N6059	Bag			600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	2N6059		2,020			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	2N6059		1,604			1 $3.63 10 $3.63 100 $3.63 1000 $1.36 10000 $1.36	Buy Now
	2N6059		156			1 $4.07 10 $2.04 100 $1.76 1000 $1.76 10000 $1.76	Buy Now
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Avnet Americas	2N6059	Bulk		36 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
VPT Components JAN2N6059 - Bulk (Alt: JAN2N6059)
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VPT Components JANTX2N6059 - Bulk (Alt: JANTX2N6059)
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VPT Components JANTXV2N6059 - Bulk (Alt: JANTXV2N6059)
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2N6059 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6058 Abstract: 2N6059 Contextual Info: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear	Original	2n6058/2n6059 2n5883/2n5884 2n6058 2n6059 +1120ma	PDF
100 amp npn darlington power transistors Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052 Contextual Info: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	2n6050/d 2n6050 2n6052 2n6057 +112n6059 2n6051 2n6058 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2n6057 motorola 2n6059 motorola darlington complementary power amplifier npn 300 volts vce power transistor 1n5825 2n6051 motorola	PDF
2N6292 Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111 Contextual Info: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes	Original	2n6107/d 2n6057 2n6059 2n6050 +72n6107 2n6109 2n6111 2n6288 2n6292 motorola 2n6109 transistor 1n5825	PDF
2N 6058 Contextual Info: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)	OCR Scan	2n6050 2n6051 2n6052 2n6057 +42n6058 2n6059 12-ampere 2n 6058	PDF
500 watts audio amplifiers schematic diagram Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059 Contextual Info: 3875081 G E SOLID STATE 01 DE \| 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	17e3q 2n6050 2n6051 2n6052 +82n6057 2n6058 2n6059 12-ampere 500 watts audio amplifiers schematic diagram rca 2n6061 2n60s0 31715	PDF
Contextual Info: 2N6059+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750	Original	2n6059	PDF
2N6052 Contextual Info: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058	OCR Scan	2n6051 2n6052 2n6058 2n6059 +100q33d2	PDF
2N6059 Contextual Info: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r s ( P t c e t u e d l o o r s P b	Original	2n6059	PDF
Contextual Info: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency	OCR Scan	2n6050 2n6057 2n6051 2n6058 +22n6052 2n6059	PDF
Contextual Info: 2N6059 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 12 A Vce 1OO V Pd is s 15O W @ Te " 25 0C Tj -65 0C to &2OO 0C Ts t g -65 0C to &2OO 0C	OCR Scan	2n6059	PDF
2N6059 Abstract: 2n6059 03 transistor 1547 b Contextual Info: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ ■ STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL	Original	2n6059 2n6059 03 transistor 1547 b	PDF
2n6059 Abstract: 100 amp darlington transistors 2N6058 2n6052 Contextual Info: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA	Original	2n6052 2n6058 2n6059 100 amp darlington transistors	PDF
2N6059 JANTXV Abstract: 2N6059 Contextual Info: 2N6059 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6059 o204aa 31-jul-02 2n6059 jantxv	PDF
1N5825 Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA Contextual Info: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —	Original	2n6052/d 2n6052 2n6058 2n6059 +31n5825 msd6100 2n6058 motorola	PDF

Contextual Info: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL	OCR Scan	2n6059	PDF
RCA-2N6050 Abstract: n6050 2N60S Contextual Info: 3875081 6 E SOLID STATE Ql DE \| 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	17e3q 2n6050 2n6051 2n6052 +72n6057 2n6058 2n6059 12-ampere rca-2n6050 n6050 2n60s	PDF
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage	Original	2n6059 o-204aa	PDF
2N605 Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 Contextual Info: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc	Original	2n6050 2n6051 2n6052 2n6057 +72n6058 2n6059 80vdc 2n605 0s3224 2n6058 motorola ds3224	PDF
2N6050 Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S Contextual Info: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.	OCR Scan	2n6050 2n6057 2n6051 2n6058 +52n6052 2n6059 2n60s8 2n60 2n60s	PDF
BUX98PI Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490	Original	2n3055 2n3439 2n3440 2n3771 +162n3772 2n4923 2n5038 2n5153 2n5154 2n5191 bux98pi tip147t bu808dfi equivalent 2n3055 to-220 2n3055 to-218 package fluorescent ballast mje13007 tip3055 to-220 st1803dhi equivalent bu508afi equivalent bu808dfi	PDF
2N6220 Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 Contextual Info: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079	OCR Scan	2n6033 2n6047 2n6049 2n6049e +82n6050 750-12k 2n6051 2n6052 2n6220 2n6256 2n6258 pnp 2n60	PDF
Contextual Info: 2N6059+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750	Original	2n6059	PDF
2n6050 Abstract: 2n6057 2N6052 Contextual Info: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base	Original	2n6050 2n6051 2n6052 2n6057 +22n6058 2n6059	PDF
2N6050 Contextual Info: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon	OCR Scan	2n6050/51/52 2n6057/58/59 2n6050 2n6052 +32n6057 2n6059 2n6051	PDF

2N6059 Search Results

2N6059 Datasheets (50)

2N6059 Price and Stock

STMicroelectronics 2N6059

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2N6059 Datasheets Context Search

2N6058

100 amp npn darlington power transistors

2N6292

2N 6058

500 watts audio amplifiers schematic diagram

2N6052

2N6059

2N6059

2n6059

2N6059 JANTXV

1N5825

RCA-2N6050

2N605

2N6050

BUX98PI

2N6220

2n6050

2N6050