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2N605 Datasheets (391)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N605	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	72.71KB	1
2N605	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	95.71KB	1
2N605	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	110.87KB	1
2N605	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.25KB	1
2N605	Unknown	Vintage Transistor Datasheets	Scan	PDF	46.8KB	1
2N605	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.25KB	1
2N605	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.69KB	1
2N605	Unknown	GE Transistor Specifications	Scan	PDF	39.25KB	1
2N605	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	156.12KB	1
2N6050	Comset Semiconductors	Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF	93.93KB	4
2N6050	Motorola	Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF	658.11KB	6
2N6050	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF	10.98KB	1
2N6050	STMicroelectronics	N-Channel 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF	102.06KB	9
2N6050	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	404.58KB	5

2N6050	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	197.93KB	4
2N6050	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF	398.7KB	4
2N6050	Central Semiconductor	Darlington Bipolar Transistor, PNP, 60V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	70.32KB	1
2N6050	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF	40.14KB	1
2N6050	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF	43.59KB	1
2N6050	General Electric	12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	170.65KB	4

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Central Semiconductor Corp 2N6051 - Rail/Tube (Alt: 2N6051)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N6051	Tube	84		1	1 $3.06 10 $3.06 100 $3.06 1000 $3.06 10000 $3.06	Buy Now
VPT Components JANTX2N6058 - Bulk (Alt: JANTX2N6058)
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Avnet Americas	JANTX2N6058	Bulk			20	1 - 10 - 100 $67.74 1000 $65.63 10000 $65.63	Get Quote
TTI	JANTX2N6058	EDWF	33		1	1 $63.58 10 $63.58 100 $63.58 1000 $63.58 10000 $63.58	Buy Now
VPT Components JAN2N6058 - Bulk (Alt: JAN2N6058)
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Avnet Americas	JAN2N6058	Bulk			22	1 - 10 - 100 $70.69 1000 $69.97 10000 $69.97	Get Quote
TTI	JAN2N6058	EDWF			15	1 - 10 - 100 $71.40 1000 $71.40 10000 $71.40	Buy Now
VPT Components JANTXV2N6052 - Bulk (Alt: JANTXV2N6052)
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Avnet Americas	JANTXV2N6052	Bulk			16	1 - 10 - 100 $101.07 1000 $100.05 10000 $100.05	Get Quote
TTI	JANTXV2N6052	EDWF			10	1 - 10 $102.09 100 $102.09 1000 $102.09 10000 $102.09	Buy Now
Microchip Technology Inc JANTXV2N6050 - Bulk (Alt: JANTXV2N6050)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JANTXV2N6050	Bulk		50 Weeks	100	1 - 10 - 100 $96.11 1000 $88.72 10000 $87.59	Buy Now
Newark	JANTXV2N6050	Bulk			500	1 - 10 - 100 - 1000 $96.89 10000 $96.89	Buy Now
Microchip Technology Inc	JANTXV2N6050			50 Weeks		1 $96.89 10 $96.89 100 $96.89 1000 $96.89 10000 $96.89	Buy Now
Master Electronics	JANTXV2N6050					1 - 10 - 100 $88.61 1000 $88.61 10000 $88.61	Buy Now

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2N605 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6058 Abstract: 2N6059 Contextual Info: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear	Original	2n6058/2n6059 2n5883/2n5884 2n6058 2n6059 +1120ma	PDF
transistor 206 Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285 Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3	OCR Scan	2n6050 o-204aa 2n6051 2n6052 +122n6285 2n6286 2n6287 o-254aa 2n7371 t0-204aa transistor 206 2n7370 an-750 2n6057 2n6058 2n6059	PDF
2N6054 Abstract: 2N6053 2N6055 2N6056 Contextual Info: Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low	Original	2n6053 2n6054 2n6055 2n6056	PDF
2N6055 Abstract: 2N6056 2N6053 2N6054 Contextual Info: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low	Original	2n6055 2n6056 2n6053 2n6054	PDF
2N6057 Contextual Info: 2N6057 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6057 o204aa 31-jul-02	PDF
2N6055 Contextual Info: 2N6055 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6055 o204aa 31-jul-02	PDF
2N6056 Contextual Info: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6056 o204aa 31-jul-02	PDF
100 amp npn darlington power transistors Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052 Contextual Info: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	2n6050/d 2n6050 2n6052 2n6057 +112n6059 2n6051 2n6058 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2n6057 motorola 2n6059 motorola darlington complementary power amplifier npn 300 volts vce power transistor 1n5825 2n6051 motorola	PDF
2N6292 Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111 Contextual Info: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes	Original	2n6107/d 2n6057 2n6059 2n6050 +72n6107 2n6109 2n6111 2n6288 2n6292 motorola 2n6109 transistor 1n5825	PDF
2N6050 Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059 Contextual Info: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are	Original	2n6050 2n6051 2n6052 2n6057 +22n6058 2n6059	PDF
BU406O Abstract: 2N5876 bu409 Contextual Info: EPITAXIAL BASE TO-3 continued Vc»o (V ) V -1o lc (V ) (A ) <W) 1 0 0 /8 0 80 60 10 7 115 80 7 115 3 /2 35 0 .5 /4 35 0 .5 /4 60 10 150 20 80 80 150 2N 6053 2N 6054 60 80 60 80 10 8 100 20 750 8 100 2N 6050 60 60 12 2N6051 2N 6052 80 80 12 100 100 12 NPN	OCR Scan	2n5871 2n6051 t0-220 bu406o +22n5876 bu409	PDF
2n6053 Contextual Info: ductoi ^Pioducii, Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and	Original	2n6053/2n6055 2n6053 2n6055	PDF
2N6052 Abstract: 2N6051 1000C 100C JANTX 2N6052 Contextual Info: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	mil-prf-19500/501 2n6051 2n6052 1000c +3o-204aa 100c jantx 2n6052	PDF
2N6055 Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052 Contextual Info: Data Sheet Central Semiconductor Corp. 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of W orld Class Discrete Semiconductors	OCR Scan	2n6053 2n6054 2n6055 2n6056 +22n6055 transistor 2n6052	PDF

Contextual Info: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6051 o204aa 16-jul-02	PDF
Contextual Info: 2N6054 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6054 o204aa 16-jul-02	PDF
Contextual Info: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n6056 o204aa 16-jul-02	PDF
2N6055 MOTOROLA Abstract: 2N6055 2N6055 transistor 2N6056 Contextual Info: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.	OCR Scan	2n6055/d 2n6055 2n6056 n6056 +3o-204aa 2n6055 motorola 2n6055 transistor	PDF
2N 6058 Contextual Info: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)	OCR Scan	2n6050 2n6051 2n6052 2n6057 +42n6058 2n6059 12-ampere 2n 6058	PDF
500 watts audio amplifiers schematic diagram Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059 Contextual Info: 3875081 G E SOLID STATE 01 DE \| 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	17e3q 2n6050 2n6051 2n6052 +82n6057 2n6058 2n6059 12-ampere 500 watts audio amplifiers schematic diagram rca 2n6061 2n60s0 31715	PDF
2N6056 Abstract: 1N5825 MSD6100 Contextual Info: ON Semiconductort 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain —	Original	2n6056 r14525 2n6056/d 1n5825 +1msd6100	PDF
Contextual Info: 2N6058+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.750	Original	2n6058	PDF
Contextual Info: 2N6059+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750	Original	2n6059	PDF
2N6052 Contextual Info: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058	OCR Scan	2n6051 2n6052 2n6058 2n6059 +100q33d2	PDF

2N605 Search Results

2N605 Datasheets (391)

2N605 Price and Stock

Central Semiconductor Corp 2N6051

VPT Components JANTX2N6058

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Microchip Technology Inc JANTXV2N6050

2N605 Datasheets Context Search

2N6058

transistor 206

2N6054

2N6055

2N6057

2N6055

2N6056

100 amp npn darlington power transistors

2N6292

2N6050

BU406O

2n6053

2N6052

2N6055

2N6055 MOTOROLA

2N 6058

500 watts audio amplifiers schematic diagram

2N6056

2N6052