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    2N605 Search Results

    2N605 Datasheets (391)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N605
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 72.71KB 1
    2N605
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.71KB 1
    2N605
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 110.87KB 1
    2N605
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.25KB 1
    2N605
    Unknown Vintage Transistor Datasheets Scan PDF 46.8KB 1
    2N605
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.25KB 1
    2N605
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.69KB 1
    2N605
    Unknown GE Transistor Specifications Scan PDF 39.25KB 1
    2N605
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 156.12KB 1
    2N6050
    Comset Semiconductors Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF 93.93KB 4
    2N6050
    Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF 658.11KB 6
    2N6050
    Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF 10.98KB 1
    2N6050
    STMicroelectronics N-Channel 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF 102.06KB 9
    2N6050
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 404.58KB 5
    2N6050
    Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF 197.93KB 4
    2N6050
    Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF 398.7KB 4
    2N6050
    Central Semiconductor Darlington Bipolar Transistor, PNP, 60V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF 70.32KB 1
    2N6050
    Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF 40.14KB 1
    2N6050
    Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF 43.59KB 1
    2N6050
    General Electric 12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF 170.65KB 4
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    2N605 Price and Stock

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    Microchip Technology Inc JANTX2N6058

    TRANS NPN DARL 80V 12A TO-3
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    Microchip Technology Inc JANTX2N6058 224 36 Weeks
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    Microchip Technology Inc 2N6058

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc 2N6059

    PNP POWER TRANSISTOR SILICON AMP
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    STMicroelectronics 2N6059

    TRANS NPN DARL 100V 12A TO-3
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    Bristol Electronics () 2N6059 2,605
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    2N6059 15
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    onsemi 2N6052G

    TRANS PNP DARL 100V 12A TO204
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    Bristol Electronics 2N6052G 5 1
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    Quest Components 2N6052G 4
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    2N605 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6058

    Abstract: 2N6059
    Contextual Info: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear


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    2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059 PDF

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


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    2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059 PDF

    2N6054

    Abstract: 2N6053 2N6055 2N6056
    Contextual Info: Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low


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    2N6053 2N6054 2N6055 2N6056 2N6053 2N6054 2N6056 PDF

    2N6055

    Abstract: 2N6056 2N6053 2N6054
    Contextual Info: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


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    2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054 PDF

    2N6057

    Contextual Info: 2N6057 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6057 O204AA) 31-Jul-02 2N6057 PDF

    2N6055

    Contextual Info: 2N6055 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6055 O204AA) 31-Jul-02 2N6055 PDF

    2N6056

    Contextual Info: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6056 O204AA) 31-Jul-02 2N6056 PDF

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Contextual Info: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


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    2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052 PDF

    2N6292

    Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
    Contextual Info: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


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    2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111 PDF

    2N6050

    Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059
    Contextual Info: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are


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    2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057 PDF

    BU406O

    Abstract: 2N5876 bu409
    Contextual Info: EPITAXIAL BASE TO-3 continued Vc»o (V ) V -1o lc (V ) (A ) <W) 1 0 0 /8 0 80 60 10 7 115 80 7 115 3 /2 35 0 .5 /4 35 0 .5 /4 60 10 150 20 80 80 150 2N 6053 2N 6054 60 80 60 80 10 8 100 20 750 8 100 2N 6050 60 60 12 2N6051 2N 6052 80 80 12 100 100 12 NPN


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    2N5871 2N6051 T0-220 BU406O 2N5876 bu409 PDF

    2n6053

    Contextual Info: ductoi ^Pioducii, Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and


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    2N6053/2N6055 2N6053 2N6055 2N6053 PDF

    2N6052

    Abstract: 2N6051 1000C 100C JANTX 2N6052
    Contextual Info: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    MIL-PRF-19500/501 2N6051 2N6052 1000C O-204AA) 2N6052 2N6051 1000C 100C JANTX 2N6052 PDF

    2N6055

    Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052
    Contextual Info: Data Sheet Central Semiconductor Corp. 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of W orld Class Discrete Semiconductors


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    2N6053 2N6054 2N6055 2N6056 2N6053, 2N6055) 2N6054, 2N6056) 2N6055 transistor 2N6052 PDF

    Contextual Info: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6051 O204AA) 16-Jul-02 PDF

    Contextual Info: 2N6054 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6054 O204AA) 16-Jul-02 PDF

    Contextual Info: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6056 O204AA) 16-Jul-02 PDF

    2N6055 MOTOROLA

    Abstract: 2N6055 2N6055 transistor 2N6056
    Contextual Info: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.


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    2N6055/D 2N6055 2N6056 N6056* O-204AA 2N6055 MOTOROLA 2N6055 2N6055 transistor PDF

    2N 6058

    Contextual Info: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


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    2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058 PDF

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Contextual Info: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 PDF

    2N6056

    Abstract: 1N5825 MSD6100
    Contextual Info: ON Semiconductort 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain —


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    2N6056 r14525 2N6056/D 2N6056 1N5825 MSD6100 PDF

    Contextual Info: 2N6058+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.750


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    2N6058 PDF

    Contextual Info: 2N6059+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750


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    2N6059 PDF

    2N6052

    Contextual Info: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


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    2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052 PDF