2N7371 Search Results

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Devices 2N7371 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: 2N7371 Available on commercial versions PNP Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/623 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power PNP transistor is rated at 12 amps and is military qualified up to the JANTXV

2N7371

Contextual Info: TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices Qualified Level 2N7371 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N7371

Contextual Info: TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices Qualified Level 2N7371 JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N7371

Contextual Info: TECHNICAL DATA 2N7371 JANTX, JTXV Processed per MIL-PRF-19500/623 PNP HIGH-POWER DARLINGTON SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1

transistor 206

Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3

2N7371

Abstract: 2N6052 equivalent 2N7368 C-2688 c2688 L
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 17 August 2009. INCH-POUND MIL-PRF-19500/623C 17 May 2009 SUPERSEDING MIL-PRF-19500/623B 15 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER

Contextual Info: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80

2N6057A

Abstract: 2N6058A 2N6282 TO-204AA transistor transistor 206 2N7370 2N6050 2N6285
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR 2N6050 60 2N6051A hpE @ V VCE ^CE sat min/max @ A/V @ Ic/Iß V @ A/A C<p P (MHz) 12 750/18000@6/3 2.0@6/.024 500 4.0 80 12 750/18000@6/3 2.0@6/.024 500 4.0 2N6052A 100 12 750/18000@6/3 2.0@6/.024

transistor 206

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR P Ìt MHz 750/18000@6/3 2.0@6/.024 500 4.0 12 750/18000@6/3 2.0@6/.024 500 4.0 100 12 750/18000@6/3 2.0@6/.024 500 4.0 2N6285 60 20 750/18000@ 10/3 2.0@10/.04 600 4.0 2N6286 80 20 750/18000@ 10/3