2N6052 Search Results
2N6052 Datasheets (57)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N6052 | Central Semiconductor | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DARL PNP 100V 12A TO-3 | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Comset Semiconductors | Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Original | 93.93KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Microsemi | TRANS DARLINGTON PNP 100V 12A 3TO-3 - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Original | 54.63KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Motorola | Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Original | 658.11KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | On Semiconductor | 2N6052 - TRANSISTOR 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power | Original | 131.11KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | On Semiconductor | Darlington Complementary Silicon Power Transistors | Original | 149.48KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | On Semiconductor | Darlington Complementary Silicon Power Transistor | Original | 127.13KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Semelab | Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Original | 11.81KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Advanced Semiconductor | Silicon Transistor Selection Guide | Scan | 404.58KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Boca Semiconductor | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Scan | 197.93KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Central Semiconductor | Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Scan | 70.32KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Central Semiconductor | POWER DARLINGTON TRANSISTORS (METAL) | Scan | 398.7KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Crimson Semiconductor | EPITAXIAL BASE / PLANAR Transistors | Scan | 40.14KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 | Scan | 43.59KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | General Electric | 12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Scan | 170.65KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | LAMBDA | Semiconductor Data Book V1 1988 | Scan | 184.69KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Mospec | POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 | Scan | 192.72KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Motorola | The European Selection Data Book 1976 | Scan | 55.78KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Motorola | Power Transistor Selection Guide | Scan | 325.11KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6052 | Motorola | Motorola Semiconductor Data & Cross Reference Book | Scan | 310.97KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6052 Price and Stock
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JANTX2N6052 | Bulk | 32 Weeks, 1 Days | 20 |
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JANTX2N6052 | EDWF | 128 | 1 |
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VPT Components JANTXV2N6052- Bulk (Alt: JANTXV2N6052) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JANTXV2N6052 | Bulk | 16 |
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JANTXV2N6052 | EDWF | 10 |
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Microchip Technology Inc 2N6052- Bulk (Alt: 2N6052) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N6052 | Bulk | 100 |
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2N6052 | 17 |
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2N6052 | Bulk | 500 |
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2N6052 | 1,655 | 48 Weeks |
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2N6052 | 49 Weeks | 1 |
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Microchip Technology Inc JAN2N6052- Bulk (Alt: JAN2N6052) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JAN2N6052 | Bulk | 50 Weeks | 100 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JAN2N6052 | Bulk | 22 |
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JAN2N6052 | EDWF | 15 |
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2N6052 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
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OCR Scan |
2n6050o-204aa2n60512n6052+12 | |
100 amp npn darlington power transistors
Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
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2n6050/d2n60502n60522n6057+11 | |
2N6050
Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059
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2n60502n60512n60522n6057+2 | |
2N6052
Abstract: 2N6051 1000C 100C JANTX 2N6052
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mil-prf-19500/5012n60512n60521000c+3 | |
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Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3 |
OCR Scan |
2n60502n6051a2n6052ao-204aa+5 | |
2N 6058Contextual Info: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059) |
OCR Scan |
2n60502n60512n60522n6057+4 | |
500 watts audio amplifiers schematic diagram
Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
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OCR Scan |
17e3q2n60502n60512n6052+8 | |
2N6052Contextual Info: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058 |
OCR Scan |
2n60512n60522n60582n6059+1 | |
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Contextual Info: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency |
OCR Scan |
2n60502n60572n60512n6058+2 | |
2n6059
Abstract: 100 amp darlington transistors 2N6058 2n6052
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2n60522n60582n6059100 amp darlington transistors | |
1N5825
Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
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2n6052/d2n60522n60582n6059+3 | |
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Contextual Info: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi taxial base PNP transistors in monolithic Darlington |
OCR Scan |
2n6050/51/522n6057/58/592n60502n6051+4 | |
RCA-2N6050
Abstract: n6050 2N60S
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17e3q2n60502n60512n6052+7 | |
transistor 8026
Abstract: pnp 150w darlington transistor to3 package
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2n6052o-204aatransistor 8026pnp 150w darlington transistor to3 package | |
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2N6050
Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
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2n60502n60572n60512n6058+5 | |
2N6220
Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
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OCR Scan |
2n60332n60472n60492n6049e+8 | |
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Contextual Info: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc |
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2n60522n6052/d | |
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Contextual Info: 2N6052+JANTX Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750 |
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2n6052 | |
2n6050
Abstract: 2n6057 2N6052
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2n60502n60512n60522n6057+2 | |
2N6050Contextual Info: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon |
OCR Scan |
2n6050/51/522n6057/58/592n60502n6052+3 | |
2N6052Contextual Info: 2N6052 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) |
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2n6052o204aa31-jul-02 | |
2N6052G
Abstract: 1N5825 2N6052 2N6059 MSD6100 npn transistor TO-3 5 amp 140 volts
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2n6052o-204aa2n6052g1n5825+3 | |
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Contextual Info: 2N6052 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc -100 V ce 150 W @ T C= 2 5 °C P diss -65 °C to +200 °C |
OCR Scan |
2n6052 | |
2N6059
Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
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OCR Scan |
2n60512n60522n60582n6059+2 | |