| 2N2219AL |  | Microsemi | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 | Original | PDF |  | 4 | 
| 2N2219AL |  | Microsemi | BJT, NPN, Switching Transistor, VCB0 75V, IC 0.8A - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | Original | PDF | 58.42KB | 2 | 
| 2N2219AL |  | Semelab | Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | Original | PDF | 10.7KB | 1 | 
| 2N2219AL |  | Semico | Chip: geometry 0400 polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | Original | PDF | 28.65KB | 1 | 
| 2N2219AL |  | Semico | Type 2N2219AL Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | Original | PDF | 43.87KB | 2 | 
| 2N2219ALJ |  | Semico | Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 | Original | PDF | 203.4KB | 2 | 
| 2N2219ALJAN |  | New England Semiconductor | BJT, NPN, Switching Transistor, IC 0.8A | Original | PDF | 30.32KB | 2 | 
| 2N2219ALJAN |  | New England Semiconductor | NPN SWITCHING SILICON TRANSISTOR | Original | PDF | 58.42KB | 2 | 
| 2N2219ALJANS |  | New England Semiconductor | BJT, NPN, Switching Transistor, IC 0.8A | Original | PDF | 30.32KB | 2 | 
| 2N2219ALJANS |  | New England Semiconductor | NPN SWITCHING SILICON TRANSISTOR | Original | PDF | 58.42KB | 2 | 
| 2N2219ALJANTX |  | New England Semiconductor | NPN SWITCHING SILICON TRANSISTOR | Original | PDF | 58.42KB | 2 | 
| 2N2219ALJANTXV |  | New England Semiconductor | NPN SWITCHING SILICON TRANSISTOR | Original | PDF | 58.42KB | 2 | 
| 2N2219ALJS |  | Semico | Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 | Original | PDF | 203.4KB | 2 | 
| 2N2219ALJTX |  | New England Semiconductor | BJT, NPN, Switching Transistor, IC 0.8A | Original | PDF | 30.32KB | 2 | 
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| 2N2219ALJTXV |  | New England Semiconductor | BJT, NPN, Switching Transistor, IC 0.8A | Original | PDF | 30.32KB | 2 | 
| 2N2219ALJX |  | Semico | Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 | Original | PDF | 203.4KB | 2 |