2SD25 Search Results

2sd2581

Abstract: 2SD2581 equivalent NPN Transistor 8A NPN Transistor 1500V Horizontal Deflection Switching Transistors horizontal transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

2SB1647

Abstract: 2SD2560
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SD2531

Contextual Info: TOSHIBA 2SD2531 2SD2531 T O SH IBA TRANSISTO R PO W ER AM PLIFIER APPLICATIO NS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm r Low Collector Saturation Voltage : VCE = 0.5V Typ. (IC = 2.5A, IB = 0.25A) High Power Dissipation : Pc = 25W(Tc = 25°C) ( s a t )

2SD2539 equivalent

Abstract: 2SD2539
Contextual Info: Inchange Semiconductor Product Specification 2SD2539 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for color TV PINNING

2SD2560

Abstract: 2SB1647 pnp 10A 12v 10a regulator ic
Contextual Info: Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

d2536

Abstract: 2SD2536
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

2SD2525

Abstract: 2SD252
Contextual Info: TO SH IBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 10 ± 0.2 • • High DC Current Gain : 100 Min. Low Saturation Voltage I 01.2 ,x — 1 f t V n V T o v Ï íTam — o a T t ì - ì I O A ì

2-16E3A

Abstract: 2SD2551
Contextual Info: 2SD2551 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2551 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage Unit: mm : VCBO = 1700 V Low Saturation Voltage : VCE sat = 5.0 V (Max.) High Speed : tf = 1.0 µs (Max.) Bult-in Damper Type

2sd2580

Contextual Info: SavantIC Semiconductor Product Specification 2SD2580 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING

Contextual Info: 2SD2531 TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm 03.2 ± 0.2 10 ± 0-3 Low Collector Saturation Voltage : VCE sat = 0-5V (Typ.) (IC = 2.5A, IB = 0.25A) High Power Dissipation : P q = 25W (Tc = 25°C)

Contextual Info: TOSHIBA 2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 H ORIZONTAL DEFLECTION OUTPUT FOR COLO R TV High Voltage V C B 0 = 1500 V Low Saturation Voltage VCE sat = 8V(Max.) tf = 0.5 jus (Typ.) High Speed Bulkin Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.

Contextual Info: TOSHIBA 2SD2551 2SD2551 TO SH IB A TRANSISTO R SILICON NPN TRIPLE DIFFUSED M E S A TYPE Unit in mm H O RIZO N TA L DEFLECTION OUTPUT FOR CO LO R TV .15.5 ±0.5 High Voltage VCBO = 1700 V Low Saturation Voltage v CE sat = 5.0 V (Max.) t = 1.0 /us (Max.) High Speed

Contextual Info: TOSHIBA 2SD2500 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V c b O - 1500 V Low Saturation Voltage : V qe sat = 3 V (Max.) High Speed : tf = 0.35 /us (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

Contextual Info: TOSHIBA 2SD2550 2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV .15.5 ±0.5 0 3 .6 ± O .3 3.010.3 High Voltage VCBO = 1700 V Low Saturation Voltage v CE sat = 5.0 V (Max) tf = 0.6 /us (Max)

2SD2599 equivalent

Abstract: IC 0829
Contextual Info: 2SD2599 TO SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage VCBO = 1500V Low Saturation Voltage VCE sat = 8V (Max) tf=0.5/¿s (Typ.) High Speed Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.

Hitachi DSA001650

Contextual Info: 2SD2592L, 2SD2592S Silicon NPN Triple Diffused Low Frequency Amplifier 1st. Edition December 1997 Target Specification Features • High voltage : V BR CEO = 300V min. Outline DPAK 4 4 1 2 1 2 3 3 1. Base 2. Collector 3. Emitter 4. Collector 2SD2592L, 2SD2592S

2SD2573

Contextual Info: Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 90˚ 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage

D1062

Abstract: 2SD2583 C10535E C10943X MEI-1202
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 30 V 30 V

2SD2589

Contextual Info: 7 0Ω E 2SB1659 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Conditions Ratings Unit V ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A

2-16E3A

Abstract: 2SD2550
Contextual Info: 2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage Unit: mm : VCBO = 1700 V l Low Saturation Voltage : VCE sat = 5.0 V (Max.) l High Speed : tf = 0.6 µs (Max.) l Bult-in Damper Type

2SD2559 equivalent

Abstract: 2-16E3A 2sd2559 2SD2559 Transistor Horizontal
Contextual Info: TO SH IBA 2SD2559 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2559 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV 15.5 ± 0.5 High Voltage : V^ b q - 1500 V Low Saturation Voltage : V qe sa^ = 5 V (Max.) Built-in Damper Type

2SD2536

Contextual Info: TO SHIBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm 5.1 M AX. SWITCHING APPLICATIONS. • High DC Current Gain : hjrE = 2000 Min. (V£ e = 2V, Ic = 1A) • Low Saturation Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2583 TRANSISTOR NPN TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit: mm 0.85±0.1 1.0±0.1 0.8 C • Absolute Maximum Ratings Ta = 25°C